POWEREX QIS0660001

QIS0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Single IGBT H-Series
Hermetic Module
600 Amperes/600 Volts
Description:
Powerex IGBT Hermetic modules are
designed for use in switching applications.
Each Module consists of two IGBT transistors
in a half bridge configuration with each
transistor having a reverse connected super
fast recovery free wheel diode. All
components are located in a hermetically
sealed chamber and are electrically isolated
from the heat sinking base plate, offering
simplified system assembly and thermal
management.
Features:
♦ Low Drive Power
♦ Low VCE(sat)
♦ Discrete Super-Fast Recovery
(70ns) Free-Wheel Diode
♦ High Frequency Operation (2025kHz)
♦ Isolated Base plate for Easy Heat
sinking
♦ Fully Hermetic Package
♦ Package Design Capable of Use at
High Altitudes
♦ Package can be modified to adhere
to customer dimensions.
Schematic:
Applications:
♦ AC Motor Control
♦ Motion/Servo Control
♦ Air Craft Applications
Ordering Information:
Contact Powerex Custom Modules
Page 1
PRELIMINARY
05/30/97
QIS0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Single IGBT H-Series
Hermetic Module
600 Amperes/600 Volts
Maximum Ratings, Tj=25°°C unless otherwise specified
Ratings
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Peak Collector Current
Diode Forward Current
Diode Forward Surge Current
Power Dissipation
V Isolation
Symbol
VCES
VGES
IC
ICM
IFM
IFM
Pd
VRMS
Units
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
Volts
600
±20
600
1200*
600
1200*
2100
2500
Static Electrical Characteristics, Tj=25°°C unless otherwise specified
Characteristic
Collector Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
ICES
IGES
VGE(th)
VCE(sat)
VCE(sat)
Total Gate Charge
QG
Diode Forward Voltage
VFM
Test
Conditions
VCE=VCES
VCE=0V
IC=60mA,
VCE=10V
IC=600A,
VGE=15V
IC=600A,
VGE=15V,
Tj=150°C
VCC=300V,
IC=600A,
VGS=15V
IE=600A,
VGS=0V
Min
4.5
Typ
Max
Units
6.0
1.0
0.5
7.5
mA
µA
Volts
2.1
2.8
Volts
2.15
Volts
1800
nC
2.8
Volts
Dynamic Electrical Characteristics, Tj=25°°C unless otherwise specified
Characteristic
Symbol
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn on Delay time
Rise Time
Turn off delay time
Cies
Coes
Cres
td(on)
tr
td(off)
Fall Time
Diode Reverse Recovery Time
Diode reverse Recovery Charge
tf
trr
Qrr
Test
Conditions
VGE=0V
VCE=10V
f=1MHz
VCC=300V
IC=600A
VGE1=VGE2=15
V
RG=1Ω
IE=600A
diE/dt=
1200A/µS
Min
Typ
Max
Units
60
21
12
nF
nF
nF
nS
nS
nS
300
110
nS
nS
µC
1.62
Thermal and Mechanical Characteristics, Tj=25°°C unless otherwise specified
Characteristic
Thermal Resistance, Junction to
Page 2
Symbol
RθJC
Test
Conditions
IGBT
PRELIMINARY
Min
Typ
Max
Units
0.06
°C/W
05/30/97
QIS0660001
Powerex Inc., 200 Hillis St., Youngwood, PA 15697 (724) 925-7272
Case
Thermal Resistance, Junction to
Case
Page 3
RθJC
Diode
PRELIMINARY
Single IGBT H-Series
Hermetic Module
600 Amperes/600 Volts
0.12
°C/W
05/30/97