SANKEN SDC06_01

SDC06
NPN
With built-in avalanche diode
Absolute maximum ratings
External dimensions E
Electrical characteristics
(Ta=25°C)
SD
(Ta=25°C)
Specification
min
typ
max
Symbol
Ratings
Unit
Symbol
VCBO
30 to 45
V
ICBO
VCEO
30 to 45
V
IEBO
VEBO
6
V
VCEO
30
IC
2
A
hFE
400
ICP
3 (PW≤1ms, Du≤10%)
A
IB
30
mA
PT
3 (Ta=25°C)
W
VFEC
V
IFEC=1A
Tj
150
°C
ton
1.2
µs
VCC 10V,
Tstg
–40 to +150
°C
tstg
18.0
µs
IC=0.5A,
θ j–a
41.6
°C/W
tf
3.6
µs
IB1=5mA, IB2=0A
fT
20
MHz
VCE=12V, IE=–0.2A
Cob
50
pF
VCB=10V, f=1MHz
mJ
L=10mH, Single pulse
1.2
13,14
3
RB
11,12
5
RB
RBE
RBE
2
RB: 800Ω typ
10
µA
VCB=30V
mA
VEB=6V
45
V
IC=10mA
2000
VCE=4V, IC=0.5A
0.2
V
IC=0.5A, IB=5mA
0.6
V
IC=1A, IB=5mA
40
RB
RBE
4
Conditions
9,10
7
RB
Unit
2.8
2.0
ES/B
15,16
700
VCE(sat)
■Equivalent circuit diagram
1
•••
RBE
6
8
RBE: 2kΩ typ
Characteristic curves
IC-VCE Characteristics (Typical)
hFE-IC Characteristics (Typical)
(VCE=4V)
1000
3
12
m
A
IB=30mA
hFE-IC Temperature Characteristics (Typical)
(VCE=4V)
1000
typ
8mA
5mA
500
500
2
Ta=125°C
75°C
hFE
hFE
IC (A)
3mA
2mA
25°C
1
–30°C
1mA
0
0
1
2
3
4
5
6
100
0.03 0.05
0.1
0.5
VCE (V)
VCE(sat)-IC Temperature Characteristics (Typical)
3
100
0.03 0.05
0.1
0.5
1
3
IC (A)
VCE(sat)-IB Characteristics (Typical)
IC-VBE Temperature Characteristics (Typical)
(IC / IB=100)
3
1
=1
25
°C
75°
C
25
°C
VCE (sat) (V)
2
Ta
VCE (sat) (V)
1
IC (A)
1
IC=1A
IC=0.5A
–30°C
0
0.2
0.5
1
0
1
3
5
IC (A)
10
30
IB (mA)
θ j-a-PW Characteristics
PT-Ta Characteristics
50
3
Safe Operating Area (SOA)
5
4
1-1 Chip Operation
2-2 Chip Operation
3-3 Chip Operation
4-4 Chip Operation
3
1mS
2
5
1
0.5
1
1
1
5
10
50 100
PW (mS)
196
1
IC (A)
10
PT (W)
θ j–a (°C / W)
2
500 1000
0
0
50
100
Ta (°C)
150
0.1
5
Single Pulse
Without Heatsink
Ta=25°C
10
50
VCE (V)