SLA5013 N-channel + P-channel H-bridge External dimensions A Absolute maximum ratings (Ta=25°C) Ratings Symbol N channel P channel Unit VDSS 100 –100 V VGSS ±20 20 V ±5 ID ±10 (PW≤1ms) ID(pulse) EAS* 5 A 10 (PW≤1ms) A 30 — mJ 5 (Ta=25°C, with all circuits operating, without heatsink) PT ••• W 35 (Tc=25°C, with all circuits operating, with infinite heatsink) W θ j-a 25 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 3.57 (with all circuits operating, Tc=25°C, with all circuits operating) °C/W VISO 1000 (Between fin and lead pin, AC) Vrms Tch 150 °C Tstg –40 to +150 °C * : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15. ■Equivalent circuit diagram 10 7 Pch 12 8 11 2 Nch 9 4 5 1 6 3 Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) N-ch P-ch N-ch –10 10 –10V 7V –8 8 8 6V –7V 4 –6 –4 –6V –2 –5V ID (A) ID (A) ID (A) 6 6 4 TC=–40°C 25°C 5V 2 VGS=4V 125°C 2 VGS=–4V –0 0 0 2 (VDS=10V) 10 10V 4 6 8 0 10 –2 –4 –6 –8 0 –10 0 2 4 VDS (V) VDS (V) 6 8 VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch P-ch (VGS=10V) P-ch (VGS=–10V) 1.0 (VDS=–10V) –10 0.8 –8 0.6 –6 TC = –40 °C 25° C 0.4 5° C 12 0.1 0 0 2 4 6 8 0.4 –4 0.2 –2 0 10 ID (A) (ON) RDS 0.2 RDS (ON) (Ω) (Ω) 0.3 –0 0 –2 ID (A) –4 –6 –8 –10 RDS(ON)-TC Characteristics (Typical) N-ch 0.5 ID=5A VGS=10V P-ch 1.2 (Ω) (ON) 0.3 0.8 0.6 RDS (Ω) (ON) RDS ID=–5A VGS=–10V 1.0 0.4 0.2 0.4 0.1 0 –40 0.2 0 50 TC (°C) 50 100 150 0 –40 0 50 TC (°C) 0 –2 –4 –6 VGS (V) ID (A) 100 150 –8 –10 SLA SLA5013 Electrical characteristics (Ta=25°C) N channel Symbol Specification min V(BR)DSS typ max 100 P channel Specification Unit Conditions V ID=250µA, VGS=0V min ±500 nA VGS=±20V IDSS 250 µA VDS=100V, VGS=0V 4.0 V VDS=10V, ID=250µA –2.0 S VDS=10V, ID=5A 0.9 VTH 2.0 2.4 3.7 max Unit Conditions V ID=–250µA, VGS=0V –100 IGSS Re(yfs) typ 500 nA VGS= 20V –250 µA VDS=–100V, VGS=0V V VDS=–10V, ID=–250µA S VDS=–10V, ID=–5A –4.0 2.0 RDS(ON) 0.27 Ω VGS=10V, ID=5A 0.55 Ω VGS=–10V, ID=–5A Ciss 350 pF VDS=25V, f=1.0MHz, 300 pF VDS=–25V, f=1.0MHz, Coss 130 pF VGS=0V 200 pF ton 60 ns ID=5A, VDD 50V, VGS=10V, 150 ns ns see Fig. 3 on page 16. 200 V ISD=5A, VGS=0V –4.5 ns ISD=±100mA 220 toff 40 VSD 1.1 trr 330 0.30 1.8 0.7 VGS=0V ID=–5A, VDD –50V, VGS=–10V, ns see Fig. 4 on page 16. V ISD=–5A, VGS=0V ns ISD= 100mA –5.5 Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch Safe Operating Area (SOA) P-ch (VDS=10V) 7 N-ch (VDS=–10V) 10 ID (pulse) max 5 0µ 10 °C C 5° 12 1 TC =– D TE 10 I M LI ) C S s m s (1 sh ot (O ) D R 1 1 25°C s 1m N 5° 12 ID (A) 40 =– TC 5 °C 40 Re (yfs) (S) Re (yfs) (S) (TC=25°C) 20 5 0.5 25°C 0.5 0.5 0.3 0.05 0.5 0.1 1 5 0.3 –0.05 –0.1 10 0.1 –5 –0.5 –1 –10 0.5 1 5 10 50 100 VDS (V) ID (A) ID (A) Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz N-ch 1000 VGS=0V f=1MHz P-ch 1000 P-ch (TC=25°C) –20 10 ID (pulse) max Ciss 0µ s 500 Coss 100 50 Ciss 10 D –5 E IT Coss 100 LI 1m m s M ) ID (A) Capacitance (pF) Capacitance (pF) 500 –10 (1 sh ot N S R s ) (O D –1 –0.5 50 Crss Crss 20 10 0 10 20 30 40 0 50 –10 –20 –30 –40 –50 –0.1 –0.5 –1 –5 VDS (V) VDS (V) –10 –50 –100 VDS (V) IDR-VSD Characteristics (Typical) PT-Ta Characteristics N-ch P-ch 10 –10 8 –8 6 –6 40 With Silicone Grease Natural Cooling All Circuits Operating 35 30 0.5 PT (W) 0V 10 1.5 0 –1 –2 VSD (V) Without Heatsink 5 VG 1.0 VSD (V) V –5 S= 0V S= VG IDR (A) IDR (A) k 0 sin –2 0 at He 0 ite –1 5V fin 2 20 15 0V V 10 In –4 ith W 4 25 –3 –4 0 0 50 100 150 Ta (°C) 51