SMA5103 N-channel + P-channel H-bridge External dimensions B Absolute maximum ratings (Ta=25°C) Ratings Symbol Unit N channel P channel VDSS 60 –60 V VGSS ±20 20 V ID ±5 4 A ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A EAS* 2 — mJ 4 (Ta=25°C, with all circuits operating, without heatsink) PT ••• W 28 (Tc=25°C,with all circuits operating, with infinite heatsink) W θ j–a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j–c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Tch 150 °C Tstg –40 to +150 °C * : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15. ■Equivalent circuit diagram 10 7 Pch 12 8 11 2 Nch 9 4 5 1 6 3 Characteristic curves ID-VDS Characteristics (Typical) N-ch ID-VGS Characteristics (Typical) P-ch –8 10 10V N-ch 10 (VDS=10V) –10V 7V 8 8 6V –7V ID (A) 6 ID (A) ID (A) –6 –4 6 4 4 TC=–40°C –6V 25°C –2 2 2 VGS=–4V 125°C –5V VGS=4V 0 0 0 2 4 6 8 0 10 –2 –4 –6 –8 0 –10 0 2 VDS (V) VDS (V) 6 4 8 VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch P-ch (VGS=10V) 0.20 0.6 P-ch (VGS=–10V) (VDS=–10V) –8 TC=–40°C 25°C 0.5 0.4 ID (A) (Ω) (ON) (Ω) 0.3 RDS 0.10 RDS (ON) 125°C –6 0.15 –4 0.2 –2 0.05 0.1 0 0 2 4 6 8 0 10 0 –2 ID (A) –4 –6 –8 ID (A) 0.3 ID=5A VGS=10V P-ch 1.0 ID=–4A VGS=–10V (Ω) (ON) RDS RDS (ON) (Ω) 0.8 0.2 0.6 0.4 0.1 0.2 0 –40 0 50 TC (°C) 100 100 150 0 –40 0 50 TC (°C) –2 –4 –6 VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 00 100 150 –8 –10 SMA SMA5103 Electrical characteristics (Ta=25°C) N channel Symbol Specification min V(BR)DSS typ max 60 P channel Specification Unit Conditions V ID=250µA, VGS=0V min ±500 nA VGS=±20V IDSS 250 µA VDS=60V, VGS=0V 4.0 V VDS=10V, ID=250µA –2.0 S VDS=10V, ID=5A 1.6 VTH 2.0 2.2 3.3 max Unit Conditions V ID=–250µA, VGS=0V –60 IGSS Re(yfs) typ 500 nA VGS= 20V –250 µA VDS=–60V, VGS=0V V VDS=–10V, ID=–250µA S VDS=–10V, ID=–4A –4.0 2.2 RDS(ON) 0.17 Ω VGS=10V, ID=5A 0.38 Ω VGS=–10V, ID=–4A Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz, Coss 160 pF VGS=0V 170 pF VGS=0V ton 35 ns ID=5A, VDD 30V, VGS=10V, 60 ns ID=–4A, VDD –30V, VGS=–10V, ns see Fig. 3 on page 16. 60 V ISD=5A, VGS=0V –4.4 ns ISD=±100mA 150 toff 35 VSD 1.1 trr 140 0.22 1.5 0.55 ns see Fig. 4 on page 16. V ISD=–4A, VGS=0V ns ISD= 100mA –5.5 Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10 Safe Operating Area (SOA) P-ch (VDS=10V) N-ch (VDS=–10V) 5 (TC=25°C) 20 10 ID (pulse) max 0µ 10 ED 5 10 IT 5 M LI s m s (1 Re(yfs) (S) ) sh TC=–40°C 1 ID (A) Re (yfs) (S) N 1 S R s 1m (O ot ) D 1 TC=–40°C 25°C 0.5 25°C 125°C 125°C 0.5 0.5 0.3 0.08 0.5 5 1 0.3 –0.1 10 –0.5 –5 –1 0.1 0.5 –8 1 5 ID (A) 10 50 100 VDS (V) ID (A) Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz N-ch 1000 VGS=0V f=1MHz P-ch 700 P-ch ID (pulse) max 10 –5 IT LI M S RD ID (A) t) 50 o sh (O N) (1 Capacitance (pF) s 50 Coss 100 s m Coss 100 0µ 10 Ciss s ED Ciss 1m 500 Capacitance (pF) (TC=25°C) –10 500 –1 –0.5 Crss Crss 10 10 0 10 20 30 40 50 0 –10 –20 VDS (V) –30 –40 –50 –0.1 –0.5 –1 –5 VDS (V) –10 –50 –100 VDS (V) IDR-VSD Characteristics (Typical) PT-Ta Characteristics N-ch P-ch 10 –8 30 With Silicone Grease Natural Cooling All Circuits Operating 25 8 –6 ite He PT (W) 15 fin IDR (A) In –4 ith 10V W IDR (A) 20 –10V 6 sin at 4 VGS=0V –5V –2 5 Without Heatsink VGS=0V 0 0 1.0 0.5 VSD (V) 1.5 0 k 10 5V 2 0 0 –1 –2 VSD (V) –3 –4 –5 0 50 100 150 Ta (°C) 101