SHINDENGEN S1VBA60

SHINDENGEN
General Purpose Rectifiers
S1VBA60
SIL Bridges
OUTLINE DIMENSIONS
Case : 1V
Unit : mm
600V 1A
FEATURES
● Small Single In-Line(:SIL)Package
● High IFSM
● Applicable to Automatic Insertion
APPLICATION
● Switching power supply
● Home Appliances, Office Equipment
● Telecommunication, Factory Automation
RATINGS
●Absolute Maximum Ratings (If not specified Tl=25℃)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
VRM
Maximum Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave,R-load,On glass-epoxy substrate, Ta=25℃
IFSM 50Hz sine wave,Non-repetitive 1cycle peak value, Tj=25℃
Peak Surge Forward Current
I2t
Current Squared Time
1ms≦t<10ms Tj=25℃
Ratings
-40∼150
150
600
1
50
10
●Electrical Characteristics (If not specified Tl=25℃)
Item
Symbol
Conditions
VF
Forward Voltage
IF=0.5A, Pulse measurement,Rating of per diode
IR
VR=VRM , Pulse measurement,Rating of per diode
Reverse Current
Thermal Resistance
θjl junction to lead
θja junction to ambient
Ratings
Unit
Max.1.05
V
Max.10
μA
Max.16 ℃/W
Max.62
Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
Unit
℃
℃
V
A
A
A2s
S1VBAx
Forward Voltage
Forward Current IF [A]
10
Tl=150°C [TYP]
1
Tl=25°C [TYP]
Pulse measurement per diode
0.1
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
S1VBAx
Forward Power Dissipation
2
Forward Power Dissipation PF [W]
SIN
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
Average Rectified Forward Current IO [A]
Tj = 150°C
Sine wave
1
S1VBAx
Derating Curve
Average Rectified Forward Current IO [A]
1.2
1
PCB
l
Glass-epoxy substrate
Soldering land 3mmφ
0.8
l = 10mm
l = 2mm
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature Ta [°C]
VR = VRM
Sine wave
R-load
Free in air
140
160
S1VBAx
Peak Surge Forward Capability
IFSM
80
10ms 10ms
Peak Surge Forward Current IFSM [A]
70
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
60
50
40
30
20
10
0
1
2
5
10
20
Number of Cycles [cycles]
50
100