SMA5104 N-channel + P-channel 3-phase motor drive External dimensions B Absolute maximum ratings (Ta=25°C) Ratings Symbol Unit N channel P channel VDSS 60 –60 V VGSS ±20 20 V ID ±5 4 A ID(pulse) ±10 (PW≤1ms) 8 (PW≤1ms) A EAS* 2 — mJ 4 (Ta=25°C, with all circuits operating, without heatsink) PT ••• W 28 (Tc=25°C,with all circuits operating, with infinite heatsink) W θ j-a 31.2 (Junction-Air, Ta=25°C, with all circuits operating) °C/W θ j-c 4.46 (Junction-Case, Tc=25°C, with all circuits operating) °C/W Tch 150 °C Tstg –40 to +150 °C * : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15. ■Equivalent circuit diagram 1 Pch 2 8 9 3 Nch 4 7 6 10 11 5 12 Characteristic curves ID-VDS Characteristics (Typical) N-ch 10 ID-VGS Characteristics (Typical) P-ch –8 N-ch (VDS=10V) 10 –10V 7V 10V 8 8 6V –7V ID (A) 6 ID (A) ID (A) –6 –4 4 6 4 TC=–40°C –6V 5V 25°C –2 2 VGS=–4V 125°C 2 –5V VGS=4V 0 –0 0 2 4 6 8 10 0 –2 –4 –6 –8 0 –10 0 2 6 4 VDS (V) VDS (V) 8 VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch P-ch (VGS=10V) 0.20 0.6 P-ch (VGS=–10V) (VDS=–10V) –8 TC=–40°C 0.5 25°C 0.15 RDS 0.4 ID (A) (Ω) (ON) (Ω) 0.10 RDS (ON) 125°C –6 0.3 –4 0.2 –2 0.05 0.1 0 0 2 4 6 8 0 10 –0 0 –2 ID (A) –4 –6 –8 RDS(ON)-TC Characteristics (Typical) N-ch 0.3 P-ch ID=5A VGS=10V 1.0 ID=–4A VGS=–10V (Ω) (ON) RDS RDS (ON) (Ω) 0.8 0.2 0.6 0.4 0.1 0.2 0 –40 0 50 TC (°C) 102 100 150 0 –40 0 50 TC (°C) 0 –2 –4 –6 VGS (V) ID (A) 100 150 –8 –10 SMA SMA5104 Electrical characteristics (Ta=25°C) N channel Symbol Specification min V(BR)DSS typ max 60 P channel Specification Unit Conditions V ID=250µA, VGS=0V min ±500 nA VGS=±20V IDSS 250 µA VDS=60V, VGS=0V 4.0 V VDS=10V, ID=250µA –2.0 S VDS=10V, ID=5A 1.6 VTH 2.0 2.2 3.3 max Unit Conditions V ID=–250µA, VGS=0V –60 IGSS Re(yfs) typ 500 nA VGS= 20V –250 µA VDS=–60V, VGS=0V V VDS=–10V, ID=–250µA S VDS=–10V, ID=–4A –4.0 2.2 RDS(ON) 0.17 Ω VGS=10V, ID=5A 0.38 Ω VGS=–10V, ID=–4A Ciss 300 pF VDS=25V, f=1.0MHz, 270 pF VDS=–25V, f=1.0MHz, Coss 160 pF VGS=0V 170 pF VGS=0V ton 35 ns ID=5A, VDD 30V, VGS=10V, 60 ns ID=–4A, VDD –30V, VGS=–10V, ns see Fig. 3 on page 16. 60 ns see Fig. 4 on page 16. V ISD=5A, VGS=0V –4.4 V ISD=–4A, VGS=0V ns ISD=±100mA 150 ns ISD= 100mA toff 35 VSD 1.1 trr 140 0.22 1.5 0.55 –5.5 Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 10 Safe Operating Area (SOA) P-ch (VDS=10V) N-ch (VDS=–10V) 5 (TC=25°C) 20 10 ID (pulse) max 0µ s 10 5 ED Re (yfs) (S) 5 10 IT M LI 1m m s TC=–40°C N 1 R ID (A) Re (yfs) (S) ) 1 s TC=–40°C S (1 sh (O ot ) D 1 25°C 25°C 0.5 125°C 125°C 0.5 0.5 0.3 0.08 0.5 1 5 0.3 –0.1 10 –0.5 –1 ID (A) –5 0.1 0.5 –8 1 5 ID (A) 10 50 100 VDS (V) Capacitance-VDS Characteristics (Typical) VGS=0V f=1MHz N-ch 1000 VGS=0V f=1MHz P-ch 700 P-ch ID (pulse) max 500 ED IT LI M RD ) 50 S ID (A) (O t ho N) s (1 Capacitance (pF) s Capacitance (pF) m 10 50 Coss 100 0µ s s Ciss Coss 10 1m –5 Ciss 100 (TC=25°C) –10 500 –1 –0.5 Crss Crss 10 10 0 10 20 30 40 50 0 –10 –20 –30 –40 –50 –0.1 –0.5 –1 –5 VDS (V) VDS (V) –10 –50 –100 VDS (V) IDR-VSD Characteristics (Typical) PT-Ta Characteristics N-ch P-ch 30 –8 10 With Silicone Grease Natural Cooling All Circuits Operating 25 8 –6 ite PT (W) 15 in IDR (A) –4 f In 10V ith W IDR (A) 20 –10V 6 He sin at 4 5 Without Heatsink VGS=0V 0 0 0 0.5 1.0 VSD (V) 1.5 k 10 –5V –2 VGS=0V 5V 2 0 –1 –2 –3 VSD (V) –4 –5 0 0 50 100 150 Ta (°C) 103