SHINDENGEN S40HC3

SHINDENGEN
Schottky Rectifiers (SBD)
Dual
OUTLINE DIMENSIONS
S40HC3
Case : MTO - 3P
Unit : mm
30V 40A
RATINGS
œAbsolute Maximum Ratings iTc=25Ž, unless otherwise specifiedj
Item
Symbol
Conditions
Ratings
Unit
Tstg
Tj
VRM
IO
IFSM
TOR
-55`125
125
30
40
400
0.8
Ž
Ž
V
A
A
N¥m
œElectrical Characteristics iTc=25Ž, unless otherwise specifiedj
Item
Symbol
Conditions
Ratings
Unit
VF
IR
Cj
Æjc
Max 0.4
Max 15
Typ 800
Max 0.7
V
mA
pF
Ž/W
Storage Temperature
Operating Junction Temperature
Maximum Reverse Voltage
Average Rectified Forward Current
Peak Surge Forward Current
Mounting Torque
Forward Voltage
Reverse Current
Junction Capacitance
Thermal Resistance
50Hz sine wave, R-load, Rating for each diode Io/2, Tc=105Ž
50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25Ž
(Recommended torqueF0.5N¥m)
IF=20A,
Pulse measurement, Rating of per diode
VR=30V,
Pulse measurement, Rating of per diode
f=1MHz,
VR=10V, Rating of per diode
junction to case
Copyright & Copy;2001 Shindengen Electric Mfg.Co.Ltd
S40HC3
Forward Voltage
Pulse measurement per diode
100
50
Forward Current
IF [A]
20
10
Tc=125°C [MAX]
Tc=125°C [TYP]
Tc= 25°C [MAX]
Tc= 25°C [TYP]
5
2
1
0.5
0.2
0.1
0
0.2
0.4
Forward Voltage
0.6
VF [V]
0.8
1
S40HC3
Reverse Current
Pulse measurement per diode
10000
Tc=125°C [TYP]
Reverse Current
IR [mA]
1000
Tc=100°C [TYP]
100
Tc=75°C [TYP]
Tc=50°C [TYP]
10
Tc=25°C [TYP]
1
0.1
0
5
10
15
Reverse Voltage
20
VR [V]
25
30
S40HC3
Forward Power Dissipation
Forward Power Dissipation
PF [W]
30
25
D=0.8
20
0.2
0.05
0.3
SIN
DC
0.5
0.1
15
10
5
0
0
10
20
30
40
50
60
70
IO [A]
Average Rectified Forward Current
Tj = 125°C
IO
0
tp
D=tp/T
T
S40HC3
Reverse Power Dissipation
Reverse Power Dissipation
PR [W]
120
DC
D=0.05
0.1
100
0.2
80
0.3
60
0.5
40
SIN
0.8
20
0
0
5
10
15
20
Reverse Voltage
Tj = 125°C
25
30
35
VR [V]
0
VR
tp
D=tp/T
T
S40HC3
Derating Curve
IO [A]
80
70
Average Rectified Forward Current
DC
60
D=0.8
50
0.5
40 SIN
0.3
30 0.2
20 0.1
0.05
10
0
0
20
40
60
80
Case Temperature
100
120
140
Tc [°C]
VR = 15V
IO
0
0
VR
tp
D=tp/T
T
S40HC3
Peak Surge Forward Capability
IFSM
700
10ms
600
IFSM [A]
1 cycle
non-repetitive,
sine wave,
Tj=25°C before
surge current is applied
500
Peak Surge Forward Current
10ms
400
300
200
100
0
1
2
5
10
Number of Cycles
20
[cycle]
50
100
S40HC3
Junction Capacitance
10000
Junction Capacitance
Cj
[pF]
f=1MHz
Tc=25°C
TYP
per diode
1000
100
0.1
0.2
0.5
1
Reverse Voltage
2
5
VR
[V]
10
30