VTB Process Photodiodes VTB5051B PACKAGE DIMENSIONS inch (mm) CASE 14 TO-5 HERMETIC CHIP ACTIVE AREA: .023 in2 (14.8 mm2) PRODUCT DESCRIPTION ABSOLUTE MAXIMUM RATINGS Planar silicon photodiode in a “flat” window, dual lead TO-5 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response. Storage Temperature: Operating Temperature: -40°C to 110°C -40°C to 110°C ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pages 21-22) VTB5051B SYMBOL CHARACTERISTIC TEST CONDITIONS UNITS Min. ISC TC ISC VOC TC VOC ID RSH TC RSH CJ H = 100 fc, 2850 K ISC Temperature Coefficient 2850 K Open Circuit Voltage H = 100 fc, 2850 K 420 mV VOC Temperature Coefficient 2850 K -2.0 mV/°C Dark Current H = 0, VR = 2.0 V Shunt Resistance H = 0, V = 10 mV .56 GΩ RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C Junction Capacitance H = 0, V = 0 3.0 nF Spectral Application Range λp Spectral Response - Peak VBR Breakdown Voltage θ1/2 Angular Resp. - 50% Resp. Pt. NEP D* Max. Short Circuit Current λrange 8 Typ. 13 .02 µA .08 250 330 2 720 pA nm 580 nm 40 V ±50 Degrees -14 (Typ.) Noise Equivalent Power 3.7 x 10 Specific Detectivity 1.0 x 1013 (Typ.) PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA %/°C W ⁄ Hz cm Hz / W Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto 30