SHINDENGEN D4SBL20U

SHINDENGEN
Super Fast Recovery Rectifiers
Super Fast Bridges
OUTLINE DIMENSIONS
D4SBL20U
Case : 3S
(Unit : mm)
200V 4A
FEATURES
● Low noise
● SIL Package
● High IFSM
APPLICATION
●Switching power supply
●Home (Electrical) Appliances
●Office Equipment, Telecommunication,
Factory Automation
RATINGS
●Absolute Maximum Ratings (If not specified Tc=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
VRM
Maximum Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave, R-load With heatsink
Peak Surge Forward Current
Dielectric Strength
Mounting Torque
IFSM
Vdis
TOR
Tc=108℃
50Hz sine wave, R-load Without heatsink Ta=25℃
50Hz sine wave, Non-repetitive 1cycle peak value, Tj=25 ℃
Terminals to case, AC 1 minute
(Recommended torque:
0.5N・m)
●Electrical Characteristics (If not specified Tc=25℃)
Item
Symbol
Conditions
V
IF=2A,
Pulse measurement, Rating of per diode
Forward Voltage
F
IR
VR=VRM, Pulse measurement, Rating of per diode
Reverse Current
Reverse Recovery Time
trr IF = 0.5A, IR = 1A
θjc junction to case With heatsink
Thermal Resistance
θjl junction to lead Without heatsink
θja junction to ambient Without heatsink
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Ratings
-55∼150
150
200
4
2.5
60
2
0.8
Unit
℃
℃
V
A
A
kV
N・m
Ratings Unit
Max.0.98
V
Max.10
μA
Max.35
ns
Max.5.5
Max.6
℃/W
Max.30
D4SBL20U
Forward Voltage
100
Forward Current IF [A]
10
Tc=150°C [TYP]
Tc=25°C [TYP]
1
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
Junction Capacitance Cj [pF]
10
100
1
Junction Capacitance
Reverse Voltage VR [V]
10
D4SBL20U
100
f=1MHz
Tc=25°C
TYP
per diode
D4SBL20U
Forward Power Dissipation
Forward Power Dissipation PF [W]
10
8
SIN
6
4
2
0
0
1
2
3
4
Average Rectified Forward Current IO [A]
Tj = Tjmax
5
D4SBL20U
Derating Curve
7
Average Rectified Forward Current IO [A]
Heatsink
Tc
Tc
6
5
SIN
4
3
2
1
0
0
20
40
60
80
100
120
Case Temperature Tc [°C]
Sine wave
R-load
with heatsink
140
160
D4SBL20U
Derating Curve
Average Rectified Forward Current IO [A]
3
SIN
2.5
PCB
Glass-epoxy substrate
Soldering land 5mmφ
2
1.5
1
0.5
0
0
20
40
60
80
100
120
Ambient Temperature Ta [°C]
VR = VRM
Sine wave
R-load
Free in air
140
160
D4SBL20U
Peak Surge Forward Capability
IFSM
120
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
100
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
80
60
40
20
0
1
2
5
10
20
Number of Cycles [cycles]
50
100