MOS FET Array SLA5027 j-c VISO Tch Tstg (Fin to lead terminal) AC1000 mJ ºC/W Vrms ºC ºC V(BR) DSS IGSS IDSS VTH Re (yfs) RDS (ON) ID = 100µA, VGS = 0V VGS = ±20V VDS = 60V, VGS = 0V VDS = 10V, ID = 1mA VDS = 10V, ID = 8A VGS = 4V, ID = 8A Ciss Coss Crss t d (on) tr t d (off) tf VSD 150 –55 to +150 *1 PW 250µs, duty 1% *2 VDD = 30V, L = 10mH, unclamped, RG = 50Ω min Unit max 60 1.0 6.0 1.5 12.0 0.07 1100 500 170 VDS = 10V f = 1.0MHz VGS = 0V ID = 8A VDD 30V RL = 3.75Ω VGS = 5V RG = 50Ω 0.08 50 250 250 180 1.0 ISD = 10A, VGS = 0V V µA µA V S Ω pF pF pF ns ns ns ns V ±100 100 2.0 1.5 Ellipse 3.2±0.15 • 3.8 31.0±0.2 3.2±0.15 24.4±0.2 16.4 4.8±0.2 1.7±0.1 ±0.2 Lead plate thickness resins 0.8max 250 2.08 Test Conditions 8.5max EAS*2 Symbol External Dimensions SLA (LF800) 16.0±0.2 60 (Tc=25ºC,4 circuits operate) (Ta=25ºC) Ratings typ 13.0±0.2 5 (Ta=25ºC, 4 circuits operate) PT Unit V V A A W W 9.9±0.2 Ratings 60 ±20 ±12 ±48 a b 2.7 Symbol VDSS VGSS ID ID (pulse)*1 9.5min (10.4) Electrical Characteristics Absolute Maximum Ratings (Ta=25ºC) 12 Pin 1 0.85 1.2±0.15 +0.2 –0.1 0.55 1.45±0.15 2.2±0.7 +0.2 –0.1 11•P2.54±0.7 =27.94±1.0 31.5 max 1 2 3 4 5 6 7 8 9 10 11 12 a) Type No. b) Lot No. (Unit: mm) ■ ID — VDS Characteristics ■ ID — VGS Characteristics 10 ■ R DS (on) — I D Characteristics 12 0.1 VDS = 10V 10 VGS = 4V 4V 5V 10V RDS (on) (Ω) 8 8 ID (A) ID (A) 6 VGS = 3V 4 6 Ta = 150ºC 75ºC 25ºC –55ºC 4 2 0 0.05 VGS = 10V 2 0 1 2 3 4 5 0 6 0 1 2 VDS (V) 3 0 0.1 4 1 VGS (V) ■ Re (yfs) — I D Characteristics ■ R DS (on) — TC Characteristics 20 ■ I DR — VSD Characteristics 30 0.12 10 ID (A) 20 VDS = 10V VGS = 4V VGS = 0V 10 0.10 VGS = 10V 0.06 10 IDR (A) Re (yfs) (S) RDS (on) (Ω) 5 5 0.02 –50 0 50 100 0.5 2 0.4 150 1 5 ■ Capacitance — VDS Characteristics ne ED IT M =4 LI GS n) dV (o me DS su R As s VDS (V) 7 10 s ID (A) s 5m 1m 5 1 4 2 50 6 0m 10 3 1 10 Equivalent Circuit Diagram s ID (DC) max Crss 50 1.2 m Coss 10 Capacitance (pF) (Ta = 25ºC) 10 500 0.8 ID (pulse) max Ciss 5 0.4 0. VGS = 0V f = 1MHz 1 0 VSD (V) V li 50 100 0.1 20 ■ Safe Operating Area (single pulse) 2000 82 10 ID (A) Tc (ºC) 1000 1 0.5 0.5 1 5 10 VDS (V) 50 100 8 5 11 9 12