SLA5085 Absolute maximum ratings N-channel General purpose Ratings Unit Symbol VDSS VGSS ID 60 ±20 10 ID(pulse) EAS* 10 (PW≤1ms, duty≤25%) 30 V V A A mJ V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss Crss td(on) tr td(off) tf VSD trr θ j-a θ j-c VISO Tch Tstg 5 (Ta=25°C, with all circuits operating, without heatsink) W 30 (Tc=25°C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W 4.17 (Junction-Case, Tc=25°C, with all circuits operating) °C/W 1000 (Between fin and lead pin, AC) Vrms 150 °C –40 to +150 °C * : VDD=40V, L=20mH, ID=1A, unclamped, RG=50Ω, see Fig. E on page 15. ■Equivalent circuit diagram 3 2 5 7 4 6 9 ••• SLA (12-pin) Electrical characteristics (Ta=25°C) Symbol PT External dimensions A (Ta=25°C) Specification min typ max 60 ±100 100 1.0 2.0 3.7 5.5 0.16 0.22 320 160 35 16 65 70 45 1.05 1.5 65 Unit Conditions V nA µA V S Ω pF pF pF ns ns ns ns V ns ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=3A VGS=4V, ID=3A VDS=10V, f=1.0MHz, VGS=0V ID=3A, VDD 20V, RL=6.67Ω, VGS=5V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=3A, VGS=0V, di/dt=100A/µs 11 10 8 1 12 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) (Ta=25°C) RDS(ON)-ID Characteristics (Typical) (VDS=10V) 10 (Ta=25°C) 0.30 4V 10 10V 3.7V 0.25 8 8 4 3.0V 4 6 0.20 4V 0.15 VGS=10V RDS 3.3V ID (A) ID (A) 6 (ON) (Ω) 3.5V Ta=125°C 0.10 25°C 2.7V 2 2 0 0 0 2 4 6 8 0.05 –40°C VGS=2.5V 10 0 1 2 3 4 0 5 0 2 4 VGS (V) VDS (V) Re(yfs)-ID Characteristics (Typical) RDS(ON)-TC Characteristics (Typical) (VDS=10V) 50 6 8 10 ID (A) Capacitance-VDS Characteristics (Typical) VGS=0V (Ta=25°C) f=1MHz (ID=3A) 0.35 1000 0.30 25°C 1 0.20 0.15 125°C VG S= 10 Capacitance (pF) °C –40 (ON) (Ω) 0.25 Ta= RDS Re (yfs) (S) 10 V 10V 0.10 Ciss Coss 100 0.05 0.1 0.05 0.1 10 1 Crss 0.00 –40 0 50 ID (A) 10 150 100 0 10 20 TC (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) (Ta=25°C) 10 30 40 50 VDS (V) PT-Ta Characteristics 20 All Circuits Operating 40 10 35 s 0µ 10 8 LI M IT ED PT (W) (O N) 10 V RD S t) ID (A) ho 0V 1s S= s( 4V m VG s 4 10 6 1m IDR (A) 30 1 25 W 20 15 ith Inf ini te He ats ink 10 2 0 1-Circuit Operation 0 0.5 1.0 VSD (V) 104 1.5 0.1 0.1 Without Heatsink 5 TC=25°C 0 1 10 VDS (V) 100 0 50 100 Ta (°C) 150