SANKEN 2SK3800

MOS FET 2SK3800
■ ID — VDS Characteristics (typ.)
VDS = 10V
f = 1.0MHz
VGS = 0V
ID = 35A
VDD = 20V, RG = 22Ω
RL = 0.57Ω, VGS = 10V
ISD = 50A, VGS = 0V
ISD = 25A, di/dt = 50A/µs
70
60
60
50
50
1.2
2.54±0.1
1
2
3
30
20
20
10
10
(VDS = 10V)
500
0.5
0
1.0
1.5
0
2.0
0
1.0
2.0
VDS (V)
Ta = 25ºC
VGS = 10V
ID = 70A
0.2
4.0
5.0
6.0
Tc = –55°C
25°C
150°C
35A
1
0
10
5
15
20
1
■
j-c
— t Characteristics (Single pulse)
(ID = 35A)
30
2.0
15
VDS
8.0
6.0
4.0
20
1
10
VDS (V)
3.0
70
■ Dynamic I/O Characteristics (typ.)
10
j-c (ºC/W)
4.0
10
ID (A)
10.0
5.0
VGS
VDD = 8V
12V
14V
16V
24V
10
0.1
5
2.0
0
10
20
30
40
50
60
0
–60 –50
70
0
ID (A)
50
100
150
(Ta = 25ºC)
50000
0.01
0.00001 0.0001 0.001 0.01
Tc (ºC)
PT
N)
IC (A)
IDR (A)
IT
M
50
40
Ta = 150°C
25°C
–55°C
Coss
20
S
10
PT
ED
Ciss
1000
100
LI
PT
(O
RD
PT
=1
=1
30
VDS (V)
40
50
0
150
70
00
µs
=1
60
m
0m
s
s
50
40
30
1
20
10
0
20
100
80
0µ
s
10
10
50
90
=1
Crss
0
0
(Ta = 25ºC)
100
30
10
Qg (nC)
500
60
10000
1
■ Safe Operating Area (single pulse) ■ PD — TC Characteristics
70
VGS = 0V
f = 1MHz
0
0.1
t (s)
■ Capacitance — VDS Characteristics (typ.) ■ IDR — VSD Characteristics (typ.)
100
10
VGS (V)
ID = 35A
VGS = 10V
12.0
1.0
Capacitance (pF)
0
7.0
■ RDS (ON) — TC Characteristics (typ.)
RDS (ON) (mΩ)
RDS (ON) (mΩ)
6.0
0
0.4
VGS (V)
■ RDS (ON) — I D Characteristics (typ.)
7.0
3.0
0.6
PD (W)
0
Ta = 150°C
25°C
–55°C
Details of the back (S=2/1)
■ Re (yfs) — ID Characteristics (typ.)
(Ta = 25ºC)
Re (yfs) (S)
VGS = 4.5V
(5.4)
(Unit: mm)
100
40
±0.1
0.4
2.54±0.1
10.2±0.3
1.0
VDS (V)
30
ID (A)
ID (A)
10V
5.5V
5.0V
+0.2
0.1 –0.1
+0.3
+0.2
0.86 –0.1
0.8
40
2.6±0.2
1.2±0.2
■ VDS — VGS Characteristics (typ.)
(VDS = 10V)
1.3±0.2
3 –0.5
6.0
1.56
62.5
■ ID — VGS Characteristics (typ.)
70
±10
100
4.0
3.0
50
5.0
5100
1200
860
100
100
300
130
0.9
110
2.0
30
(5)
V
µA
µA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
V
ns
ºC/W
ºC/W
4.44±0.2
(1.4)
40
+0.3
ID = 100µA, VGS = 0V
VGS = ±15V
VDS = 40V, VGS = 0V
VDS = 10V, ID = 1mA
VDS = 10V, ID = 35A
VGS = 10V, ID = 35A
Unit
max
VGS (V)
RG = 50Ω
V(BR) DSS
IGSS
IDSS
VTH
Re (yfs)
RDS (ON)
Ciss
Coss
Crss
t d (on)
tr
t d (off)
tf
VSD
t rr
R th (ch-c)
R th (ch-a)
min
1.4±0.2
* 1: PW 100µs, duty cycle 1%
* 2: VDD = 20V, L = 1mH, IL = 20A, unclamped,
Test Conditions
(1.3)
80 (Tc=25ºC)
400
150
–40 to +150
Symbol
External Dimensions TO220S
(Ta=25ºC)
Ratings
typ
9.1±0.3
Electrical Characteristics
Unit
V
V
A
A
W
mJ
ºC
ºC
10.5 –0.5
Ratings
40
±20
±70
±140
(1.5)
Symbol
VDSS
VGSS
ID
ID (pulse)*1
PD
EAS*2
Tch
Tstg
(0.45)
Absolute Maximum Ratings (Ta=25ºC)
0
0.2
0.4
0.6
0.8
VSD (V)
1.0
1.2
1.4
0.1
0.1
0
1
10
VDS (V)
100
0
20
40
60
80 100 120 140 160
Tc (ºC)
111