RECTRON MM4150

RECTRON
SEMICONDUCTOR
MM4150
TECHNICAL SPECIFICATION
1N4150 mini-MELF SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol
Ratings
Reverse Voltage
VR
50
Reverse Recovery
trr
4
Time
Power Dissipation
Ptot
500
Forward Current
Junction Temp.
Storage Temp.
IF
Tj
Tstg
200
-65 to 200
-65 to 200
m i n i -MEL F
Unit
V
ns
mW
1.40
1.30
mA
°C
°C
0.4
0.2
2 Places
3.40
3.20
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
Materials
MELF
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Mini
Electrical Characteristics (Ta=25°C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
PW< 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100 Ω
Maximum Thermal Resistance
RECTRON USA
Dimensions in millimeters
Symbol
BV
Ratings
75
Unit
V
IFsurge
500
mA
VF
1.0
V
IR
100
nA
Cj
4
pF
trr
4
ns
RθJA
0.35
°C/mW
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com