SDH03 PNP + NPN Darlington H-bridge External dimensions E Absolute maximum ratings ••• SD (Ta=25°C) Specification Symbol NPN PNP Unit VCBO 100 –60 V VCEO 100 –60 V VEBO 6 –6 V IC 1.5 –1.5 A ICP 2.5 (PW≤1ms, Du≤100%) –2.5 (PW≤1ms, Du≤10%) A IB 0.1 –0.1 A PT 3 (Ta=25°C) W Tj 150 °C Tstg –40 to +150 °C θ j–a 41.6 °C/W ■Equivalent circuit diagram 2 R 3 R4 6 1 15 16 11 12 13 14 9 10 3 5 R3: 4kΩ typ R4: 100Ω typ 7 R1: 4kΩ typ R2: 200Ω typ R1 R2 4 8 Characteristic curves IC-VCE Characteristics (Typical) IC-VBE Temperature Characteristics (Typical) NPN PNP 2.5 NPN A 0.6m A 2.0 –1.2mA A 1.2 A A 2m –2m A 4m IB=–5m IB=10mA –2.0 0.4m (VCE=4V) 2.5 –2.5 mA –1.0mA 2.0 –0.8mA –0.6mA 1.5 IC (A) –0.5mA –1.0 –0.4mA 0.5 –0.5 –0.3mA 1.0 T a= 1.0 125 °C 75°C 25°C –30°C –1.5 1.5 IC (A) IC (A) 0.3mA 0 1 2 3 4 5 0 0 6 –1 –2 VCE (V) –3 –4 0.5 –5 0 0 –6 1 VCE (V) 2 3 VBE (V) hFE-IC Characteristics (Typical) NPN PNP (VCE=4V) 10000 typ PNP (VCE=–4V) 10000 5000 5000 Typ –2.0 –1.5 1000 IC (A) hFE 1000 hFE (VCE=–4V) –2.5 500 –1.0 500 Ta=125°C 75°C 25°C –30°C –0.5 100 50 100 0.03 0.05 0.1 0.5 1 30 –0.03 2.5 –0.05 –0.1 IC (A) –0.5 –1 –2.5 hFE-IC Temperature Characteristics (Typical) NPN PNP (VCE=4V) 10000 (VCE=–4V) 10000 5000 5000 5° C 2 =1 Ta C 5° 7 25 °C C 0° 1000 hFE hFE –3 1000 500 °C 25 =1 5°C 7 °C Ta 25 C 0° –3 500 100 100 0.03 0.05 0.1 0.5 IC (A) 168 1 2.5 50 –0.03 –0.05 –0.1 0 0 –1 –2 VBE (V) IC (A) –0.5 IC (A) –1 –2.5 –3 SDH03 Electrical characteristics (Ta=25°C) NPN Symbol Specification min typ Conditions 10 µA VCB=100V 3 mA VEB=6V V IC=10mA –60 VCE=4V, IC=1A 2000 IEBO VCEO 100 hFE 2000 Specification Unit max ICBO PNP 12000 VCE(sat) 1.3 V VBE(sat) 2.2 V min typ Unit Conditions –10 µA VCB=–60V –3 mA VEB=–6V V IC=–10mA max 12000 IC=1A, IB=2mA VCE=–4V, IC=–1A –1.4 V –2.2 V IC=–1A, IB=–2mA Characteristic curves θ j-a-PW Characteristics VCE(sat)-IB Characteristics (Typical) PNP –3 2 –2 IC=2A IC=1A 1 IC=0.5A 0 0.1 0.5 1 5 NPN 50 IC=–2A IC=–1A –1 θ j–a (°C / W) 3 VCE (sat) (V) VCE (sat) (V) NPN 10 5 IC=–0.5A 10 50 0 –0.1 100 –0.5 –1 –5 IB (mA) –10 1 1 –50 5 10 50 100 500 1000 PW (mS) IB (mA) VCE(sat)-IC Temperature Characteristics (Typical) 25°C –30°C –2 Ta=–30 –1 75°C PNP (IC / IB=1000) –3 VCE (sat) (V) VCE (sat) (V) 2 1 PNP (IC / IB=1000) 3 50 θ j–a (°C / W) NPN °C 25°C 10 5 Ta=125°C 125°C 75°C 0 0.2 0.5 1 0 –0.2 2.5 –0.5 –1 1 1 –2.5 5 10 Safe Operating Area (SOA) 500 1000 PT-Ta Characteristics NPN PNP –5 5 3 4 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation µs 10 0 10 3 0µ s 2 1m s 1m 2 10 m 0.5 PT (W) IC (A) s s m 10 –1 s 1 IC (A) 50 100 PW (mS) IC (A) IC (A) –0.5 1 1 0.1 Single Pulse –0.1 Without Heatsink Single Pulse 0.05 Without Heatsink 0.03 Ta=25°C 3 5 Ta=25°C 10 50 VCE (V) 100 –0.05 –3 –5 –10 –50 VCE (V) –100 0 0 50 100 150 Ta (°C) 169