SANKEN SMA5104

SMA5104
N-channel + P-channel
3-phase motor drive
External dimensions B
Absolute maximum ratings
(Ta=25°C)
Ratings
Symbol
Unit
N channel
P channel
VDSS
60
–60
V
VGSS
±20
20
V
ID
±5
4
A
ID(pulse)
±10 (PW≤1ms)
8 (PW≤1ms)
A
EAS*
2
—
mJ
4 (Ta=25°C, with all circuits operating, without heatsink)
PT
•••
W
28 (Tc=25°C,with all circuits operating, with infinite heatsink)
W
θ j-a
31.2 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
4.46 (Junction-Case, Tc=25°C, with all circuits operating)
°C/W
Tch
150
°C
Tstg
–40 to +150
°C
* : VDD=20V, L=1mH, ID=2A, unclamped, see Fig. E on page 15.
■Equivalent circuit diagram
1
Pch 2
8
9
3
Nch 4
7
6
10
11
5
12
Characteristic curves
ID-VDS Characteristics (Typical)
N-ch
10
ID-VGS Characteristics (Typical)
P-ch
–8
N-ch
(VDS=10V)
10
–10V
7V
10V
8
8
6V
–7V
ID (A)
6
ID (A)
ID (A)
–6
–4
4
6
4
TC=–40°C
–6V
5V
25°C
–2
2
VGS=–4V
125°C
2
–5V
VGS=4V
0
–0
0
2
4
6
8
10
0
–2
–4
–6
–8
0
–10
0
2
6
4
VDS (V)
VDS (V)
8
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(VGS=10V)
0.20
0.6
P-ch
(VGS=–10V)
(VDS=–10V)
–8
TC=–40°C
0.5
25°C
0.15
RDS
0.4
ID (A)
(Ω)
(ON)
(Ω)
0.10
RDS
(ON)
125°C
–6
0.3
–4
0.2
–2
0.05
0.1
0
0
2
4
6
8
0
10
–0
0
–2
ID (A)
–4
–6
–8
RDS(ON)-TC Characteristics (Typical)
N-ch
0.3
P-ch
ID=5A
VGS=10V
1.0
ID=–4A
VGS=–10V
(Ω)
(ON)
RDS
RDS
(ON)
(Ω)
0.8
0.2
0.6
0.4
0.1
0.2
0
–40
0
50
TC (°C)
102
100
150
0
–40
0
50
TC (°C)
0
–2
–4
–6
VGS (V)
ID (A)
100
150
–8
–10
SMA
SMA5104
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specification
min
V(BR)DSS
typ
max
60
P channel
Specification
Unit
Conditions
V
ID=250µA, VGS=0V
min
±500
nA
VGS=±20V
IDSS
250
µA
VDS=60V, VGS=0V
4.0
V
VDS=10V, ID=250µA
–2.0
S
VDS=10V, ID=5A
1.6
VTH
2.0
2.2
3.3
max
Unit
Conditions
V
ID=–250µA, VGS=0V
–60
IGSS
Re(yfs)
typ
500
nA
VGS= 20V
–250
µA
VDS=–60V, VGS=0V
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–4A
–4.0
2.2
RDS(ON)
0.17
Ω
VGS=10V, ID=5A
0.38
Ω
VGS=–10V, ID=–4A
Ciss
300
pF
VDS=25V, f=1.0MHz,
270
pF
VDS=–25V, f=1.0MHz,
Coss
160
pF
VGS=0V
170
pF
VGS=0V
ton
35
ns
ID=5A, VDD 30V, VGS=10V,
60
ns
ID=–4A, VDD –30V, VGS=–10V,
ns
see Fig. 3 on page 16.
60
ns
see Fig. 4 on page 16.
V
ISD=5A, VGS=0V
–4.4
V
ISD=–4A, VGS=0V
ns
ISD=±100mA
150
ns
ISD= 100mA
toff
35
VSD
1.1
trr
140
0.22
1.5
0.55
–5.5
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
10
Safe Operating Area (SOA)
P-ch
(VDS=10V)
N-ch
(VDS=–10V)
5
(TC=25°C)
20
10
ID (pulse) max
0µ
s
10
5
ED
Re (yfs) (S)
5
10
IT
M
LI
1m
m
s
TC=–40°C
N
1
R
ID (A)
Re (yfs) (S)
)
1
s
TC=–40°C
S
(1
sh
(O
ot
)
D
1
25°C
25°C
0.5
125°C
125°C
0.5
0.5
0.3
0.08
0.5
1
5
0.3
–0.1
10
–0.5
–1
ID (A)
–5
0.1
0.5
–8
1
5
ID (A)
10
50
100
VDS (V)
Capacitance-VDS Characteristics (Typical)
VGS=0V
f=1MHz
N-ch
1000
VGS=0V
f=1MHz
P-ch
700
P-ch
ID (pulse) max
500
ED
IT
LI
M
RD
)
50
S
ID (A)
(O
t
ho
N)
s
(1
Capacitance (pF)
s
Capacitance (pF)
m
10
50
Coss
100
0µ
s
s
Ciss
Coss
10
1m
–5
Ciss
100
(TC=25°C)
–10
500
–1
–0.5
Crss
Crss
10
10
0
10
20
30
40
50
0
–10
–20
–30
–40
–50
–0.1
–0.5
–1
–5
VDS (V)
VDS (V)
–10
–50 –100
VDS (V)
IDR-VSD Characteristics (Typical)
PT-Ta Characteristics
N-ch
P-ch
30
–8
10
With Silicone Grease
Natural Cooling
All Circuits Operating
25
8
–6
ite
PT (W)
15
in
IDR (A)
–4
f
In
10V
ith
W
IDR (A)
20
–10V
6
He
sin
at
4
5 Without Heatsink
VGS=0V
0
0
0
0.5
1.0
VSD (V)
1.5
k
10
–5V
–2
VGS=0V
5V
2
0
–1
–2
–3
VSD (V)
–4
–5
0
0
50
100
150
Ta (°C)
103