TetraFET D1053UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 50W – 28V – 1GHz PUSH–PULL B B A A D E C (2 pls) 2 1 3 4 5 9 8 7 6 K O (2 pls) F G FEATURES • SIMPLIFIED AMPLIFIER DESIGN H J I M N • SUITABLE FOR BROAD BAND APPLICATIONS DB PIN 1 PIN 3 PIN 5 PIN 7 PIN 9 SOURCE (COMMON) DRAIN 2 DRAIN 4 GATE 3 GATE 1 DIM A B C D E F G H I J K M N O mm 1.52 1.52 45° 16.38 6.35 18.41 12.70 5.08 24.76 1.52 0.81R 0.13 2.16 1.65R PIN 2 PIN 4 PIN 6 PIN 8 Tol. 0.13 0.13 5° 0.26 0.13 0.13 0.26 0.13 0.13 0.13 0.13 0.02 0.13 0.13 DRAIN 1 DRAIN 3 GATE 4 GATE 2 • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE Inches 0.060 0.060 45° 0.645 0.250 0.725 0.500 0.200 0.975 0.060 0.032R 0.005 0.085 0.065R Tol. 0.005 0.005 5° 0.010 0.005 0.005 0.010 0.005 0.005 0.005 0.005 0.001 0.005 0.005 • HIGH GAIN – 7.5 dB MINIMUM APPLICATIONS • VHF/UHF COMMUNICATIONS from 400 MHz to 1 GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. 175W 70V ±20V 5A –65 to 150°C 200°C Prelim. 3/95 D1053UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 ID = 100mA VDS = 28V VGS = 0 1 mA 1 µA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 1A ID = 10mA VDS = VGS VGS(th)match Gate Threshold Voltage Matching Between Sides 70 1 V mhos 0.8 0.1 V TOTAL DEVICE GPS Common Source Power Gain PO = 50W η Drain Efficiency VDS = 28V VSWR Load Mismatch Tolerance f = 1GHz IDQ = 0.8A 7.5 dB 45 % 20:1 — PER SIDE Ciss Input Capacitance VDS = 0 VGS = –5V f = 1MHz 60 pF Coss Output Capacitance VDS = 28V VGS = 0 f = 1MHz 30 pF Crss Reverse Transfer Capacitance VDS = 28V VGS = 0 f = 1MHz 2.5 pF * Pulse Test: Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 1.0°C / W Prelim. 3/95