SMA5114 N-channel With built-in flywheel diode Absolute maximum ratings Ratings Unit Symbol VDSS VGSS ID 60 ±20 ±3 ±6 (PW≤1ms, Du≤1%) 6.8 3 V V A A mJ A W W °C/W °C/W °C °C V(BR)DSS IGSS IDSS VTH Re(yfs) 4 (Ta=25°C, with all circuits operating, without heatsink) 28 ((Tc=25°C,with all circuits operating, with infinite heatsink) 31.2 (Junction-Air, Ta=25°C, with all circuits operating) 4.46 (Junction-Case, Tc=25°C, with all circuits operating) 150 –40 to +150 PT θ j–a θ j–c Tch Tstg Ciss Coss Crss td(on) tr td(off) tf VSD trr ■Equivalent circuit diagram 3 4 9 10 11 5 12 8 6 Unit Conditions V µA µA V S Ω Ω pF pF pF ns ns ns ns V ns ID=100µA, VGS=0V VGS=±20V VDS=60V, VGS=0V VDS=10V, ID=250µA VDS=10V, ID=1.0A VGS=10V, ID=1.0A VGS=4V, ID=1.0A VDS=10V, f=1.0MHz, VGS=0V ID=1A, VDD 30V, RL=30Ω, VGS=5V, see Fig. 3 on page 16. ISD=3A, VGS=0V ISD=±100mA ●Diode for flyback voltage absorption Symbol 1 SMA (Ta=25°C) Specification min typ max 60 ±10 100 1.0 2.5 1.0 2.3 0.20 0.25 0.25 0.30 170 130 20 80 170 330 150 1.0 1.5 80 RDS(ON) * : VDD=20V, L=1mH, IL=3A, unclamped, see Fig. E on page 15. 2 ••• Electrical characteristics (Ta=25°C) Symbol ID(pulse) EAS* IAS External dimensions B VR VF IR trr 7 Specification typ max min 120 1.0 1.2 10 100 Unit Conditions V V µA ns IR=10µA IF=1A VR=120V IF=±100mA Characteristic curves ID-VDS Characteristics (Typical) ID-VGS Characteristics (Typical) RDS(ON)-ID Characteristics (Typical) (VDS=10V) 3 0.5 3 10V 3.4V 0.4 2 RDS 25°C 3V 1 TC=– 125 °C VGS=2.8V 2 4 6 8 0 0 10 1 VDS (V) Re(yfs)-ID Characteristics (Typical) 2 0.1 3 4 VGS=0V f=1MHz 500 Ciss Capacitance (pF) 0.4 (Ω) S= VG 0.3 (ON) RDS 25°C 1 10V 0.2 100 Coss 50 10 125°C 5 0.5 0.1 0.1 0.5 1 Crss 0 –40 3 0 100 50 TC (°C) IDR-VSD Characteristics (Typical) Safe Operating Area (SOA) ID (pulse) max 30 With Silicone Grease Natural Cooling All Circuits Operating 25 1m s 10 m s 20 (1 sh ) 1 15 ite fin sin 5V at He 0.5 In PT (W) ot 5 Without Heatsink 0.1 1.0 VSD (V) 1.5 0.05 0.5 k 10 0.5 50 ith ID (A) 40 W VGS=0V 30 PT-Ta Characteristics 0µ s RDS (ON) LIMITED IDR (A) 20 10 5 2 10 VDS (V) (TC=25°C) 10 3 1 0 150 ID (A) 0 0 3 Capacitance-VDS Characteristics (Typical) (ID=1A) TC=–40°C 1 2 RDS(ON)-TC Characteristics (Typical) 4V 0.2 0.05 1 ID (A) 0.5 5 Re (yfs) (S) 0 0 5 VGS (V) (VDS=10V) 10 10V 0.2 40°C 1 0 0 VGS=4V 0.3 (ON) ID (A) ID (A) (W) 2 3.2V 1 5 10 VDS (V) 50 100 0 0 50 100 150 Ta (°C) 107