polyfet rf devices SM341 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 150.0 Watts Single Ended Package Style AM TM "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation Junction to Case Thermal Resistance 300 Watts o 0.55 C/W Maximum Junction Temperature o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C Drain to Gate Voltage 15.0 A 125 V Drain to Source Voltage Gate to Source Voltage 125 V 20 V RF CHARACTERISTICS ( 150.0 WATTS OUTPUT ) SYMBOL Gps η VSWR PARAMETER MIN Common Source Power Gain TYP MAX 13 Drain Efficiency 65 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz % Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz Relative Idq = 0.80 A, Vds = 50.0 V, F = 175 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS Bvdss Drain Breakdown Voltage 125 Idss Zero Bias Drain Current 5.0 mA Vds = 50.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 7 V Ids = 0.30 A, Vgs = Vds gM Forward Transconductance Rdson Saturation Resistance Idsat V 1 TEST CONDITIONS Ids = 40.00 mA, Vgs = 0V 5.5 Mho Vds = 10V, Vgs = 5V 0.30 Ohm Vgs = 20V, Ids = 6.00 A Saturation Current 35.00 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 400.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 15.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 200.0 pF Vds = 50.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 07/11/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SM341 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE SM341 Freq=175 Mhz; Idq=.5A, Vds=50Vdc S3E 1 DIE CAPACITANCE 1000 240 14.0 Ciss 13.5 200 Linear @ 120W 160 13.0 P1dB = 200W Pout Coss 12.5 120 12.0 100 Gain 11.5 80 11.0 Efficiency = 55% 40 Crss 10.5 0 10.0 0 5 10 15 10 20 0 10 20 IV CURVE 40 50 ID & GM VS VGS S3E 1 DIE IV S3E 1 DIE ID & GM Vs VG 100.00 Id Id in amps; Gm in mhos 35 30 25 ID IN AMPS 30 VDS IN VOLTS Pin in Watts 10.00 20 15 gM 1.00 10 5 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS Vg=6v vg=8v 16 18 0 20 vg=12v 0 2 Zin Zout 4 6 8 10 Vgs in Volts 12 14 16 18 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 07/11/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com