DIODE MODULE DD200GB UL;E76102 （M） Power Diode Module DD200GB series are designed for various rectifier circuits. DD200GB has two diode two diode chips connecected in series and the mounting base is electrically isolated from elements for simple heatsink construction. Wide voltage rating up to 800V is available for various input voltages. 92±0.5 12 26 26 4-φ6（M5） mounting base elements in a package for simple（single and three phase）bridge connections ● Highly reliable glass passivated chips ● High surge current capability 60±0.5 48±0.3 24 ● Isolated ● Two 18 2 R8.0 M8×14 5 2 42max 34max （Applications） Various rectifiers, Battery chargers, DC motor drives DD 80±0.3 １ ２ ３ ■Maximum Ratings （Tj＝25℃ unless otherwise specified） Ratings Item Symbol Unit：㎜ DD200GB40 DD200GB80 Unit VRRM Repetitive Peak Reverse Voltage 400 800 V VRSM Non-Repetitive Peak Reverse Voltage 480 960 V Symbol IF（AV） Item Conditions Ratings Average Forward Current Single phase, half wave, 180℃conduction, Tc: 96℃ IF（RMS） R.M.S. Forward Current Single phase, half wave, 180℃conduction, Tc: 96℃ IFSM Surge Forward Current 1 ／ It It Value for one cycle of surge current Tj 2 cycle, 50/60HZ, peak value, non-repetitive Unit 200 A 310 A A 5000/5500 125000 A2S Operating Junction Temperature −40 to ＋150 ℃ Tstg Storage Temperature −40 to ＋125 ℃ VISO Isolation Breakdown Voltage（R.M.S.） A.C. 1 minute 2500 V Mounting（M5） Recommended Value 1.5-2.5（15-25） 2.7（28） Terminal（M8） Recommended Value 8.8-10 （90-105） 2 2 Mounting Torque Mass Typical Value N･m 11（115） （㎏f･B） 510 ■Electrical Characteristics g （Tj＝25℃ unless otherwise specified） Symbol Item IRRM Repetitive Peak Reverse Current, max. at VRRM. Single phase, half wave, Tj＝150℃ VFM Forward Voltage Drop, max. Forward current 600A, Tj＝25℃, Inst measurement Junction to case （Per a half module） 0.18 ℃/W Rth（j-c） Thermal Impedance, max. SanRex Conditions Ratings Unit 50 mA 1.40 V ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected] DD200GB ５００ Average Forward Current vs. Power Dissipation Power Dissipation Pav（W） Forward Current I（A） F ２ Maximum Forward Characteristics １０３ D.C. ４００ ５ Single Phase ３００ Per one element ２ Tj＝25℃∼150℃ １０２ Three Phase ２００ ５ Per one element １００ ２ １０１ ０ １． ０ １． ５ ２． ５ ２． ０ ０ ０ ３． ０ ５０ Average Forward Current vs. Allowable Case Temperature ６０００ Surge Forward Current I（A） F Allowable Case Temperature Tc（℃） １５０ １４０ １３０ Per one element １２０ １１０ １００ ９０ ８０ ７０ Three Phase Single Phase D.C. ６０ ５０ ０ ５０ １００ １５０ ２００ ２５０ １００ １５０ Transient Thermal Impedance θj-c（℃/W） ２５０ ３００ ３５０ ３００ Cycle Surge Forward Current Rating （Non-Repetitive） Per one element ５０００ ４０００ 60Hz ３０００ 50Hz ２０００ Ｔ ｊ=２５℃ start １０００ ０ １００ ３５０ ２ １０１ ５ Average Forward Current I（A） F ０． ２ ２００ Average Forward Current I（A） F Forward Voltage Drop V（V） F ２ ５ １０２ Time（Cycles） Transient Thermal Impedance ０． １ Maximum Junction to Case Per one element ５ １００ ２ ５ １０１ B２；Two Pluse Bridge connection B2 ９０ Id（Aav.） １０００ １００ Rth （f-a） ：Thermal resistance between fin and ambient ８００ Rth:0.5C/W Rth:0.4C/W Rth:0.3C/W Rth:0.2C/W Rth:0.1C/W Rth:0.05C/W ６００ ４００ １１０ １２０ １３０ ２００ １４０ Conduction Angle１８０ ０ ０ １００ ２００ ３００ ４００ ０ １５０ ２５ ５０ ７５ １００ １２５ １５０ Output Current（A） Ambient Temperature（℃） １７５０ Output Current B６；Six pulse Bridge connection ８０ B6 ９０ １５００ Rth （f-a） ：Thermal resistance between fin and B6 ambient Id（Aav.） １２５０ Rth:0.5C/W Rth:0.4C/W Rth:0.3C/W Rth:0.2C/W Rth:0.1C/W Rth:0.05C/W １０００ ７５０ ５００ ２５０ １００ １１０ １２０ １３０ １４０ Conduction Angle１８０ ０ ０ ２５０ ５００ ０ １５０ ２５ ５０ ７５ １００ １２５ １５０ Allowable Case Temperature（℃） Output Current ５ １０-１ ２ Time t（sec） Total Power Dissipation（W） Total Power Dissipation（W） １２００ ５ １０-２ ２ Allowable Case Temperature（℃） ０ １０-３ ２ Output Current（A） Ambient Temperature（℃） SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: [email protected]