RECTRON SEMICONDUCTOR MM4150 TECHNICAL SPECIFICATION 1N4150 mini-MELF SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Reverse Voltage VR 50 Reverse Recovery trr 4 Time Power Dissipation Ptot 500 Forward Current Junction Temp. Storage Temp. IF Tj Tstg 200 -65 to 200 -65 to 200 m i n i -MEL F Unit V ns mW 1.40 1.30 mA °C °C 0.4 0.2 2 Places 3.40 3.20 Mechanical Data Items Package Case Lead/Finish Chip Materials MELF Hermetically sealed glass Double stud/Solder Plating Glass Passivated Mini Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage @IR= 100uA Peak Forward Surge Current PW< 1sec. Maximum Forward Voltage IF= 200mA Maximum Reverse Current VR= 50V Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Ω Maximum Thermal Resistance RECTRON USA Dimensions in millimeters Symbol BV Ratings 75 Unit V IFsurge 500 mA VF 1.0 V IR 100 nA Cj 4 pF trr 4 ns RθJA 0.35 °C/mW 1315 John Reed Court, Industry, CA 91745 Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com