SHINDENGEN S1NB60

SHINDENGEN
General Purpose Rectifiers
S1NB60
DIL Bridges
OUTLINE DIMENSIONS
Case : 1N
Unit : mm
600V 1A
FEATURES
Small Dual In-Line(:DIL) Package
5 mm pitch between terminals
Applicable to Automatic Insertion
APPLICATION
Switching power supply
Home Appliances, Office Equipment
Telecommuication, Factory Automation
RATINGS
œAbsolute Maximum Ratings (If not specified Tl=25Ž)
Item
Symbol
Conditions
Storage Temperature
Tstg
Operating Junction Temperature
Tj
VRM
Maximum Reverse Voltage
IO
Average Rectified Forward Current
50Hz sine wave, R-load, On glass-epoxy substrate, Ta=25Ž
I FSM
Peak Surge Forward Current
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
I 2t
Current Squared Time
1ms…tƒ10ms@Tj=25Ž
Ratings
-40`150
150
600
1
30
4.5
Unit
Ž
Ž
V
A
A
A 2s
œElectrical Characteristics (If not specified Tl=25Ž)
Item
Symbol
Conditions
VF
I F=0.5A, Pulse measurement, Rating of per diode
Forward Voltage
VR=VRM , Pulse measurement, Rating of per diode
Reverse Current
IR
Thermal Resistance
Æjl
junction to lead
Æja junction to ambient
Ratings
Max.1.05
Max.10
Max.15
Max.68
Unit
V
ÊA
Ž/W
Copyright & Copy;2002 Shindengen Electric Mfg.Co.,Ltd.
S1NBx
Forward Voltage
10
Forward Current IF [A]
1
Tl=150°C [TYP]
Tl=25°C [TYP]
0.1
Pulse measurement per diode
0.01
0
0.2
0.4
0.6
0.8
1
Forward Voltage VF [V]
1.2
1.4
1.6
S1NBx
Forward Power Dissipation
Forward Power Dissipation PF [W]
3
SIN
2.5
2
1.5
1
0.5
0
0
0.2
0.4
0.6
0.8
1
1.2
Average Rectified Forward Current IO [A]
Tj = 150°C
Sine wave
1.4
S1NBx
Average Rectified Forward Current IO [A]
1.4
Derating Curve
Glass-epoxy substrate
Soldering land 9mm×9mm
Conductor layer 35µm
1.2
SIN
1
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
Ambient Temperature Ta [°C]
Sine wave
R-load
Free in air
140
160
S1NBx
Peak Surge Forward Capability
IFSM
60
10ms 10ms
1 cycle
Peak Surge Forward Current IFSM [A]
50
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
40
30
20
10
0
1
2
5
10
20
Number of Cycles [cycles]
50
100