TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 TM POW-R-PAK 150A / 1200V H-Bridge IGBT Assembly Description: TM The Powerex POW-R-PAK is a configurable IGBT based power assembly that may be used as a converter, chopper, half or full bridge, or three phase inverter for motor control, power supply, UPS or other power conversion applications. The power assembly is mounted on a forced aircooled heatsink and features state-of-the-art Powerex F-series trench gate IGBTs with low conduction and switching losses for high efficiency operation. The TM POW-R-PAK includes a low inductance laminated bus structure, optically isolated gate drive interfaces, isolated gate drive power supplies, and a DC-link capacitor bank. The control board provides a simple user interface along with built-in protection features including overvoltage, undervoltage lockout, overcurrent, overtemperature, and short circuit detection. Depending on application characteristics the TM POW-R-PAK is suitable for operation with DC bus voltages up to 800VDC and switching frequencies above 20kHz. Schematic PP150B120(-) Features: High performance IGBT inverter bridge Integrated gate drive with fault monitoring & protection System status / troubleshooting LEDs to verify or monitor proper operation Isolated gate drive power supplies Low inductance laminated bus Output current measurement & feedback Superior short circuit detection & shoot through prevention -1- PP150B120 TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TM POW-R-PAK 150A / 1200V H-Bridge IGBT Assembly Absolute Maximum Ratings, Tj = 25°C unless otherwise specified General Symbol IGBT Junction Temperature Units Tj -40 to +150 °C Tstg -40 to +125 °C Operating Temperature Top -25 to +85 °C Voltage Applied to DC terminals VCC 800 Volts Isolation Voltage, AC 1 minute, 60Hz sinusoidal Viso 2500 Volts Collector Current (TC = 25°C) IC 150 Amperes Peak Collector Current (Tj < 150°C) ICM 300 Amperes Emitter Current IE 150 Amperes Peak Emitter Current IEM 300 Amperes Maximum Collector Dissipation (Tj < 150°C) Pc 520 Watts Unregulated +24V Power Supply 30 Volts Regulated +15V Power Supply 18 Volts PWM Signal Input Voltage 20 Volts Fault Output Supply Voltage 30 Volts Fault Output Current 50 mA Storage Temperature IGBT Inverter Gate Drive Board IGBT Inverter Electrical Characteristics, Tj = 25°C unless otherwise specified Characteristics Collector Cutoff Current Collector – Emitter Saturation Voltage Emitter – Collector Voltage Symbol Test Conditions Min Typ Max Units ICES VCE = VCES, VGE = 0V - - 1 mA VCE(sat) VEC IC = 150A, Tj = 25°C - 1.8 2.4 Volts IC = 150A, Tj = 125°C - 1.9 - Volts IE = 150A - - 3.2 Volts - - 150 ns td(on) Inductive Load Switching Times tr td(off) tf Diode Reverse Recovery Time trr Diode Reverse Recovery Charge Qrr DC Link Capacitance PP150B120(-) VCC = 600V IC = 150A VGE = 15V RG = 2.1Ω - - 80 ns - - 450 ns - - 300 ns - - 150 ns 6.0 - µC - 3300 µF -2- PP150B120 TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TM POW-R-PAK 150A / 1200V H-Bridge IGBT Assembly Gate Drive Board Electrical Characteristics Characteristics Unregulated +24V Power Supply Regulated +15V Power Supply PWM Input On Threshold Min Typ Max Units 20 24 30 Volts 14.4 15 18 Volts 12 15 PWM Input Off Threshold Volts 0 Output Overcurrent Trip 2 Volts 225 Overtemperature Trip 96 Amperes 98 Overvoltage Trip 100 °C 920 Volts DC Link Voltage Feedback See Figure Below Volts Heatsink Temperature Feedback See Figure Below Volts Output Current Feedback See Figure Below Volts DC Link Feedback Heatsink Temperature Feedback Output Current Feedback 120 800 700 600 500 400 300 200 100 0 400 100 Output Current (Amps) 900 Heatsink Temperature (ºC) DC Link Voltage (Volts) 1000 80 60 40 20 0 0 1 2 3 4 5 6 7 8 9 10 350 300 250 200 150 100 50 0 0 1 2 Feedback Voltage (Volts) 3 4 5 6 7 8 9 10 0 1 2 Feedback Voltage (Volts) 3 4 5 6 7 8 9 Feedback Voltage (Volts) Thermal and Mechanical Characteristics Characteristics Symbol Test Conditions Min Typ Max Units IGBT Thermal Resistance, Junction to Case Rth(j-c)Q Per IGBT ½ module - 0.11 0.21 °C/W FWD Thermal Resistance, Junction to Case Rth(j-c)D Per FWD ½ module 0.24 °C/W - 0.020 - °C/W Contact Thermal Resistance Rth(c-f) Heatsink Thermal Resistance Rth(f-a) 1500 LFM airflow 0.040 °C/W Mounting Torque, AC terminals 75 90 in-lb Mounting Torque, DC terminals 130 150 in-lb Mounting Torque, Mounting plate 130 150 in-lb Weight 21 PP150B120(-) lb -3- 10 TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 TM POW-R-PAK 150A / 1200V H-Bridge IGBT Assembly Gate Drive Board Interface Signal Definitions Pin Signal Name Description 1 Shield Connected to circuit ground 2 PWM A- 0-15 V signal controlling the duty cycle of A- IGBT 3 Phase A Error Open collector output, external pull-up resistor required LOW = No Error; Floating = Phase A overcurrent or short circuit 4 PWM A+ 0-15 V signal controlling the duty cycle of A+ IGBT 5 PWM B- 1 0-15 V signal controlling the duty cycle of B- IGBT 6 Phase B Error Open collector output, external pull-up resistor required LOW = No Error; Floating = Phase B overcurrent or short circuit 7 PWM B+ 0-15 V signal controlling the duty cycle of B+ IGBT 11 Overtemp1 Open collector output, external pull-up resistor required LOW = No Error; Floating = heatsink overtemp 12 Not Connected 13 DC Link Voltage 1 8 9 10 Analog voltage representation of DC link voltage 14 2 24 VDC input power 20 – 30 VDC input voltage range 15 24 VDC input power2 20 – 30 VDC input voltage range 16 2 14.4 – 18 VDC input voltage range 2 15 VDC input power 17 15 VDC input power 14.4 – 18 VDC input voltage range 18 GND Ground reference for 15 and 24 VDC inputs 19 GND Ground reference for 15 and 24 VDC inputs 20 Heatsink Temperature Analog voltage representation of heatsink temperature 3 21 GND Tied to pins 18 and 19 22 Iout Phase A Analog voltage representation of phase A output current 23 GND3 Tied to pins 18 and 19 24 Iout Phase B Analog voltage representation of phase B output current 25 26 Notes: 1. 2. 3. Open collectors can be pulled up to 30 V max and sink 50mA continuous. Do not connect a 15 VDC and 24 VDC source to the unit at the same time, use one or the other. GND signals to be used for analog feedback signals, i.e. twisted pair with Iout Phase A. Gate Drive Board Interface Connector Description Symbol Type Manufacturer J1 0.100” x 0.100” latching header, 26 pin 3M# 3429-6002 or equivalent Recommended Mating Socket - 0.100” x 0.100” IDC socket, 26 pin 3M# 3399-7600 or equivalent Recommended Strain Relief - Plastic strain relief 3M# 3448-3026 or equivalent Gate Drive Board Interface Header PP150B120(-) -4- PP150B120 TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 TM POW-R-PAK 150A / 1200V H-Bridge IGBT Assembly Performance Curves Effective Output Current vs. Carrier Frequency (Typical) 140 IGBT Junction Temperature 130 120 110 100 10kHz 90 5kHz 80 1kHz 70 60 50 40 40 60 80 100 120 140 160 180 200 220 Iout ARMS Condition Ambient Temperature DC Bus Voltage Symbol Value Units TA 40 °C Volts VCC 600 Load Power Factor cos φ 0.8 IGBT Saturation Voltage VCE(sat) Typical @ TJ = 125°C Volts ESW Typical @ TJ = 125°C mJ 1500 LFM IGBT Switching Loss Airflow Switching Conditions PP150B120(-) - 1 phase PWM, 60Hz sinusoidal output -5- TENTATIVE Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 PP150B120 TM POW-R-PAK 150A / 1200V H-Bridge IGBT Assembly Mechanical Drawing PP150B120(-) -6-