FR801S RECTRON THRU SEMICONDUCTOR TECHNICAL SPECIFICATION FR806S FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes FEATURES Fast switching Low leakage Low forward voltage drop High current capability High surge capability High reliability .05 (1.27 REF.) D2PAK .624 (15.84) .576 (14.64) .343 (8.70) .335 (8.50) Case: D2PAK molded plastic Epoxy: Device has UL flammability classification 94V-O Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 2.2 grams Polarity: As marking .151 (3.84) .143 (3.64) * * * * * * MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS o .052 (1.32) .048 (1.22) .032 (0.81) .200 (5.08) Ratings at 25 C ambient temperature unless otherwise specified. .401 (10.19) .399 (10.13) Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .185 (4.70) .177 (4.50) .051 (1.29) .049 (1.25) .065 (1.65) MECHANICAL DATA .043 (1.10) * * * * * * .015 (0.381) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At T A = 25 oC unless otherwise noted) SYMBOL FR801S FR802S FR803S FR804S FR805S FR806S UNITS Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 Volts Maximum RMS Voltage VRMS 35 70 140 280 420 560 Volts Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 Volts RATINGS Maximum Average Forward Rectified Current at T C = 75oC Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load (JEDEC method) IO 8.0 Amps I FSM 200 Amps Typical Thermal Resistance (Note 3) RθJC 3 Typical Junction Capacitance (Note 2) CJ 50 T J , T STG -65 to + 150 Operating and Storage Temperature Range 0 C/ W pF 0 C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Instantaneous Forward Voltage at 8.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage TA = 25 oC Maximum Full Load Reverse Current Average, Full Cycle at T C = 100 oC Maximum Reverse Recovery Time (Note 1) NOTES : 1. Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A 2. Measured at 1 MHz and applied reverse voltage of 4.0 volts 3. Thermal Resistance Junction to Case. 4. Suffix “R” for Reverse Polarity. SYMBOL VF FR801S FR802S FR803S FR804S 1.3 FR805S FR806S 10 UNITS Volts uAmps IR 150 trr 150 uAmps 250 500 nSec 2001-4 FIG. 2 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE PEAK FORWARD SURGE CURRENT, (A) 8 6 4 Single Phase Half Wave 60Hz Inductive or Resistive Load 2 0 0 25 8.3ms Single Half Sine-Wave (JEDED Method) 250 200 150 100 50 1 FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 5 10 20 50 NUMBER OF CYCLES AT 60Hz 100 10 10 3.0 TJ = 25oC Pulse Width=300uS 1% Duty Cycle 1.0 0.3 0.1 .03 6 4 2 1.0 .6 .4 .2 TJ = 25 .1 .06 .04 .02 .01 0.4 .01 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 200 40 (+) 25 Vdc (approx) (-) 20 10 6 4 TJ = 25oC 40 60 80 100 120 140 FIG. 6 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC 50 NONINDUCTIVE 100 60 20 PERCENT OF RATED PEAK REVERSE VOLTAGE, (%) FIG. 5 - TYPICAL JUNCTION CAPACITANCE 10 NONINDUCTIVE trr +0.5A (-) D.U.T 0 PULSE GENERATOR (NOTE 2) 1 NONINDUCTIVE OSCILLOSCOPE (NOTE 1) -0.25A (+) -1.0A NOTES:1 Rise Time = 7ns max. Input Impedance = 1 megohm. 22pF. 2. Rise Time = 10ns max. Source Impedance = 50 ohms. 2 1 .1 2 FIG. 4 - TYPICAL REVERSE CHARACTERISTICS 20 INSTANTANEOUS FORWARD VOLTAGE, (V) JUNCTION CAPACITANCE, (pF) 300 0 50 75 100 125 150 175 CASE TEMPERATURE, (oC) INSTANTANEOUS REVERSE CURRENT, (uA) INSTANTANEOUS FORWARD CURRENT, (A) AVERAGE FORWARD CURRENT, (A) RATING AND CHARACTERISTIC CURVES ( FR801S THRU FR806S ) .2 .4 1cm SET TIME BASE FOR 50/100 ns/cm 1.0 2 4 10 20 40 100 REVERSE VOLTAGE, ( V ) RECTRON