TetraFET D1022UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 100W – 28V – 500MHz PUSH–PULL A C B (2 pls) K 3 2 1 E D 5 4 G (4 pls) F FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J M I N • SUITABLE FOR BROAD BAND APPLICATIONS DK PIN 1 SOURCE (COMMON) PIN 2 DRAIN 1 • LOW Crss PIN 3 DRAIN 2 GATE 2 • SIMPLE BIAS CIRCUITS PIN 5 GATE 1 PIN 4 • LOW NOISE DIM A B C D E F G H I J K M N mm 6.45 1.65R 45° 16.51 6.47 18.41 1.52 4.82 24.76 1.52 0.81R 0.13 2.16 Tol. 0.13 0.13 5° 0.76 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 Inches 0.254 0.65R 45° 0.650 0.255 0.725 0.060 0.190 0.975 0.060 0.032R 0.005 0.085 Tol. 0.005 0.005 5° 0.03 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk 292W 70V ±20V 15A –65 to 150°C 200°C Prelim.11/00 D1022UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current ID = 100mA VDS = 28V VGS = 0 3 mA 1 mA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 3A ID = 10mA VDS = VGS VGS(th)match Gate Threshold Voltage Matching Between Sides V VGS = 0 70 1 mhos 2.4 0.1 V TOTAL DEVICE GPS h VSWR Common Source Power Gain PO = 100W Drain Efficiency VDS = 28V Load Mismatch Tolerance f = 500MHz IDQ = 1.2A 10 dB 50 % 20:1 — PER SIDE Ciss Input Capacitance VDS = 28V VGS = –5V f = 1MHz 180 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 90 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 7.5 pF * Pulse Test: Pulse Duration = 300 ms , Duty Cycle £ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Max. 0.6°C / W Prelim.11/00 D1022UK 3RXW : 9GV 9 ,GT $ I 0+] 3LQ: (IILFLHQF\ 3RXW : 9GV 9 ,GT $ I 0+] 3LQ: 3RXW 'UDLQ(IILFLHQF\ Figure 1 Power Output and Efficiency vs. Input *DLQ G% 3RXW *DLQ Figure 2 Power Output and Gain vs. Input Power OPTIMUM SOURCE AND LOAD IMPEDANCE Frequency MHz ZS ZL 500 2.0 - j2.2 2.6 - j0.6 W W N.B. Impedances measured terminal to terminal Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/00 D1022UK 1 5 + 2 8 V G a te -B ia s 4 7 0 u F 1 0 0 K 2 2 K D 1 0 2 2 U K T 4 T 2 1 0 p F 0 .8 -1 4 p F 4 7 p F 0 .8 -1 4 p F 1 0 p F T 5 0 .8 -1 4 p F 1 n F L 1 6 2 0 p F 6 L 2 5 x 5 m m c o n ta c t p a d 1 0 0 n F 5 x 5 m m c o n ta c t p a d 1 0 0 n F T 6 T 3 0 .8 -1 4 p F 5 x 5 m m c o n ta c t p a d 6 2 0 p F 5 x 5 m m c o n ta c t p a d 6 8 0 p F D 1 0 2 2 U K D1022UK 500MHz TEST FIXTURE T1, 6 7cm UT85 50 Ohm semi-rigid coax on Siemens B62152A1x1 2 hole ferrite core T2, 3,4, 5 7.7 cm UT85-15 15 ohm semi-rigid coax L1 6 turns 19swg enamelled copper wire, 3.5mm internal diameter L2 8.5 turns 19swg enamelled copper wire on Fair-rite FT82 ferrite core Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Prelim.11/00