PERKINELMER VTE1063

GaAlAs Infrared Emitting Diodes
VTE1063
TO-46 Flat Window Package — 880 nm
PACKAGE DIMENSIONS inch (mm)
CASE 24 TO-46 HERMETIC (Flat Window)
CHIP SIZE: .018" x .018"
DESCRIPTION
This wide beam angle TO-46 hermetic emitter contains a large area, double
wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher
current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
Maximum Reverse Voltage:
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
-55°C to 125°C
200 mW
2.11 mW/°C
100 mA
1.05 mA/°C
3A
-.8%/°C
5.0V
10 µA
880 nm
35 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output
Irradiance
Part Number
Ee
Half Power Beam
Angle
Radiant
Intensity
Total Power
Test
Current
VF
Ie
PO
IFT
@ IFT
Volts
Typ.
Max.
2.8
3.5
Condition
mW/cm2
VTE1063
Forward Drop
distance
Diameter
mW/sr
mW
Min.
Typ.
mm
mm
Min.
Typ.
mA
(Pulsed)
3.8
5.0
36
6.4
49
80
1.0
θ1/2
Typ.
±35°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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