PERKINELMER VTE1295

GaAlAs Infrared Emitting Diodes
VTE1295
T-1¾ (5 mm) Bullet Package — 880 nm
PACKAGE DIMENSIONS inch (mm)
CASE 62 T-1¾ (5 mm) BULLET
CHIP SIZE: .015" x .015"
DESCRIPTION
This 5 mm diameter, custom lensed device contains a medium area, single wirebonded, GaAlAs, 880 nm high efficiency IRED chip.
The custom lens allows this cost effective device to have a very narrow half power beam emission of ±8°. This device is a UL
recognized component for smoke alarm applications (UL file #S3506).
ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted)
Maximum Temperatures
Storage and Operating:
Continuous Power Dissipation:
Derate above 30°C:
Maximum Continuous Current:
Derate above 30°C:
Peak Forward Current, 10 µs, 100 pps:
Temp. Coefficient of Power Output (Typ.):
Maximum Reverse Voltage:
Maximum Reverse Current @ VR = 5V:
Peak Wavelength (Typical):
Junction Capacitance @ 0V, 1 MHz (Typ.):
Response Time @ IF = 20 mA
Rise: 1.0 µs Fall: 1.0 µs
Lead Soldering Temperature:
(1.6 mm from case, 5 seconds max.)
-40°C to 100°C
200 mW
2.86 mW/°C
100 mA
1.43 mA/°C
2.5 A
-.8%/°C
5.0V
10 µA
880 nm
23 pF
260°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also GaAlAs curves, pages 108-110)
Output
Irradiance
Part Number
Ee
Condition
mW/cm2
VTE1295
Forward Drop
Half Power Beam
Angle
Total Power
Test
Current
VF
Ie
PO
IFT
@ IFT
Volts
Typ.
Max.
1.5
2.0
Radiant
Intensity
distance
Diameter
mW/sr
mW
Min.
Typ.
mm
mm
Min.
Typ.
mA
(Pulsed)
3.0
5.5
36
6.4
39
20
100
θ1/2
Typ.
±8°
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA
Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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