TetraFET D2225UK ROHS COMPLIANT METAL GATE RF SILICON FET MECHANICAL DATA A D N 8 1 7 2 6 3 5 4 C B P GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 5W – 12.5V – 1GHz PUSH–PULL H K FEATURES M L J • SIMPLIFIED AMPLIFIER DESIGN E F G • SUITABLE FOR BROAD BAND APPLICATIONS SO8 PACKAGE PIN 1 – SOURCE PIN 2 – DRAIN 1 PIN 3 – DRAIN 2 PIN 4 – SOURCE PIN 5 – SOURCE PIN 6 – GATE 2 PIN 7 – GATE 1 PIN 8 – SOURCE Dim. A B C D E F G mm 4.06 5.08 1.27 0.51 3.56 4.06 1.65 H 0.76 J K L M N P 0.51 1.02 45° 0° 7° 0.20 2.18 4.57 Tol. ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 ±0.08 +0.25 -0.00 Min. Max. Max. Min. Max. ±0.08 Max. ±0.08 Inches 0.160 0.200 0.050 0.020 0.140 0.160 0.065 0.030 0.020 0.040 45° 0° 7° 0.008 0.086 0.180 Tol. ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 ±0.003 +0.010 -0.000 Min. Max. Max. Min. Max. ±0.003 Max. ±0.003 • VERY LOW Crss • SIMPLE BIAS CIRCUITS • LOW NOISE • HIGH GAIN – 10 dB MINIMUM APPLICATIONS • HF/VHF/UHF COMMUNICATIONS from 1MHz to 1GHz ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) PD BVDSS BVGSS ID(sat) Tstg Tj Semelab plc. Power Dissipation Drain – Source Breakdown Voltage Gate – Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] 17.5W 40V ±20V 4A –65 to 150°C 200°C Prelim. 2/99 D2225UK ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. Unit PER SIDE BVDSS IDSS Drain–Source Breakdown Voltage Zero Gate Voltage Drain Current 40 VGS = 0 ID = 10mA V VDS = 12.5V VGS = 0 1 mA 1 µA 7 V IGSS Gate Leakage Current VGS = 20V VDS = 0 VGS(th) Gate Threshold Voltage* ID = 10mA VDS = VGS 0.5 gfs Forward Transconductance* VDS = 10V ID = 0.2A 0.18 S 10 dB 40 % 20:1 — TOTAL DEVICE GPS Common Source Power Gain PO = 5W η Drain Efficiency VDS = 12.5V VSWR Load Mismatch Tolerance f = 1GHz IDQ = 0.2A PER SIDE Ciss Input Capacitance VDS = 0V Coss Output Capacitance VDS = 12.5V VGS = 0 Crss Reverse Transfer Capacitance VDS = 12.5V VGS = 0 * Pulse Test: 12 pF f = 1MHz 10 pF f = 1MHz 1 pF VGS = –5V f = 1MHz Pulse Duration = 300 µs , Duty Cycle ≤ 2% THERMAL DATA RTHj–case Semelab plc. Thermal Resistance Junction – Case Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612. Website http://www.semelab.co.uk E-mail: [email protected] Max. 6°C / W Prelim. 2/99