Schottky Barrier Diodes 20V Electrical Characteristics (Ta = 25°C) Absolute Maximum Ratings Parameter VRM (V) Type No. I F (AV) (A) EK 02 * EK 12 * Tj (°C) IFSM (A) Tstg (°C) 50Hz Half-cycle Sinewave Single Shot 1.0 max 40 Others trr IR (mA) IR (H) (mA) IF (A) VR = VRM max VR = VRM Ta =100°C max 1.0 0.25 10 VF (V) (ns) IF /IRP (mA) Rth (j- ) Mass (°C/ W) (g) 20.0 0.3 A 17.0 0.3 B 8.0 1.2 C Fig. 100/100 20 RK 42 2.0 60 3.0 100 –40 to +150 0.47 2.0 0.5 20 3.0 1.00 20 100 500/500 * Under development EK 02 EK 12 1 0.1 0.01 0.001 115 120 125 130 External Dimensions 1 60ºC 0.1 27ºC 0.01 0.005 0 Lead Temperature T (°C) 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage VF (V) Fig. A (Unit: mm) 5 10 15 20 Reverse Voltage Fig. B 25 30 35 VR (V) I FSM (A) 80 20ms 60 40 20 0 1 5 10 50 Overcurrent Cycles Fig. C 1.4 ±0.1 0.78 ±0.05 0.6 ±0.05 Flammability: UL94V-0 or Equivalent 0 I FMS Rating 100 Cathode Mark Cathode Mark 5.0 ±0.2 62.3 ±0.7 Cathode Mark 2.7 ±0.2 2.7 ±0.2 8.0 ±0.2 110 Ta = 125ºC 100ºC 60ºC 27ºC 100ºC 50.0 ±0.1 0 105 t /T = 1/6 Reverse Current IR (mA) D.C. t /T= 1/ 3 1 Ta = 125ºC 10 5.0 ±0.2 2 t /T = 1/2 VR —IR Characteristics (Typical) 30 I FSM (A) Sinewave Forward Current IF (A) Average Forward Current VF —IF Characteristics (Typical) 20 10 Peak Forward Surge Current VR = 20V I F(AV) — T Characteristics I F (AV) (A) 3 62.3 ±0.7 RK 42 6.5 ±0.2 79