SANKEN SLA5007

SLA5007
N-channel + P-channel
External dimensions A
H-bridge
Absolute maximum ratings
(Ta=25°C)
Ratigs
Symbol
Unit
N channel
P channel
VDSS
60
–60
V
VGSS
±20
20
V
ID
±5
4
A
ID(pulse)
±10 (PW≤1ms)
8 (PW≤1ms)
A
EAS*
2
—
mJ
5 (Ta=25°C, with all circuits operating, without heatsink)
PT
•••
W
35 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-a
25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
3.57 (Junction-Case, Tc=25°C, with all circuits operating)
°C/W
VISO
1000 (Between fin and lead pin, AC)
Vrms
Tch
150
°C
Tstg
–40 to +150
°C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch 12
8
9
4
11
2
Nch
1
5
6
3
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch
P-ch
10
N-ch
(VDS=10V)
10
---8
10V
–10V
7V
8
8
---6
–7V
ID (A)
6V
ID (A)
ID (A)
6
---4
6
4
4
TC=–40°C
–6V
5V
25°C
---2
2
2
125°C
–5V
VGS=4V
VGS=–4V
---0
0
0
4
2
6
8
0
10
---2
---4
---6
---8
0
---10
0
2
VDS (V)
VDS (V)
4
6
8
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(VGS=10V)
0.20
0.6
P-ch
(VGS=–10V)
(VDS=–10V)
---8
TC=–40°C
25°C
0.5
0.3
RDS
0.10
0.4
ID (A)
(ON)
(Ω)
(Ω)
(ON)
RDS
125°C
---6
0.15
---4
0.2
0.05
---2
0.1
0
0
2
4
6
8
0
10
0
---2
ID (A)
---4
---6
---8
ID (A)
0.3
P-ch
ID=5A
VGS=10V
1.0
ID=–4A
VGS=–10V
(Ω)
(ON)
RDS
RDS
(ON)
(Ω)
0.8
0.2
0.6
0.4
0.1
0.2
0
---40
0
50
TC (°C)
40
100
150
0
---40
0
50
TC (°C)
0
---2
---4
---6
VGS (V)
RDS(ON)-TC Characteristics (Typical)
N-ch
---0
100
150
---8
---10
SLA
SLA5007
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specification
min
V(BR)DSS
typ
max
60
P channel
Specification
Unit
Conditions
V
ID=250µA, VGS=0V
min
±500
nA
VGS=±20V
IDSS
250
µA
VDS=60V, VGS=0V
4.0
V
VDS=10V, ID=250µA
–2.0
S
VDS=10V, ID=5A
1.6
VTH
2.0
2.2
3.3
max
Unit
Conditions
V
ID=–250µA, VGS=0V
–60
IGSS
Re(yfs)
typ
500
nA
VGS= 20V
–250
µA
VDS=–60V, VGS=0V
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–4A
–4.0
2.2
RDS(ON)
0.17
Ω
VGS=10V, ID=5A
0.38
Ω
VGS=–10V, ID=–4A
Ciss
300
pF
VDS=25V, f=1.0MHz,
270
pF
VDS=–25V, f=1.0MHz,
Coss
160
pF
VGS=0V
170
pF
VGS=0V
ton
35
ns
ID=5A, VDD 30V,VGS=10V
60
ns
ID=–4A, VDD –30V,VGS=10V,
ns
see Fig. 3 on page 16.
60
ns
see Fig. 4 on page 16.
V
ISD=5A, VGS=0V
–4.4
V
ISD=–4A, VGS=0V
ns
ISD=±100mA
150
ns
ISD= 100mA
toff
35
VSD
1.1
trr
140
0.22
1.5
0.55
–5.5
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
(VDS=10V)
10
Safe Operating Area (SOA)
P-ch
N-ch
(VDS=–10V)
5
(TC=25°C)
20
ID (pulse) max
10
5
5°
12
C
1
LI
10
S
s
s
(O
1
s
(1
sh
ot
D
R
0µ
1m
m
N
ID (A)
Re (yfs) (S)
°C
40
=–
TC
)
40
=–
°C
TC
25
C
5°
12
IT
M
°C
Re (yfs) (S)
10
ED
5
)
1
0.5
25°C
0.5
0.5
0.3
0.08
0.5
1
5
0.3
---0.1
10
---0.5
---1
ID (A)
---5
0.1
0.5
---8
1
5
10
50
100
VDS (V)
ID (A)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
N-ch
1000
VGS=0V
f=1MHz
P-ch
700
P-ch
IT
ED
M
LI
sh
(O
S
RD
ID (A)
)
N)
ot
Capacitance (pF)
(1
---1
---0.5
Crss
Crss
10
10
0
10
20
30
40
0
50
---10
---20
VDS (V)
---30
---40
---50
---0.1
---0.5
---1
---5
---10
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
P-ch
---8
10
40
With Silicone Grease
Natural Cooling
All Circuits Operating
35
8
30
0V
–1
IDR (A)
10
k
sin
at
He
V
ite
fin
20
15
5V
10
S=
S=
0V
0V
V
–5
---2
VG
VG
2
25
In
---4
ith
W
6
PT (W)
---6
4
Without Heatsink
5
0
0
---0
0
---50 ---100
VDS (V)
VDS (V)
N-ch
IDR (A)
Capacitance (pF)
µs
s
m
50
s
10
50
Coss
100
1m
---5
Ciss
Ciss
Coss
0
10
ID (pulse) max
500
100
(TC=25°C)
---10
500
1.0
0.5
VSD (V)
1.5
0
---1
---2
---3
VSD (V)
---4
---5
0
50
100
150
Ta (°C)
41