QIC0620001 Dual Common Emitter IGBT Module 200A 600V Per Switch Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Description: Powerex Dual Common Emitter IGBT Power Module features two common emitter IGBT’s. diodes. Features: • • • • • • Two switches - each capable of 200Amps Isolated Mounting Low Drive Requirement Internal Series Gate Resistors Isolation Material - DBC Alumina Baseplate Materal - Copper Schematic: 1 6 7 2 5 4 3 Dim A B C D E F G Inches Min. 3.681 3.145 1.329 1.28 1.161 0.940 0.901 Preliminary Inches Max 3.721 3.155 1.349 1.32 1.201 0.95 0.911 Millimeters Min 93.50 79.88 33.76 32.51 29.49 23.88 22.88 Millimeters Max 94.51 80.14 34.26 33.53 30.51 24.13 23.14 Page 1 Dim K L M N P Q S Inches Min. 0.61 0.502 0.46 0.403 0.305 0.251 --- Inches Max 0.65 0.522 0.48 0.423 0.325 0.261 --- Millimeters Min 15.49 12.75 11.68 10.24 7.75 6.38 M6 x 0.8 3/13/98 Millimeter Max 16.51 13.26 12.19 10.74 8.26 6.63 M6 x 0.8 QIC0620001 Dual Common Emitter IGBT Module 200A 600V Per Switch Powerex Inc., 200 Hillis St., Youngwood 15697 (724) 925-7272 Electrical Charactistics of Each Switch (2 switches per module) Part Symbol Parameter Units IGBT Vces Collector Emitter Voltage Vge=0 600 V (each Switch) (2 Switches/Module) Vges Rth(j-c) Gate Emitter Voltage Vce=0 Thermal Impedance Junction to case Quantity of IGBT Die 10mm x 10mm per switch 20 V 0.17 C/W 2 Package Vrms V Isolation Module weight Max. Mounting torque M6 Mounting screw Max. Terminal torque, M6 Terminal Screw 2000 500 6 6 600V, 200A IGBT Element Vcesat (Typical) 5.00 IGBT Vcesat (V) 4.00 3.00 2.00 25C 125C 1.00 0.00 0 50 100 150 200 250 300 350 400 MODULE CURRENT (A) Preliminary Page 2 3/13/98 V g Nm Nm