polyfet rf devices SH703 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 130.0 Watts Push - Pull Package Style AH "Polyfet"TM process HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT features low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency. o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 270 Watts Junction to Case Thermal Resistance Maximum Junction Temperature o 0.65 C/W o 200 C DC Drain Current Storage Temperature o o -65 C to 150 C 16.0 A Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage 70 V 70 V 20 V RF CHARACTERISTICS ( 130.0 WATTS OUTPUT ) SYMBOL PARAMETER MIN Gps Common Source Power Gain η Drain Efficiency VSWR TYP MAX 10 55 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz % Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz Relative Idq = 1.20 A, Vds = 28.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS V Bvdss Drain Breakdown Voltage Idss Zero Bias Drain Current 3.0 mA Vds = 28.0 V, Vgs = 0V Igss Gate Leakage Current 1 uA Vds = 0V Vgs = 30V Vgs Gate Bias for Drain Current 5 V gM Forward Transconductance 65 2 Ids = 60.00 mA, Vgs = 0V Ids = 0.30 A, Vgs = Vds 3.6 Mho Vds = 10V, Vgs = 5V 0.35 Ohm Vgs = 20V, Ids = 7.50 A Vgs = 20V, Vds = 10V Rdson Saturation Resistance Idsat Saturation Current 21.00 Amp Ciss Common Source Input Capacitance 150.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 9.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 96.0 pF Vds = 28.0 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com SH703 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE S H 7 0 3 POU T V S PI N F re q=4 0 0 M H z, V D S =2 8 V , I dq=.6 A S1A 3 DICE CAPACITANCE 1000 12.50 12.00 140 11.50 Pout 120 11.00 100 10.50 80 10.00 60 Efficiency = 50% 40 9.50 Gain 9.00 20 Coss CAPACITANCE IN PFS 160 100 Ciss 10 Crss 8.50 0 1 8.00 0 5 10 15 P IN IN W A T T S 20 0 25 4 8 12 16 20 24 28 VDS IN VOLTS IV CURVE ID & GM VS VGS S1A 3 DIE IV S1A 3 DIE ID & GM Vs VG 100.00 Id in amps; Gm in mhos 25 ID IN AMPS 20 15 10 5 Id 10.00 1.00 gM 0.10 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 14 VDS IN VOLTS vg=8v Vg=6v 16 0 18 20 0 2 vg=12v Zin Zout 4 6 8 10 12 Vgs in Volts 14 16 18 20 PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 POLYFET RF DEVICES .XXX +/-.005 inches REVISION 10/01/2007 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com