RECTRON SEMICONDUCTOR 1N914B TECHNICAL SPECIFICATION 1N914B SIGNAL DIODE Absolute Maximum Ratings (Ta=25°C) Items Symbol Ratings Unit Reverse Voltage VR 75 V Reverse Recovery trr 4 ns Time Power Dissipation P 500 mW 3.33mW/°C (25°C) Forward Current IF 300 mA Junction Temp. Tj -65 to 175 °C Storage Temp. Tstg -65 to 175 °C Dimensions (DO-35) DO-35 26 MIN 0.457 DIA. 0.559 4.2 max. 2.0 DIA. max. Mechanical Data Items Package Case Materials DO-35 Hermetically sealed glass Chip Glass Passivated Electrical Characteristics (Ta=25°C) Ratings Minimum Breakdown Voltage IR= 5.0uA IR= 100uA Peak Forward Surge Current PW= 1sec. Maximum Forward Voltage IF= 100mA Maximum Reverse Current VR= 20V VR= 75V VR= 20V, Tj= 150°C Maximum Junction Capacitance VR= 0, f= 1 MHz Maximum Reverse Recovery Time IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ω RECTRON USA 26 MIN Dimensions in millimeters Symbol BV IFsurge VF Ratings 75 100 0.5 Unit V A V 1.0 IR uA 0.025 5.0 50 Cj pF 4 trr ns 4 www.rectron.com