SANKEN SDH03

SDH03
PNP + NPN Darlington
H-bridge
External dimensions E
Absolute maximum ratings
•••
SD
(Ta=25°C)
Specification
Symbol
NPN
PNP
Unit
VCBO
100
–60
V
VCEO
100
–60
V
VEBO
6
–6
V
IC
1.5
–1.5
A
ICP
2.5 (PW≤1ms, Du≤100%)
–2.5 (PW≤1ms, Du≤10%)
A
IB
0.1
–0.1
A
PT
3 (Ta=25°C)
W
Tj
150
°C
Tstg
–40 to +150
°C
θ j–a
41.6
°C/W
■Equivalent circuit diagram
2
R 3 R4
6
1
15 16
11 12
13 14
9 10
3
5
R3: 4kΩ typ
R4: 100Ω typ
7
R1: 4kΩ typ
R2: 200Ω typ
R1 R2
4
8
Characteristic curves
IC-VCE Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
NPN
PNP
2.5
NPN
A
0.6m
A
2.0
–1.2mA
A
1.2
A
A
2m
–2m
A
4m
IB=–5m
IB=10mA
–2.0
0.4m
(VCE=4V)
2.5
–2.5
mA
–1.0mA
2.0
–0.8mA
–0.6mA
1.5
IC (A)
–0.5mA
–1.0
–0.4mA
0.5
–0.5
–0.3mA
1.0
T a=
1.0
125
°C
75°C
25°C
–30°C
–1.5
1.5
IC (A)
IC (A)
0.3mA
0
1
2
3
4
5
0
0
6
–1
–2
VCE (V)
–3
–4
0.5
–5
0
0
–6
1
VCE (V)
2
3
VBE (V)
hFE-IC Characteristics (Typical)
NPN
PNP
(VCE=4V)
10000
typ
PNP
(VCE=–4V)
10000
5000
5000
Typ
–2.0
–1.5
1000
IC (A)
hFE
1000
hFE
(VCE=–4V)
–2.5
500
–1.0
500
Ta=125°C
75°C
25°C
–30°C
–0.5
100
50
100
0.03 0.05
0.1
0.5
1
30
–0.03
2.5
–0.05
–0.1
IC (A)
–0.5
–1
–2.5
hFE-IC Temperature Characteristics (Typical)
NPN
PNP
(VCE=4V)
10000
(VCE=–4V)
10000
5000
5000
5°
C
2
=1
Ta
C
5°
7
25
°C
C
0°
1000
hFE
hFE
–3
1000
500
°C
25
=1 5°C
7 °C
Ta
25 C
0°
–3
500
100
100
0.03 0.05
0.1
0.5
IC (A)
168
1
2.5
50
–0.03 –0.05 –0.1
0
0
–1
–2
VBE (V)
IC (A)
–0.5
IC (A)
–1
–2.5
–3
SDH03
Electrical characteristics
(Ta=25°C)
NPN
Symbol
Specification
min
typ
Conditions
10
µA
VCB=100V
3
mA
VEB=6V
V
IC=10mA
–60
VCE=4V, IC=1A
2000
IEBO
VCEO
100
hFE
2000
Specification
Unit
max
ICBO
PNP
12000
VCE(sat)
1.3
V
VBE(sat)
2.2
V
min
typ
Unit
Conditions
–10
µA
VCB=–60V
–3
mA
VEB=–6V
V
IC=–10mA
max
12000
IC=1A, IB=2mA
VCE=–4V, IC=–1A
–1.4
V
–2.2
V
IC=–1A, IB=–2mA
Characteristic curves
θ j-a-PW Characteristics
VCE(sat)-IB Characteristics (Typical)
PNP
–3
2
–2
IC=2A
IC=1A
1
IC=0.5A
0
0.1
0.5
1
5
NPN
50
IC=–2A
IC=–1A
–1
θ j–a (°C / W)
3
VCE (sat) (V)
VCE (sat) (V)
NPN
10
5
IC=–0.5A
10
50
0
–0.1
100
–0.5
–1
–5
IB (mA)
–10
1
1
–50
5
10
50 100
500 1000
PW (mS)
IB (mA)
VCE(sat)-IC Temperature Characteristics (Typical)
25°C
–30°C
–2
Ta=–30
–1
75°C
PNP
(IC / IB=1000)
–3
VCE (sat) (V)
VCE (sat) (V)
2
1
PNP
(IC / IB=1000)
3
50
θ j–a (°C / W)
NPN
°C
25°C
10
5
Ta=125°C
125°C
75°C
0
0.2
0.5
1
0
–0.2
2.5
–0.5
–1
1
1
–2.5
5
10
Safe Operating Area (SOA)
500
1000
PT-Ta Characteristics
NPN
PNP
–5
5
3
4
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
µs
10
0
10
3
0µ
s
2
1m
s
1m
2
10
m
0.5
PT (W)
IC (A)
s
s
m
10
–1
s
1
IC (A)
50 100
PW (mS)
IC (A)
IC (A)
–0.5
1
1
0.1
Single Pulse
–0.1 Without Heatsink
Single Pulse
0.05 Without Heatsink
0.03 Ta=25°C
3
5
Ta=25°C
10
50
VCE (V)
100
–0.05
–3
–5
–10
–50
VCE (V)
–100
0
0
50
100
150
Ta (°C)
169