SANKEN SLA5060

SLA5060
N-channel + P-channel
3-phase motor drive
External dimensions A
Absolute maximum ratings
SLA (12-pin)
(Ta=25°C)
Ratings
Symbol
N channel
P channel
Unit
VDSS
60
–60
V
VGSS
±20
±20
V
ID
6
–6
A
ID(pulse)
10 (PW≤1ms, duty≤25%)
–10 (PW≤1ms, duty≤25%)
A
,
W
5 (Ta=25°C, with all circuits operating, without heatsink)
PT
•••
35 (Tc=25°C, with all circuits operating, with infinite heatsink)
W
θ j-a
25 (Junction-Air, Ta=25°C, with all circuits operating)
°C/W
θ j-c
3.57 (Junction-Case, Tc=25°C, with all circuits operating)
°C/W
VISO
1000 (Between fin and lead pin, AC)
Vrms
Tch
150
°C
Tstg
–40 to +150
°C
■Equivalent circuit diagram
1
2
8
9
3
7
4
10
6
11
5
12
Characteristic curves
ID-VDS Characteristics (Typical)
(Ta=25°C)
ID-VGS Characteristics (Typical)
P-ch
---8
10V
8
–10V
3.7V
(Ta=25°C)
–4 V
4V
---10
8
4
3.0V
–3.5V
---6
6
ID (A)
ID (A)
3.3V
(VDS=10V)
–3.7V
3.5V
6
N-ch
10
–3.3V
---4
ID (A)
N-ch
10
Ta=125°C
4
–3.0V
25°C
2.7V
2
---2
0
VGS=–2.5V
0
0
2
4
6
8
–40°C
2
–2.7V
VGS=2.5V
10
0
---2
---4
---6
---8
0
---10
0
1
2
VDS (V)
VDS (V)
3
4
5
VGS (V)
RDS(ON)-ID Characteristics (Typical)
N-ch
P-ch
(Ta=25°C)
0.30
(Ta=25°C)
0.30
P-ch
---10
(VDS=---10V)
---9
0.25
4V
0.15
VGS=10V
---8
---7
VGS=–4V
0.20
---6
0.15
ID (A)
RDS (ON) (Ω)
0.20
RDS
(ON) (Ω)
0.25
–10V
---5
Ta=–40°C
---4
0.10
0.10
0.05
0.05
---3
25°C
---2
–40°C
---1
0
0
0
0
1
2
3
4
5
6
7
8
9
0
10
---2
---4
ID (A)
---6
---8
---10
RDS(ON)-TC Characteristics (Typical)
(ID=3A)
N-ch
0.35
0.30
V
=
GS
1
RDS (ON) (Ω)
RDS (ON) (Ω)
0.25
4V
0.20
0V
0.15
V
–4
S=
V
–10
0.15
0.10
0.05
0.05
0
50
100
150
VG
0.20
0.10
TC (°C)
84
(ID=---3A)
0.30
0.25
0
---40
P-ch
0.35
0
---40
0
50
TC (°C)
0
---1
---2
---3
VGS (V)
ID (A)
100
150
---4
---5
SLA5060
Electrical characteristics
(Ta=25°C)
N channel
Symbol
Specification
min
V(BR)DSS
typ
max
IDSS
VTH
Re(yfs)
Conditions
Specification
min
V
ID=100µA, VGS=0V
µA
VGS=±20V
100
µA
VDS=60V, VGS=0V
2.0
V
VDS=10V, ID=250µA
S
VDS=10V, ID=3A
0.22
Ω
VGS=4V, ID=3A
1.0
5.5
RDS(ON)
Unit
±10
60
IGSS
P channel
Ciss
320
pF
Coss
160
pF
Crss
35
pF
td(on)
16
ns
tr
65
ns
td(off)
70
ns
tf
45
ns
VSD
1.2
V
trr
65
ns
typ
max
Unit
Conditions
V
ID=–100µA, VGS=0V
±10
µA
VGS=±20V
–100
µA
VDS=–60V, VGS=0V
–2.0
V
VDS=–10V, ID=–250µA
S
VDS=–10V, ID=–3A
0.22
Ω
VGS=–10V, ID=–3A
–60
–1.0
6
VDS=10V, f=1.0MHz,
VGS=0V
ID=3A, VDD=20V,
RL=6.67Ω, VGS=5V,
see Fig. 3 on page 16.
ISD=6A, VGS=0V
ISD=3A, VGS=0V,
di/dt=100A/µs
790
pF
310
pF
90
pF
40
ns
110
ns
160
ns
80
ns
–1.1
V
85
ns
VDS=–10V, f=1.0MHz,
VGS=0V
ID=–3A, VDD=20V,
RL=6.67Ω, VGS=–5V,
see Fig. 4 on page 16.
ISD=–6A, VGS=0V
ISD=–3A, VGS=0V,
di/dt=100A/µs
Characteristic curves
Re(yfs)-ID Characteristics (Typical)
N-ch
10
(VDS=10V)
Safe Operating Area (SOA)
P-ch
10
TC=25°C
SINGLE PULSE
N-ch
(VDS=---10V)
20
s
0µ
10
Ta=–40°C
10
0.1
1
IT
M
LI
N)
ID (A)
(O
S
RD
Re (yfs) (S)
Re (yfs) (S)
0.1
–0.05 –0.1
10
s
0.1
0.05
125°C
s
m
125°C
25°C
1
10
25°C
1
1m
ED
Ta=–40°C
1
–1
0.1
0.1
–10
1
ID (A)
ID (A)
10
Capacitance-VDS Characteristics (Typical)
VGS=0V
N-ch
2000
VGS=0V
P-ch
N-ch(Ta=25°C) f=1MHz
P-ch
(Ta=25°C) f=1MHz
2000
100
VDS (V)
1000
TC=25°C
SINGLE PULSE
P-ch
–20
100µs
–10
10
Coss
100
ED
IT
M
LI
(O
S
RD
Coss
N)
ID (A)
Capacitance (pF)
Ciss
s
–1
100
Crss
Crss
10
0
10
10
20
30
40
50
0
–10
–20
VDS (V)
–30
–40
–50
–0.1
–0.1
–1
IDR-VSD Characteristics (Typical)
(Ta=25°C)
–10
PT-Ta Characteristics
P-ch
---10
(Ta=25°C)
40
With Silicon Grease
Natural Cooling
All Circuits Operating
35
8
–100
VDS (V)
VDS (V)
N-ch
10
---8
PT (W)
–1
S=
IDR (A)
0V
0V
15
k
VG
in
ts
---2
20
ea
2
V
–4
H
---4
ite
4
fin
0V
S=
25
---6
In
VG
4V
ith
6
W
–1
0V
30
IDR (A)
Capacitance (pF)
m
1000
s
1m
Ciss
10
Without Heatsink
5
0
0
0.5
1.0
VSD (V)
1.5
0
0
0
---0.5
---1.0
VSD (V)
---1.5
0
50
100
150
Ta (°C)
85