VTB Process Photodiodes VTB1112, 1113 PACKAGE DIMENSIONS inch (mm) CASE 19 TO-46 LENSED HERMETIC CHIP ACTIVE AREA: .0025 in2 (1.60 mm2) PRODUCT DESCRIPTION Small area planar silicon photodiode in a lensed, dual lead TO-46 package. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. ABSOLUTE MAXIMUM RATINGS Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB1112 SYMBOL ISC TC ISC VOC TC VOC ID RSH TC RSH CHARACTERISTIC Short Circuit Current VTB1113 TEST CONDITIONS UNITS H = 100 fc, 2850 K Min. Typ. 30 60 ISC Temperature Coefficient 2850 K .12 Open Circuit Voltage H = 100 fc, 2850 K 490 VOC Temperature Coefficient 2850 K -2.0 Dark Current H = 0, VR = 2.0 V Max. Min. Typ. 30 60 .23 Max. µA .12 .23 490 %/°C mV -2.0 mV/°C 100 20 pA Shunt Resistance H = 0, V = 10 mV .25 7.0 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 -8.0 %/°C CJ Junction Capacitance H = 0, V = 0 .31 .31 nF SR Sensitivity 365 nm .19 .19 A/W λrange Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP Noise Equivalent Power D* 320 1100 320 920 2 40 ±15 Specific Detectivity 2 nm nm 40 V ±15 Degrees 3.0 x 10-14 (Typ.) 5.9 x 10-15 (Typ.) W ⁄ Hz 12 (Typ.) 2.1 x 10 13 (Typ.) cm Hz / W 4.2 x 10 PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA 1100 920 Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 26