SANKEN SLA5013

SLA5013
N-channel + P-channel
H-bridge
External dimensions A
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
N channel
P channel
Unit
VDSS
100
–100
V
VGSS
±20
20
V
±5
ID
±10 (PW≤1ms)
ID(pulse)
EAS*
5
A
10 (PW≤1ms)
A
30
—
mJ
5 (Ta=25°C, with all circuits operating, without heatsink)
PT
•••
W
35 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a
25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
3.57 (with all circuits operating, Tc=25°C, with all circuits operating)
°C/W
VISO
1000 (Between fin and lead pin, AC)
Vrms
Tch
150
°C
Tstg
–40 to +150
°C
* : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
10
7
Pch 12
8
11
2
Nch
9
4
5
1
6
3
Characteristic curves
ID-VDS Characteristics (Typical)
ID-VGS Characteristics (Typical)
N-ch
P-ch
N-ch
–10
10
–10V
7V
–8
8
8
6V
–7V
4
–6
–4
–6V
–2
–5V
ID (A)
ID (A)
ID (A)
6
6
4
TC=–40°C
25°C
5V
2
VGS=4V
125°C
2
VGS=–4V
–0
0
0
2
(VDS=10V)
10
10V
4
6
8
0
10
–2
–4
–6
–8
0
–10
0
2
4
VDS (V)
VDS (V)
6
8
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(VGS=10V)
P-ch
(VGS=–10V)
1.0
(VDS=–10V)
–10
0.8
–8
0.6
–6
TC =
–40
°C
25°
C
0.4
5°
C
12
0.1
0
0
2
4
6
8
0.4
–4
0.2
–2
0
10
ID (A)
(ON)
RDS
0.2
RDS
(ON)
(Ω)
(Ω)
0.3
–0
0
–2
ID (A)
–4
–6
–8
–10
RDS(ON)-TC Characteristics (Typical)
N-ch
0.5
ID=5A
VGS=10V
P-ch
1.2
(Ω)
(ON)
0.3
0.8
0.6
RDS
(Ω)
(ON)
RDS
ID=–5A
VGS=–10V
1.0
0.4
0.2
0.4
0.1
0
–40
0.2
0
50
TC (°C)
50
100
150
0
–40
0
50
TC (°C)
0
–2
–4
–6
VGS (V)
ID (A)
100
150
–8
–10
SLA
SLA5013
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specification
min
V(BR)DSS
typ
max
100
P channel
Specification
Unit
Conditions
V
ID=250µA, VGS=0V
min
±500
nA
VGS=±20V
IDSS
250
µA
VDS=100V, VGS=0V
4.0
V
VDS=10V, ID=250µA
–2.0
S
VDS=10V, ID=5A
0.9
VTH
2.0
2.4
3.7
max
Unit
Conditions
V
ID=–250µA, VGS=0V
–100
IGSS
Re(yfs)
typ
500
nA
VGS= 20V
–250
µA
VDS=–100V, VGS=0V
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–5A
–4.0
2.0
RDS(ON)
0.27
Ω
VGS=10V, ID=5A
0.55
Ω
VGS=–10V, ID=–5A
Ciss
350
pF
VDS=25V, f=1.0MHz,
300
pF
VDS=–25V, f=1.0MHz,
Coss
130
pF
VGS=0V
200
pF
ton
60
ns
ID=5A, VDD 50V, VGS=10V,
150
ns
ns
see Fig. 3 on page 16.
200
V
ISD=5A, VGS=0V
–4.5
ns
ISD=±100mA
220
toff
40
VSD
1.1
trr
330
0.30
1.8
0.7
VGS=0V
ID=–5A, VDD
–50V, VGS=–10V,
ns
see Fig. 4 on page 16.
V
ISD=–5A, VGS=0V
ns
ISD= 100mA
–5.5
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
Safe Operating Area (SOA)
P-ch
(VDS=10V)
7
N-ch
(VDS=–10V)
10
ID (pulse) max
5
0µ
10
°C
C
5°
12
1
TC
=–
D
TE
10
I
M
LI
)
C
S
s
m
s
(1
sh
ot
(O
)
D
R
1
1
25°C
s
1m
N
5°
12
ID (A)
40
=–
TC
5
°C
40
Re (yfs) (S)
Re (yfs) (S)
(TC=25°C)
20
5
0.5
25°C
0.5
0.5
0.3
0.05
0.5
0.1
1
5
0.3
–0.05 –0.1
10
0.1
–5
–0.5 –1
–10
0.5
1
5
10
50
100
VDS (V)
ID (A)
ID (A)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
N-ch
1000
VGS=0V
f=1MHz
P-ch
1000
P-ch
(TC=25°C)
–20
10
ID (pulse) max
Ciss
0µ
s
500
Coss
100
50
Ciss
10
D
–5
E
IT
Coss
100
LI
1m
m
s
M
)
ID (A)
Capacitance (pF)
Capacitance (pF)
500
–10
(1
sh
ot
N
S
R
s
)
(O
D
–1
–0.5
50
Crss
Crss
20
10
0
10
20
30
40
0
50
–10
–20
–30
–40
–50
–0.1
–0.5
–1
–5
VDS (V)
VDS (V)
–10
–50 –100
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
N-ch
P-ch
10
–10
8
–8
6
–6
40
With Silicone Grease
Natural Cooling
All Circuits Operating
35
30
0.5
PT (W)
0V
10
1.5
0
–1
–2
VSD (V)
Without Heatsink
5
VG
1.0
VSD (V)
V
–5
S=
0V
S=
VG
IDR (A)
IDR (A)
k
0
sin
–2
0
at
He
0
ite
–1
5V
fin
2
20
15
0V
V
10
In
–4
ith
W
4
25
–3
–4
0
0
50
100
150
Ta (°C)
51