3-circuit High-side Power Switch Array SLA2501M External Dimensions (unit: mm) 31 ±0.2 Ellipse 3.2 ±0.15 • 3.8 4.8 ±0.2 24.4 ±0.2 1.7 ±0.1 16 ±0.2 9.9 ±0.2 3.2 ±0.15 12.9 ±0.2 ● Built-in diagnostic function to detect short and open circuiting of loads and output status signals ● Low saturation PNP transistor use (VCE (sat) 0.2V) ● Allows direct driving using LS-TTL and C-MOS logic levels ● Built-in Zener diode in transistor eliminates the need of (or simplifies) external surge absorption circuit ● Built-in independent overcurrent and thermal protection circuit in each circuit ● Built-in protection against reverse connection of power supply ● Tj = 150ºC guaranteed a b 2.45 ±0.2 6.4 ±0.5 Features +0.2 +0.2 +0.2 1.15 –0.1 0.55 –0.1 0.65 –0.1 14 • P2.03 ±0.1= (28.42) Absolute Maximum Ratings Parameter Power supply voltage (Ta=25ºC) Symbol Ratings Unit VB –13 to +40 V Drive terminal applied voltage VD –0.3 to VB V Input terminal voltage VIN –0.3 to +7.0 V DIAG output applied voltage VDIAG –0.3 to +7.0 V DIAG output source current IDIAG –3 mA Voltage across power supply and output terminal VB–O VB –34 V Voltage across power supply and drive terminal VB–D –0.4 V Conditions 31.3 ±0.2 a: Type No. b: Lot No. 1 23 Output current IO 1.5 A Output reverse current IO –1.8 A 15 Equivalent Circuit Diagram VB a Electrostatic resistance Power Dissipation ±250 ES/A V C = 200pF, R = 0Ω Stand-alone without heatsink, all circuits operating PD 4.8 W Tj –40 to +150 ºC Operating temperature TOP –40 to +115 ºC Storage temperature Tstg –50 to +150 ºC Junction temperature Electrical Characteristics Symbol Operating power supply voltage VBopr Quiescent circuit current (per circuit) Circuit current (per circuit) MIC GND Unit 16 V Iq 0.8 1.6 mA Lo output IB 19.3 mA Tj = 25ºC VINth 0.8 VIN 3.7 Lo output VIN 3.0 VB V VCC V 1.5 I IN –1.0 Input current Lo output I IN VCE (sat) mA VCE (sat) 1.0 Output terminal sink current IO (off) 2.5 Surge clamp voltage VB–O 5 VIN = 5V V 5 mA Tj = 25ºC, VCEO = 14V V 34 39 V Tj = 25ºC, IC = 10mA 34 40 V IC = 5mA Saturation voltage of DIAG output VDL 0.4 V Leak current of DIAG output IDGH –100 µA Open load detection resistor Ropen 5.5 kΩ Overcurrent protection starting current IS 1.6 A VO = VBopr –1.5V ºC VBopr 6V 30 µS IO = 1A µS IO = 1A TPLH 30 µS IO = 1A µS IO = 1A Maximum ON duty 100 1.0 D(ON) 0 mH 60 4 FLT2 8 Diagnostic Function 100 Lo SLA2501M IDGH = –2mA, VBopr = 6 to 16V TON TPHL Minimum load inductance FLT1 IN2 VCC = 7V TOFF DIAG output transfer time 3 9 14 D1 D2 D3 FLT3 13 GND1 GND2 OUT1 OUT2 OUT3 6 11 2 10 15 IO 1.5A, VBopr = 6 to 16V 28 1 VB IN1 12 IN3 IO 1.2A, VBopr = 6 to 16V 29 TTSD 7 VIN = 0V 0.2 Output transfer time 32 V µA 100 Saturation voltage of output transistor Thermal protection starting temperature e: Overcurrent protection circuit f: Diagnostic circuit g: Thermal protection circuit Standard Circuit Diagram Input voltage Hi output FLT a: Pre-regulator b: Overvoltage protection circuit c: Control circuit d: Driver circuit Conditions max Hi output Threshold input voltage OUT D typ 6.0 e g f (VBopr =14V, Tj= –40 to +150ºC unless otherwise specified) min d c Ratings Parameter b VIN % Note: * The Zener diode has an energy capability of 200 mJ (single pulse). * A start failure may occur if a short OFF signal of 10 ms or below is input in the VIN terminal. Normal VIN VO VDIAG Open load Shorted load Overheat Normal ■ Quiescent Circuit Current (single circuit) ■ Circuit Current (single circuit) 5 ■ Saturation Voltage of Output Transistor 40 1.0 VIN = 5V VIN = 0V V IN = 5V V B = 6 to 16V Ta = –40ºC 2 Ta = 25ºC Ta =125ºC VCE (sat) (V) 3 Ta =150ºC 30 Ta = –40ºC Ta = 25ºC Ta = 125ºC IB (mA) Iq (mA) 4 20 Ta = 125ºC Ta = –40ºC 0.5 Ta =25 ºC 10 1 0 0 10 20 30 0 40 0 10 20 30 0 40 0 1 2 3 3.5 VB (V) VB (V) IO (A) ■ Overcurrent Protection Characteristics (Ta= –40ºC) ■ Overcurrent Protection Characteristics (Ta=25ºC) ■ Overcurrent Protection Characteristics (Ta=115ºC) 20 20 20 0 1 3 2 VO (V) 10 0 10 0 1 I OUT = 1A 3 3 2 4 ■ Input Current (Output OFF) 20 V IN = 0V V B = 14V V IN = 0V IIL (µA) 0.5 0 --50 4 50 0 VIN (V) 100 10 0 –50 125 100 125 Ta (ºC) ■ Output Reverse Current ■ Thermal Protection 1.4 V B = 14V VIN = 5V I FLT = 3 (mA) 50 0 Ta (ºC) ■ Saturation Voltage of DIAG Output 0.3 1 25ºC –40ºC 0 2 0 IO (A) VB = 14V IIH (mA) VO (V) 5 1.0 10 1 4 ■ Input Current (Output ON) Ta = 125ºC 0 3 2 IO (A) ■ Threshold Input Voltage VB = 16V 10 0 0 4 IO (A) 20 VB = 14V V B = 14V VO (V) VO (V) VB = 14V 20 10 V B = 16V IO = 10mA 1.2 VO 1.0 0.1 Ta = 25ºC 0.6 Ta = 125ºC 10 VFLT (V) Ta = --40ºC 0.8 VO (V) VF (V) VDL (V) 0.2 V FLT 5 0.4 0.2 0 –50 0 50 Ta (ºC) 100 125 0 0 1 2 IF (A) 3 4 0 0 60 100 160 180 Ta (ºC) 33