SHINDENGEN Schottky Rectifiers (SBD) SF10SC3L Dual OUTLINE DIMENSIONS Case : FTO-220 Unit : mm 30V 10A FEATURES ● Tj150℃ ● Low VF=0.45V ● PRRSM avalanche guaranteed ● Fully Isolated Molding ● Dielectric strength 2kV guaranteed APPLICATION ● Switching power supply ● DC/DC converter ● Home Appliances, Office Equipment ● Telecommunication RATINGS ●Absolute Maximum Ratings (If not specified Tc=25℃) Item Symbol Conditions Storage Temperature Tstg Operating Junction Temperature Tj VRM Maximum Reverse Voltage Repetitive Peak Surge Reverse Voltage VRRSM Pulse width 0.5ms, duty 1/40 Average Rectified Forward Current IO 50Hz sine wave, R-load, Rating for each diode Io/2, Tc=139℃ IFSM 50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25℃ Peak Surge Forward Current Repetitive Peak Surge Reverse Power P RRSM Pulse width 10μs, Rating of per diode, Tj=25℃ Dielectric Strength Vdis Terminals to case, AC 1 minute Mounting Torque TOR (Recommended torque：0.3N･m) Ratings -55∼150 150 30 35 10 150 330 2 0.5 Unit ℃ ℃ V V A A W kV N･m ●Electrical Characteristics (If not specified Tc=25℃) Item Symbol Conditions Forward Voltage VF IF=4A, Pulse measurement, Rating of per diode Reverse Current IR V R=VRM, Pulse measurement, Rating of per diode f=1MHz, V R=10V, Rating of per diode Junction Capacitance Cj Thermal Resistance θjc junction to case Ratings Max.0.45 Max.5 Typ.310 Max.2.3 Unit V mA pF ℃/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF10SC3L Forward Voltage Forward Current IF [A] 10 Tc=150°C [MAX] Tc=150°C [TYP] Tc=25°C [MAX] Tc=25°C [TYP] 1 Pulse measurement per diode 0.1 0 0.2 0.4 0.6 0.8 1 Forward Voltage VF [V] 1.2 1.4 1.6 Junction Capacitance Cj [pF] 0.1 100 1000 10 Junction Capacitance Reverse Voltage VR [V] 1 SF10SC3L f=1MHz Tc=25°C TYP per diode SF10SC3L Reverse Current 1000 Tc=150°C [MAX] Tc=150°C [TYP] 100 Reverse Current IR [mA] Tc=125°C [TYP] Tc=100°C [TYP] 10 Tc=75°C [TYP] 1 Pulse measurement per diode 0.1 0 5 10 15 20 25 Reverse Voltage VR [V] 30 35 40 SF10SC3L Reverse Power Dissipation Reverse Power Dissipation PR [W] 25 DC D=0.05 0.1 20 0.2 15 0.3 10 0.5 5 SIN 0.8 0 0 5 10 15 20 25 30 35 Reverse Voltage VR [V] Tj = 150°C 0 VR tp D=tp /T T SF10SC3L Forward Power Dissipation Forward Power Dissipation PF [W] 6 DC 5 D=0.8 0.5 4 SIN 0.3 0.2 3 0.1 0.05 2 1 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = 150°C IO 0 tp D=tp /T T SF10SC3L Derating Curve Average Rectified Forward Current IO [A] 20 DC 15 D=0.8 0.5 SIN 10 0.3 0.2 0.1 5 0.05 0 0 20 40 60 80 100 120 140 160 Case Temperature Tc [°C] VR = 30V IO 0 0 VR tp D=tp /T T SF10SC3L Peak Surge Forward Capability IFSM 200 10ms 10ms Peak Surge Forward Current IFSM [A] 1 cycle non-repetitive, sine wave, Tj=25°C before surge current is applied 150 100 50 0 1 2 5 10 20 Number of Cycles [cycles] 50 100 SBD Repetitive Surge Reverse Power Derating Curve 120 PRRSM Derating [%] 100 80 60 40 20 0 0 50 100 150 Junction Temperature Tj [°C] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP SBD Repetitive Surge Reverse Power Capability PRRSM(t p) / PRRSM(t p=10µs) Ratio 10 1 0.1 1 10 100 Pulse Width t p [µs] IRP IR VR VRP 0.5IRP 0 tp PRRSM = IRP × VRP