SHARP PT4800F

PT4800/PT4800F/PT4810/PT4810F/PT4850F
PT4800/PT4800F/PT4810
PT4810F/PT4850F
Thin Type Phototransistor
■ Features
■ Outline Dimensions
1.5
0.8
1.6
PT4800/F
PT4850F
2
❈ Epoxy resin
3.5
1.0
1.7
φ 0.8
17.5± 0.5
1
PT4810/F
2
0.8
0.5MIN.
1.8
0.7
2 - 0.45
2 - 0.9
PT4810F
Mark(blue)
PT4850F
Mark (black )
■ Applications
( Unit : mm )
3.0
2 - C0.5
0.8
Burry's dimensions
: 0.3MAX
Rest of gate
: 0.3MAX
1. Thin type package ( Thickness : 1.5mm )
2. Visible light cut-off type :
PT4800F/PT4810F/PT4850F
3. Single phototransistor output :
PT4800/PT4800F/PT4850F
Darlington phototransistor output:
PT4810/PT4810F
4. Thin type
1. VCRs
2. Floppy disk drives
2.54
1
2 - 0.25
2
1 Emitter
2 Collector
❈ Epoxy resin
■ Absolute Maximum Ratings
Parameter
Collector-emitter voltage
Emitter-collector voltage
PT4800/PT4800F/PT4850F
Collector current
PT4810/PT4810F
Collector power dissipation
Operating temperature
Storage temperature
*1
Soldering temperature
PT4800
Transparent resin
PT4810
Transparent blue resin
F type
Visible light cut-off resin ( black )
( Ta = 25˚C )
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
20
50
75
- 25 to + 85
- 40 to + 85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ”
1
PT4800/PT4800F/PT4810/PT4810F/PT4850F
■ Electro-optical Characteristics
Parameter
PT4800
PT4800F
*2
Collector current
PT4850F
PT4810
PT4810F
PT4800/PT4800F
PT4850F
Collector dark current
PT4810/PT4810F
PT4800/PT4800F
*2
PT4850F
Collector-emitter saturation
voltage
PT4810/PT4810F
( Ta = 25˚C )
Symbol
IC
I CEO
V CE
( sat )
BV CEO
Emitter-collector breakdown voltage
BV ECO
PT4800
PT4800F
PT4850F
PT4810
PT4810F
PT4800/PT4800F
PT4850F
TYP.
0.4
0.25
-
MAX.
1.0
0.75
0.56
7.0
6.0
Unit
mA
mA
mA
mA
mA
E e = 0, VCE = 20V
-
-
0.1
mA
E e = 0, VCE = 10V
E e = 10mW/cm2
I C = 0.5mA
E e = 1mW/cm2
I C = 2.5mA
I C = 0.1mA
Ee = 0
I E = 0.01mA
Ee = 0
-
-
1.0
mA
-
-
0.4
V
-
-
1.0
V
35
-
-
V
6
-
-
V
-
800
860
860
800
860
-
nm
nm
nm
nm
nm
-
3.0
-
µs
-
80
400
µs
-
3.5
-
µs
-
70
350
µs
-
± 35
-
˚
E e = 1mW/cm2
VCE = 5V
λp
Rise time
tr
PT4810/PT4810F
Response
time
MIN.
0.12
0.08
0.12
0.45
0.27
E e = 0.1mW/cm 2
VCE = 2V
Collector-emitter breakdown voltage
Peak sensitivity
wavelength
Conditions
PT4800/PT4800F
PT4850F
Fall time
tf
PT4810/PT4810F
∆θ
Half intensity angle
-
VCE = 2V, I C = 2mA
R L = 100Ω
VCE = 2V
I C = 10mA
R L = 100Ω
V CE = 2V, I C = 2mA
R L = 100Ω
V CE = 2V
I C = 10mA
R L = 100Ω
-
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
( PT4800/PT4800F/PT4850F )
-6
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
10
40
(A)
60
CEO
80
2
10 - 7
Collector dark current I
Collector power dissipation P C ( mW )
5 VCE = 20V
100
5
2
10 - 8
5
2
10 - 9
5
20
2
0
- 25
0
25
50
75 85
Ambient temperature T a ( ˚C )
100
10 - 10
0
25
50
75
Ambient temperature T a ( ˚C )
100
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 2-b Collector Dark Current vs. Ambient
Temperature
( PT4810/PT4810F )
-4
5
10 - 5
(A)
VCE = 5V
E e = 1mW/cm 2
140
5
10 - 6
CEO
Collector dark current I
160
V CE
= 10V
Relative collector current ( % )
10
Fig. 3-a Relative Collector Current vs.
Ambient Temperature
( PT4800/PT4800F/PT4850F )
5
10 - 7
5
10 - 8
5
10 - 9
5
10 - 10
5
120
100
80
60
40
20
10 - 11
5
- 25
0
25
50
75
Ambient temperature Ta ( ˚C )
0
0
100
Fig. 3-b Relative Collector Current vs.
Ambient Temperature
( PT4810/PT4810F )
100
70
( PT4800 )
V CE = 5V
T a = 25˚C
10
Collector current I C ( mA )
Relative collector current ( % )
20
VCE = 2V
E e = 0.1mW/cm 2
125
20
30
40
50
60
Ambient temperature T a ( ˚C )
Fig. 4-a Collector Current vs.
Irradiance
175
150
10
5
2
1
0.5
75
0.2
50
- 25
0
25
50
75
Ambient temperature T a ( ˚C )
0.1
0.1
100
Fig. 4-b Collector Current vs. Irradiance
( PT4800F/PT4850F )
5
Collector current I C ( mA )
Collector current I C ( mA )
0.5
0.2
10
20
V CE = 2V
T a = 25˚C
V CE = 5V
5 T a = 25˚C
1
0.5
2
5
1
Irradiance E e ( mW/cm2 )
Fig. 4-c Collector Current vs. Irradiance
( PT4810/PT4810F )
10
2
0.2
2
PT4810
1
PT4810F
0.5
0.2
0.1
0.05
0.1
0.2
0.5
1
2
5
Irradiance E e ( mW/cm2 )
10
20
0.1
2
5
2
10-1
Irradiance E e ( mW/cm2 )
5
1
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 5-a Collector Current vs.
Collector-emitter Voltage
(PT4800 )
0.6
Fig. 5-b Collector Current vs.
Collector-emitter Voltage
(PT4800F/PT4850F )
1.2
T a = 25˚C
1.0
0.4
E e = 1.0mW/cm
0.3
Collector current I C ( mA )
0.5
Collector current I C ( mA )
T a = 25˚C
E e = 3mW/cm2
2
0.75mW/cm2
0.2
0.5mW/cm2
0.1
2.5mW/cm 2
0.8
2.0mW/cm2
0.6
1.5mW/ cm 2
0.4
0.8mW/cm 2
1.0mW/cm 2
0.2
0.25mW/cm2
0.1mW/cm2
0
0
5
0.6mW/cm 2
10
15
20
25
30
Collector-emitter voltage V CE ( V )
0
0
35
Fig. 5-c Collector Current vs.
Collector-emitter Voltage
(PT4810 )
2.4
2
4
6
8
10
12
Collector-emitter voltage V CE ( V )
Fig. 5-d Collector Current vs.
Collector-emitter Voltage
(PT4810F )
1.2
T a = 25˚C
( mA )
1.0
C
1.6
Collector current I
Collector current I C ( mA )
T a = 25˚C
E e = 0.2mW/cm2
2.0
0.15mW/cm2
1.2
0.1mW/cm2
0.8
0.08mW/cm2
0.06mW/cm2
0.04mW/cm2
0.4
0
0
1
2
3
4
Collector-emitter voltage V
5
(V)
0.2mW/cm2
0.8
0.15mW/cm2
0.6
0.4
0.1mW/cm2
0.08mW/cm2
0.06mW/cm2
0.02mW/cm2
0.04mW/cm2
0
0
6
1
2
3
4
Collector-emitter voltage V
0.02mW/cm2
CE
5
(V)
6
Fig. 7-a Response Time vs. Load Resistance
( PT4800/PT4800F/PT4850F )
Fig. 6 Spectral Sensitivity
100
100
T a = 25˚C
50
80
PT4800
Response time t r , t f ( µ s )
Relative sensitivity ( % )
Ee =
0.2
CE
14
60
PT4810 PT4800F
PT4801F
PT4850F
40
V CE = 2V
I C = 2mA
T a = 25˚C
20
tr
tf
10
5 t
f
tr
20
2
0
400
500
600 700 800 900
Wavelength λ ( nm )
1000
1100
1
0.1
0.2
1
0.5
2
Load resistance R L ( k Ω )
5
10
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 7-b Response Time vs. Load Resistance
( PT4810 / PT4810F )
Test Circuit for Response Time
( PT4800 / PT4800F/ PT4850F )
1000
Response time ( µ s )
VCE = 2V
I C = 10mA
T a = 25˚C
tr
100
Output Input
tf
VCC
Output
td
10
1
90%
RL
10%
ts
10
tr
100
1000
Load resistance R L ( Ω )
tf
5000
Test Circuit for Response Time
( PT4810 / PT4810F )
( Ta = 25˚C)
Fig. 8 Sensitivity Diagram
- 20˚
- 10˚
0˚
+ 10˚
+ 20˚
100
+ 30˚
- 30˚
Output Input
- 40˚
90%
RL
VCC
Relative sensitivity ( % )
80
- 50˚
Output
60
+ 40˚
40
+ 50˚
10%
- 60˚
+ 60˚
ts
td
tf
tr
20
- 70˚
+ 70˚
- 80˚
+ 80˚
- 90˚
0.8
0.6
0.4
1.2
2.0mA
1.4
1.0mA
1.6
1.5mA
1.8
0.5mA
1.0mA
1.5mA
0.5mA
1.0
1.0
0.8
0.6
0.4
0.2
0.2
0
0.1
2.0
Collector-emitter saturation voltage
V CE(sat) ( V )
1.2
0.1mA
1.4
I C = 0.05mA
Collector-emitter saturation voltage
V CE(sat)
1.8
1.6
2.2
T a = 25˚C
2.0
0.1mA
2.2
Fig. 9-b Collector-emitter Saturation
Voltage vs. Irradiance
( PT4800F/ PT4850F )
I C = 0.05mA
Fig. 9-a Collector-emitter Saturation
Voltage vs. Irradiance
(PT4800 )
+ 90˚
0
Angular displacement θ
0.2
0.5
2
1
Irradiance E e ( mW/cm2 )
5
10
T a = 25˚C
0
0.1 0.2
0.5
2
5
1
Irradiance E e ( mW/cm2 )
10
20
PT4800/PT4800F/PT4810/PT4810F/PT4850F
Fig. 9-c Collector-emitter Saturation Voltage
(PT4810 )
vs. Irradiance
Fig.9-d Collector-emitter Saturation Voltage
(PT4810F )
vs. Irradiance
2.2
1.2
1.0
0.8
0.6
0.4
0
0.01 0.02
0.05 0.1 0.2
0.5
Irradiance E e ( mW/cm 2 )
1
1.6
6mA
8mA
4mA
2mA
1mA
1.4
1.2
1.0
0.8
0.6
0.4
0
0.01 0.02
2
Fig.10-a Relative Output vs. Distance
(PT4800F ) ( Emitter : GL4800 )
100
100
50
50
20
20
10
5
2
2
5
2
1
0.5
0.5
Please refer to the chapter “ Precautions for Use”
1
10
1
0.5
1
2
5
10
20
50
Distance between emitter and detector d ( mm )
0.05 0.1 0.2
0.5
Irradiance E e ( mW/cm2)
Fig.10-b Relative Output vs. Distance
(PT4810F ) (Emitter : GL4800 )
Relative output ( % )
Relative output ( % )
1.8
0.2
0.2
●
I C = 0.5mA
6mA
8mA
4mA
1.4
0.2
T a = 25˚C
2.0
Collector-emitter saturation voltage
V CE(sat ) ( V)
1.6
2mA
1.8
1mA
T a = 25˚C
I C = 0.5mA
Collector-emitter saturation voltage
V CE(sat ) ( V)
2.0
0.2
0.5
1
2
5
10
20
50
Distance between emitter and detector d ( mm )