SHINDENGEN S15SCA4M

SHINDENGEN
Schottky Barrier Diode
Twin Diode
OUTLINE DIMENSIONS
S15SCA4M
Case : TO-220
Unit : mm
40V 15A
FEATURE
FEATURES
● SMT
● Tj150℃
● PRRSM avalanche guaranteed
● High current capacity with Small Package
APPLICATION
● Switching power supply
● DC/DC converter
●Home Appliances, Office Equipment
●Telecommunication
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Tstg
Storage Temperature
Tj
Operating Junction Temperature
VRM
Maximum Reverse Voltage
VRRSM Pulse width 0.5ms, duty 1/40
Repetitive Peak Surge Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave, R-load, Tc=129℃
IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=125℃
Peak Surge Forward Current
PRRSM Pulse width 10μs, Rating of per diode, Tj=25℃
Repetitive Peak Surge Reverse Power
TOR (Recommended torque:0.3N・m)
Mounting Torque
Ratings
-40~150
150
40
45
15
150
330
0.5
Unit
℃
℃
V
V
A
A
W
N・m
●Electrical Characteristics (If not specified
Item
Symbol
VF
Forward Voltage
IR
Reverse Current
Cj
Junction Capacitance
θjc
Thermal Resistance
Ratings
Max.0.55
Max.5
Typ.340
Max.1.7
Unit
V
mA
pF
℃/W
Tc=25℃)
Conditions
IF=7.5A, Pulse measurement, Rating of per diode
VR=VRM,
Pulse measurement, Rating of per diode
f=1MHz, VR=10V, Rating of per diode
junction to case
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
S15SCA4M
Forward Voltage
Forward Current IF [A]
10
Tc=150°C [MAX]
Tc=150°C [TYP]
Tc=25°C [MAX]
Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
0.1
100
1000
10
Junction Capacitance
Reverse Voltage VR [V]
1
S15SCA4M
f=1MHz
Tc=25°C
TYP
per diode
S15SCA4M
Reverse Current
1000
Tc=150°C [MAX]
100
Reverse Current IR [mA]
Tc=150°C [TYP]
Tc=125°C [TYP]
10
Tc=100°C [TYP]
Tc=75°C [TYP]
1
0.1
Pulse measurement per diode
0.01
0
5
10
15
20
25
Reverse Voltage VR [V]
30
35
40
S15SCA4M
Reverse Power Dissipation
Reverse Power Dissipation PR [W]
25
DC
D=0.05
0.1
20
0.2
0.3
15
0.5
10
SIN
5
0
0.8
0
10
20
30
40
50
Reverse Voltage VR [V]
Tj = 150°C
0
VR
tp
D=tp /T
T
S15SCA4M
Forward Power Dissipation
16
Forward Power Dissipation PF [W]
14
DC
D=0.8
12
SIN
10
0.2
0.05
8
0.5
0.3
0.1
6
4
2
0
0
5
10
15
20
25
Average Rectified Forward Current IO [A]
Tj = 150°C
IO
0
tp
D=tp /T
T
S15SCA4M
Derating Curve
Average Rectified Forward Current IO [A]
30
25
DC
D=0.8
20
0.5
SIN
15
0.3
0.2
10
0.1
0.05
5
0
0
20
40
60
80
100
120
140
160
Case Temperature Tc [°C]
VR = 20V
IO
0
0
VR
tp
D=tp /T
T
S15SCA4M
Peak Surge Forward Capability
IFSM
200
10ms 10ms
Peak Surge Forward Current IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=125°C before
surge current is applied
150
100
50
0
1
2
5
10
20
Number of Cycles [cycles]
50
100
SBD
Repetitive Surge Reverse Power Derating Curve
120
PRRSM Derating [%]
100
80
60
40
20
0
0
50
100
150
Junction Temperature Tj [°C]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP
SBD
Repetitive Surge Reverse Power Capability
PRRSM(t p) / PRRSM(t p=10µs) Ratio
10
1
0.1
1
10
100
Pulse Width t p [µs]
IRP
IR
VR
VRP
0.5IRP
0
tp
PRRSM = IRP × VRP