SANKEN SLA5027

MOS FET Array SLA5027
j-c
VISO
Tch
Tstg
(Fin to lead terminal) AC1000
mJ
ºC/W
Vrms
ºC
ºC
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
ID = 100µA, VGS = 0V
VGS = ±20V
VDS = 60V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 8A
VGS = 4V, ID = 8A
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
150
–55 to +150
*1 PW 250µs, duty 1%
*2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω
min
Unit
max
60
1.0
6.0
1.5
12.0
0.07
1100
500
170
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 8A
VDD 30V
RL = 3.75Ω
VGS = 5V
RG = 50Ω
0.08
50
250
250
180
1.0
ISD = 10A, VGS = 0V
V
µA
µA
V
S
Ω
pF
pF
pF
ns
ns
ns
ns
V
±100
100
2.0
1.5
Ellipse 3.2±0.15 • 3.8
31.0±0.2
3.2±0.15
24.4±0.2
16.4
4.8±0.2
1.7±0.1
±0.2
Lead plate thickness
resins 0.8max
250
2.08
Test Conditions
8.5max
EAS*2
Symbol
External Dimensions SLA (LF800)
16.0±0.2
60 (Tc=25ºC,4 circuits operate)
(Ta=25ºC)
Ratings
typ
13.0±0.2
5 (Ta=25ºC, 4 circuits operate)
PT
Unit
V
V
A
A
W
W
9.9±0.2
Ratings
60
±20
±12
±48
a
b
2.7
Symbol
VDSS
VGSS
ID
ID (pulse)*1
9.5min (10.4)
Electrical Characteristics
Absolute Maximum Ratings (Ta=25ºC)
12
Pin 1
0.85
1.2±0.15
+0.2
–0.1
0.55
1.45±0.15
2.2±0.7
+0.2
–0.1
11•P2.54±0.7 =27.94±1.0
31.5 max
1 2 3 4 5 6 7 8 9 10 11 12
a) Type No.
b) Lot No.
(Unit: mm)
■ ID — VDS Characteristics
■ ID — VGS Characteristics
10
■ R DS (on) — I D Characteristics
12
0.1
VDS = 10V
10
VGS = 4V
4V
5V
10V
RDS (on) (Ω)
8
8
ID (A)
ID (A)
6
VGS = 3V
4
6
Ta = 150ºC
75ºC
25ºC
–55ºC
4
2
0
0.05
VGS = 10V
2
0
1
2
3
4
5
0
6
0
1
2
VDS (V)
3
0
0.1
4
1
VGS (V)
■ Re (yfs) — I D Characteristics
■ R DS (on) — TC Characteristics
20
■ I DR — VSD Characteristics
30
0.12
10
ID (A)
20
VDS = 10V
VGS = 4V
VGS = 0V
10
0.10
VGS = 10V
0.06
10
IDR (A)
Re (yfs) (S)
RDS (on) (Ω)
5
5
0.02
–50
0
50
100
0.5
2
0.4
150
1
5
■ Capacitance — VDS Characteristics
ne
ED
IT
M
=4
LI
GS
n)
dV
(o
me
DS
su
R
As
s
VDS (V)
7
10
s
ID (A)
s
5m
1m
5
1
4
2
50
6
0m
10
3
1
10
Equivalent Circuit Diagram
s
ID (DC) max
Crss
50
1.2
m
Coss
10
Capacitance (pF)
(Ta = 25ºC)
10
500
0.8
ID (pulse) max
Ciss
5
0.4
0.
VGS = 0V
f = 1MHz
1
0
VSD (V)
V li
50
100
0.1
20
■ Safe Operating Area (single pulse)
2000
82
10
ID (A)
Tc (ºC)
1000
1
0.5
0.5
1
5
10
VDS (V)
50 100
8
5
11
9
12