TetraFET D1207UK METAL GATE RF SILICON FET MECHANICAL DATA GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 20W – 12.5V – 1GHz PUSH–PULL B H C G 2 3 1 D A E 5 4 F FEATURES I • SIMPLIFIED AMPLIFIER DESIGN N M J O K • SUITABLE FOR BROAD BAND APPLICATIONS DQ PIN 1 PIN 3 PIN 5 SOURCE (COMMON) PIN 2 DRAIN 2 PIN 4 GATE 1 DRAIN 1 GATE 2 • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE DIM mm A 16.38 B 1.52 C 45° D 6.35 E 3.30 F 14.22 G 1.27 x 45° H 1.52 I 6.35 J 0.13 K 2.16 M 1.52 N 5.08 O 18.90 Tol. 0.26 0.13 5° 0.13 0.13 0.13 0.13 0.13 0.13 0.02 0.13 0.13 MAX 0.13 Inches 0.645 0.060 45° 0.250 0.130 0.560 0.05 x 45° 0.060 0.250 0.005 0.085 0.060 0.200 0.744 Tol. 0.010 0.005 5° 0.005 0.005 0.005 0.005 0.005 0.005 0.001 0.005 0.005 MAX 0.005 • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1 MHz to 500 MHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain – Source Breakdown Voltage * Gate – Source Breakdown Voltage * Drain Current * Storage Temperature Maximum Operating Junction Temperature 175W 40V ±20V 10A –65 to 150°C 200°C * Per Side Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 10/95 D1207UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 ID = 10mA VDS = 12.5V VGS = 0 1 mA 1 µA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS gfs Forward Transconductance* VDS = 10V ID = 1A 40 1 V 0.8 S 10 dB 50 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 20W η Drain Efficiency VDS = 12.5V VSWR Load Mismatch Tolerance f = 400MHz IDQ = 0.8A PER SIDE Ciss Input Capacitance VDS = 0 Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: 60 pF f = 1MHz 40 pF f = 1MHz 4 pF VGS = –5V f = 1MHz Pulse Duration = 300 µs , Duty Cycle ≤ 2% HAZARDOUS MATERIAL WARNING The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE. THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Max. 1.75°C / W Prelim. 10/95