SHARP PT483F1

PT481/PT481F/PT483F1
PT481/PT481F/
PT483F1
Narrow Acceptance High
Sensitivity Phototransistor
■ Features
■ Outline Dimensions
2.95±0.2
2.15± 0.2
PT481F
2.54
0.8MAX.
0.8MAX.
4.0
R0.5
60˚
0.5MIN. 17.5 +1.5
-1.0
1.7
Mark
(black)
2 - 0.45
2 - 0.8
2 - 0.4
1.6
2
2.8
1. VCRs, cassette tape recorders
2. Floppy disk drives
3. Optoelectronic switches
4. Automatic stroboscopes
Epoxy
resin ❈
0.15
R0.8± 0.1
■ Applications
1.5
3.0
Detector center
1.15
0.75
0.3MAX.
2 - C0.5
( Unit : mm )
1
1 Emitter
2 Collector
2
❈ Epoxy resin
PT481
1.4
PT481/PT481F
Rest of
gate
1. Epoxy resin package
2. Narrow acceptance ( ∆ θ : Typ. ± 13˚ )
3. High sensitivity
( IC : MIN. 1.5mA at E e = 0.1mW/cm 2 ) :
PT481/PT483F1
( IC : MIN. 0.9mA at E e = 0.1mW/cm 2 ) :
PT481F
4. Visible light cut-off type : PT481F/PT483F1
5. Long lead pin type : PT483F1
1
Light blue transparent resin
Visible light cut-off resin ( black )
PT481F
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
50
75
- 25 to +85
- 40 to +85
260
*1 For 3 seconds at the position of 1.4mm from the
bottom face of resin package
Unit
V
V
mA
mW
˚C
˚C
˚C
0.15
60˚
1.4
R0.5
4.0
2.54
0.5MIN.
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
2.95± 0.2
2.15± 0.2
2 - 0.6
( Ta = 25˚C )
Epoxy
resin ❈
3.0
1.7
Mark
(black)
0.8MAX.
18.5
40.0
R0.8±0.1
■ Absolute Maximum Ratings
Detector center
1.15
0.75
0.8MAX.
3.0
0.3MAX.
Rest of
gate
2 - C0.5
1.5
PT483F1
2 - 0.4
2 - 0.45
2 - 0.8
1.6
2
2.8
1
2
1 Emitter
2 Collector
1
❈ Visible light cut-off resin ( black )
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
PT481/PT481F/PT483F1
■ Electro-optical Characteristics
( Ta = 25˚C )
Parameter
PT481
*2
Collector
PT481F
current
PT483F1
Collector dark current
Symbol
*2
V CE(sat)
Collector-emitter saturation voltage
PT481
PT481F/PT483F1
Rise time
Fall time
Peak emission
wavelength
Response time
IC
I CEO
λp
tr
tf
Conditions
V CE = 2V
E e = 0.1mW/cm 2
V CE = 10V, E e = 0
I c = 2.5mA
E e = 1mW/cm 2
VCE = 2V, I C = 10mA
R L = 100Ω
MIN.
1.5
0.9
1.5
-
TYP.
10
-
MAX.
25
27
4.0
10- 6
Unit
mA
mA
mA
A
-
0.7
1.0
V
-
800
860
80
70
-
nm
nm
µs
µs
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp )
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10 - 4
5
70
10 - 5
(A)
80
CEO
60
50
40
30
20
= 10V
10 - 6
5
10 - 7
5
10 - 8
5
10 - 9
5
10 - 10
5
10
0
- 25
0
25
50
75 85
Ambient temperature Ta ( ˚C )
100
10 - 11
5
- 25
175
50
25
50
75
Ambient temperature T a ( ˚C )
100
V CE = 2V
T a = 25˚C
V CE = 2V
E e = 0.1mW/cm2
Collector current I C ( mA )
150
125
100
75
50
- 25
0
Fig.4-a Collector Current vs. Irradiance
(PT481 )
Fig. 3 Relative Collector Current vs.
Ambient Temperature
Relative collector current ( % )
V CE
5
Collector dark current I
Collector power dissipation P C ( mW )
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
20
10
5
2
0
25
50
75
Ambient temperature Ta ( ˚C )
100
1
2
5
10 - 1
2
Irradiance E e ( mW/cm2 )
5
1
PT481/PT481F/PT483F1
Fig.4-b Collector Current vs. Irradiance
( PT481F/PT483F1 )
25
V CE = 2V
T a = 25˚C
20
10
5
2
5
10 -1
2
Irradiance E e ( mW/cm2 )
0.15m
15
2
0.1mW/cm
10
2
0.08mW/cm
2
0.06mW/cm
0
1
2
3
4
5
Collector- emitter voltage VCE ( V )
6
100
T a = 25˚C
T a = 25˚C
2
14
0.04mW/cm2
0.02mW/cm2
Fig. 6 Spectral Sensitivity
16
/cm
mW
12
E
10
=
e
80
0.2
Relative sensitivity ( % )
Collector current I C ( mA )
2
W/cm
0
1
5
Fig.5-b Collector Current vs.
Collector-emitter Voltage
( PT481F/PT483F1 )
2
cm
W/
5m
0.1
8
P C ( MAX. )
2
m
.1mW/c
0
m2
0.08mW/c
m2
0.06mW/c
2
0.04mW/cm
6
4
2
0
Ee =
20
0.2mW/cm2
5
2
1
P C ( MAX. )
T a = 25˚C
Collector current I C ( mA )
Collector current I C ( mA )
50
Fig.5-a Collector Current vs.
Collector-emitter Voltage
(PT481 )
60
PT481
PT481F
PT483F1
40
20
0.02mW/cm2
0
2
4
6
8
10
12
14
Collector-emitter voltage V CE ( V )
16
Fig. 7 Response Time vs. Load Resistance
0
400
500
600 700 800 900
Wavelength λ ( nm )
1000 1100
Test Circuit for Response Time
1000
Response time ( µ s )
V CE = 2V
IC = 10mA
T a = 25˚C
Output Input
tr
100
tf
VCC
Output
td
td
10
ts
1
10
100
1000
Load resistance R L ( Ω )
90%
RL
ts
tr
5000
10%
tf
PT481/PT481F/PT483F1
Fig. 8 Sensitivity Diagram
Fig.9-a Collector-emitter Saturation
(PT481 )
Voltage vs. Irradiance
( Ta = 25˚C )
( Ta = 25˚C )
- 20˚
- 10˚
0˚
+ 10˚
+ 20˚
2.0
- 50˚
- 60˚
60
+ 40˚
40
+ 50˚
+ 60˚
20
- 70˚
+ 70˚
- 90˚
2.0
0.6
0.003
20mA
7mA
10mA
1mA
0.01 0.02
0.05 0.1
0.2
Irradiance E e ( mW/cm2 )
0.5
Fig.10 Relative Output vs. Distance
( Emitter : GL480 )
( PT481F/PT483F1 )
100
Relative output ( % )
20mA
10mA
5mA
2mA
1mA
IC = 0.5mA
Collector-emitter
saturation voltage V CE(sat) ( V )
1.0
50
1.8
1.2
1.0
0.6
0.005 0.01 0.02
0.05 0.1 0.2
Irradiance E e ( mW/ cm2 )
20
10
5
2
1
0.8
●
1.2
0.8
+ 90˚
0
Angular displacement θ
Fig.9-b Collector-emitter Saturation
Voltage vs. Irradiance
(PT481F/PT483F1 )
( Ta = 25˚C )
1.4
1.4
+ 80˚
- 80˚
1.6
1.6
IC = 0.5mA
- 40˚
1.8
Collector-emitter
saturation voltage V CE(sat) ( V )
Relative sensitivity ( % )
80
5mA
+ 30˚
- 30˚
2mA
100
0.5
0.5
1
Please refer to the chapter “ Precautions for Use.”
0.2
0.5
2
5
20
50
1
10
Distance between emitter and detector
d ( mm )