SHINDENGEN Schottky Rectifiers (SBD) Single OUTLINE DIMENSIONS D3FS4A Case : 2F Unit : mm 40V 2.6A FEATURES ● Small SMT ● Tj150℃ ● Low VF=0.45V ● PRRSM avalanche guaranteed APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tl=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj Maximum Reverse Voltage VRM Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load Ta=34℃ On alumina substrate Peak Surge Forward Current Repetitive Peak Surge Reverse Power IFSM P RRSM 50Hz sine wave, R-load Ta=30℃ On glass-epoxy substrate 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃ Pulse width 10μs, Tj=25℃ ●Electrical Characteristics (If not specified Tl=25℃) Item Symbol Conditions Forward Voltage VF IF=2.6A, Pulse measurement Reverse Current IR VR=VRM, Pulse measurement Junction Capacitance f=1MHz, VR=10V Cj θjl junction to lead Thermal Resistance θja junction to ambient On alumina substrate junction to ambient On glass-epoxy substrate Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd Ratings -55∼150 150 40 45 2.6 1.9 150 330 Unit ℃ ℃ V V A Ratings Max.0.45 Max.5 Typ.340 Max.23 Max.80 Max.115 Unit V mA pF A W ℃/W D3FS4A Forward Voltage Forward Current IF [A] 10 Tl=150°C [MAX] Tl=150°C [TYP] Tl=25°C [MAX] Tl=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 Forward Voltage VF [V] 1 1.2 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 D3FS4A f=1MHz Tl=25°C TYP per diode D3FS4A Reverse Current 1000 Tl=150°C [MAX] Reverse Current IR [mA] 100 Tl=150°C [TYP] Tl=125°C [TYP] 10 Tl=100°C [TYP] Tl=75°C [TYP] 1 0.1 Pulse measurement per diode 0.01 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 D3FS4A Reverse Power Dissipation Reverse Power Dissipation PR [W] 14 12 DC D=0.05 0.1 10 0.2 8 0.3 6 0.5 4 SIN 0.8 2 0 0 10 20 30 40 50 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T D3FS4A Forward Power Dissipation 2 DC Forward Power Dissipation PF [W] D=0.8 0.5 SIN 1.5 0.2 0.3 0.1 0.05 1 0.5 0 0 1 2 3 4 5 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T D3FS4A Derating Curve 5 Average Rectified Forward Current IO [A] Alumina substrate DC 4 D=0.8 0.5 3 SIN 0.3 2 0.2 0.1 0.05 1 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 10V IO 0 0 VR tp D=tp /T T D3FS4A Derating Curve Average Rectified Forward Current IO [A] 4 Glass-epoxy substrate 3.5 3 DC D=0.8 2.5 0.5 SIN 2 1.5 0.3 0.2 1 0.1 0.5 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature Ta [°C] VR = 10V IO 0 0 VR tp D=tp /T T D3FS4A Peak Surge Forward Capability IFSM 200 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=125°C before surge current is applied 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP