PT4800/PT4800F/PT4810/PT4810F/PT4850F PT4800/PT4800F/PT4810 PT4810F/PT4850F Thin Type Phototransistor ■ Features ■ Outline Dimensions 1.5 0.8 1.6 PT4800/F PT4850F 2 ❈ Epoxy resin 3.5 1.0 1.7 φ 0.8 17.5± 0.5 1 PT4810/F 2 0.8 0.5MIN. 1.8 0.7 2 - 0.45 2 - 0.9 PT4810F Mark(blue) PT4850F Mark (black ) ■ Applications ( Unit : mm ) 3.0 2 - C0.5 0.8 Burry's dimensions : 0.3MAX Rest of gate : 0.3MAX 1. Thin type package ( Thickness : 1.5mm ) 2. Visible light cut-off type : PT4800F/PT4810F/PT4850F 3. Single phototransistor output : PT4800/PT4800F/PT4850F Darlington phototransistor output: PT4810/PT4810F 4. Thin type 1. VCRs 2. Floppy disk drives 2.54 1 2 - 0.25 2 1 Emitter 2 Collector ❈ Epoxy resin ■ Absolute Maximum Ratings Parameter Collector-emitter voltage Emitter-collector voltage PT4800/PT4800F/PT4850F Collector current PT4810/PT4810F Collector power dissipation Operating temperature Storage temperature *1 Soldering temperature PT4800 Transparent resin PT4810 Transparent blue resin F type Visible light cut-off resin ( black ) ( Ta = 25˚C ) Symbol V CEO V ECO IC PC T opr T stg T sol Rating 35 6 20 50 75 - 25 to + 85 - 40 to + 85 260 Unit V V mA mW ˚C ˚C ˚C *1 For 3 seconds at the position of 1.8mm from the bottom face of resin package “ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device. ” 1 PT4800/PT4800F/PT4810/PT4810F/PT4850F ■ Electro-optical Characteristics Parameter PT4800 PT4800F *2 Collector current PT4850F PT4810 PT4810F PT4800/PT4800F PT4850F Collector dark current PT4810/PT4810F PT4800/PT4800F *2 PT4850F Collector-emitter saturation voltage PT4810/PT4810F ( Ta = 25˚C ) Symbol IC I CEO V CE ( sat ) BV CEO Emitter-collector breakdown voltage BV ECO PT4800 PT4800F PT4850F PT4810 PT4810F PT4800/PT4800F PT4850F TYP. 0.4 0.25 - MAX. 1.0 0.75 0.56 7.0 6.0 Unit mA mA mA mA mA E e = 0, VCE = 20V - - 0.1 mA E e = 0, VCE = 10V E e = 10mW/cm2 I C = 0.5mA E e = 1mW/cm2 I C = 2.5mA I C = 0.1mA Ee = 0 I E = 0.01mA Ee = 0 - - 1.0 mA - - 0.4 V - - 1.0 V 35 - - V 6 - - V - 800 860 860 800 860 - nm nm nm nm nm - 3.0 - µs - 80 400 µs - 3.5 - µs - 70 350 µs - ± 35 - ˚ E e = 1mW/cm2 VCE = 5V λp Rise time tr PT4810/PT4810F Response time MIN. 0.12 0.08 0.12 0.45 0.27 E e = 0.1mW/cm 2 VCE = 2V Collector-emitter breakdown voltage Peak sensitivity wavelength Conditions PT4800/PT4800F PT4850F Fall time tf PT4810/PT4810F ∆θ Half intensity angle - VCE = 2V, I C = 2mA R L = 100Ω VCE = 2V I C = 10mA R L = 100Ω V CE = 2V, I C = 2mA R L = 100Ω V CE = 2V I C = 10mA R L = 100Ω - *2 E e : Irradiance by CIE standard light source A ( tungsten lamp) Fig. 2-a Collector Dark Current vs. Ambient Temperature ( PT4800/PT4800F/PT4850F ) -6 Fig. 1 Collector Power Dissipation vs. Ambient Temperature 10 40 (A) 60 CEO 80 2 10 - 7 Collector dark current I Collector power dissipation P C ( mW ) 5 VCE = 20V 100 5 2 10 - 8 5 2 10 - 9 5 20 2 0 - 25 0 25 50 75 85 Ambient temperature T a ( ˚C ) 100 10 - 10 0 25 50 75 Ambient temperature T a ( ˚C ) 100 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 2-b Collector Dark Current vs. Ambient Temperature ( PT4810/PT4810F ) -4 5 10 - 5 (A) VCE = 5V E e = 1mW/cm 2 140 5 10 - 6 CEO Collector dark current I 160 V CE = 10V Relative collector current ( % ) 10 Fig. 3-a Relative Collector Current vs. Ambient Temperature ( PT4800/PT4800F/PT4850F ) 5 10 - 7 5 10 - 8 5 10 - 9 5 10 - 10 5 120 100 80 60 40 20 10 - 11 5 - 25 0 25 50 75 Ambient temperature Ta ( ˚C ) 0 0 100 Fig. 3-b Relative Collector Current vs. Ambient Temperature ( PT4810/PT4810F ) 100 70 ( PT4800 ) V CE = 5V T a = 25˚C 10 Collector current I C ( mA ) Relative collector current ( % ) 20 VCE = 2V E e = 0.1mW/cm 2 125 20 30 40 50 60 Ambient temperature T a ( ˚C ) Fig. 4-a Collector Current vs. Irradiance 175 150 10 5 2 1 0.5 75 0.2 50 - 25 0 25 50 75 Ambient temperature T a ( ˚C ) 0.1 0.1 100 Fig. 4-b Collector Current vs. Irradiance ( PT4800F/PT4850F ) 5 Collector current I C ( mA ) Collector current I C ( mA ) 0.5 0.2 10 20 V CE = 2V T a = 25˚C V CE = 5V 5 T a = 25˚C 1 0.5 2 5 1 Irradiance E e ( mW/cm2 ) Fig. 4-c Collector Current vs. Irradiance ( PT4810/PT4810F ) 10 2 0.2 2 PT4810 1 PT4810F 0.5 0.2 0.1 0.05 0.1 0.2 0.5 1 2 5 Irradiance E e ( mW/cm2 ) 10 20 0.1 2 5 2 10-1 Irradiance E e ( mW/cm2 ) 5 1 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 5-a Collector Current vs. Collector-emitter Voltage (PT4800 ) 0.6 Fig. 5-b Collector Current vs. Collector-emitter Voltage (PT4800F/PT4850F ) 1.2 T a = 25˚C 1.0 0.4 E e = 1.0mW/cm 0.3 Collector current I C ( mA ) 0.5 Collector current I C ( mA ) T a = 25˚C E e = 3mW/cm2 2 0.75mW/cm2 0.2 0.5mW/cm2 0.1 2.5mW/cm 2 0.8 2.0mW/cm2 0.6 1.5mW/ cm 2 0.4 0.8mW/cm 2 1.0mW/cm 2 0.2 0.25mW/cm2 0.1mW/cm2 0 0 5 0.6mW/cm 2 10 15 20 25 30 Collector-emitter voltage V CE ( V ) 0 0 35 Fig. 5-c Collector Current vs. Collector-emitter Voltage (PT4810 ) 2.4 2 4 6 8 10 12 Collector-emitter voltage V CE ( V ) Fig. 5-d Collector Current vs. Collector-emitter Voltage (PT4810F ) 1.2 T a = 25˚C ( mA ) 1.0 C 1.6 Collector current I Collector current I C ( mA ) T a = 25˚C E e = 0.2mW/cm2 2.0 0.15mW/cm2 1.2 0.1mW/cm2 0.8 0.08mW/cm2 0.06mW/cm2 0.04mW/cm2 0.4 0 0 1 2 3 4 Collector-emitter voltage V 5 (V) 0.2mW/cm2 0.8 0.15mW/cm2 0.6 0.4 0.1mW/cm2 0.08mW/cm2 0.06mW/cm2 0.02mW/cm2 0.04mW/cm2 0 0 6 1 2 3 4 Collector-emitter voltage V 0.02mW/cm2 CE 5 (V) 6 Fig. 7-a Response Time vs. Load Resistance ( PT4800/PT4800F/PT4850F ) Fig. 6 Spectral Sensitivity 100 100 T a = 25˚C 50 80 PT4800 Response time t r , t f ( µ s ) Relative sensitivity ( % ) Ee = 0.2 CE 14 60 PT4810 PT4800F PT4801F PT4850F 40 V CE = 2V I C = 2mA T a = 25˚C 20 tr tf 10 5 t f tr 20 2 0 400 500 600 700 800 900 Wavelength λ ( nm ) 1000 1100 1 0.1 0.2 1 0.5 2 Load resistance R L ( k Ω ) 5 10 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 7-b Response Time vs. Load Resistance ( PT4810 / PT4810F ) Test Circuit for Response Time ( PT4800 / PT4800F/ PT4850F ) 1000 Response time ( µ s ) VCE = 2V I C = 10mA T a = 25˚C tr 100 Output Input tf VCC Output td 10 1 90% RL 10% ts 10 tr 100 1000 Load resistance R L ( Ω ) tf 5000 Test Circuit for Response Time ( PT4810 / PT4810F ) ( Ta = 25˚C) Fig. 8 Sensitivity Diagram - 20˚ - 10˚ 0˚ + 10˚ + 20˚ 100 + 30˚ - 30˚ Output Input - 40˚ 90% RL VCC Relative sensitivity ( % ) 80 - 50˚ Output 60 + 40˚ 40 + 50˚ 10% - 60˚ + 60˚ ts td tf tr 20 - 70˚ + 70˚ - 80˚ + 80˚ - 90˚ 0.8 0.6 0.4 1.2 2.0mA 1.4 1.0mA 1.6 1.5mA 1.8 0.5mA 1.0mA 1.5mA 0.5mA 1.0 1.0 0.8 0.6 0.4 0.2 0.2 0 0.1 2.0 Collector-emitter saturation voltage V CE(sat) ( V ) 1.2 0.1mA 1.4 I C = 0.05mA Collector-emitter saturation voltage V CE(sat) 1.8 1.6 2.2 T a = 25˚C 2.0 0.1mA 2.2 Fig. 9-b Collector-emitter Saturation Voltage vs. Irradiance ( PT4800F/ PT4850F ) I C = 0.05mA Fig. 9-a Collector-emitter Saturation Voltage vs. Irradiance (PT4800 ) + 90˚ 0 Angular displacement θ 0.2 0.5 2 1 Irradiance E e ( mW/cm2 ) 5 10 T a = 25˚C 0 0.1 0.2 0.5 2 5 1 Irradiance E e ( mW/cm2 ) 10 20 PT4800/PT4800F/PT4810/PT4810F/PT4850F Fig. 9-c Collector-emitter Saturation Voltage (PT4810 ) vs. Irradiance Fig.9-d Collector-emitter Saturation Voltage (PT4810F ) vs. Irradiance 2.2 1.2 1.0 0.8 0.6 0.4 0 0.01 0.02 0.05 0.1 0.2 0.5 Irradiance E e ( mW/cm 2 ) 1 1.6 6mA 8mA 4mA 2mA 1mA 1.4 1.2 1.0 0.8 0.6 0.4 0 0.01 0.02 2 Fig.10-a Relative Output vs. Distance (PT4800F ) ( Emitter : GL4800 ) 100 100 50 50 20 20 10 5 2 2 5 2 1 0.5 0.5 Please refer to the chapter “ Precautions for Use” 1 10 1 0.5 1 2 5 10 20 50 Distance between emitter and detector d ( mm ) 0.05 0.1 0.2 0.5 Irradiance E e ( mW/cm2) Fig.10-b Relative Output vs. Distance (PT4810F ) (Emitter : GL4800 ) Relative output ( % ) Relative output ( % ) 1.8 0.2 0.2 ● I C = 0.5mA 6mA 8mA 4mA 1.4 0.2 T a = 25˚C 2.0 Collector-emitter saturation voltage V CE(sat ) ( V) 1.6 2mA 1.8 1mA T a = 25˚C I C = 0.5mA Collector-emitter saturation voltage V CE(sat ) ( V) 2.0 0.2 0.5 1 2 5 10 20 50 Distance between emitter and detector d ( mm )