SP6661 High Frequency 200mA Charge Pump Inverter or Doubler ■ Inverts or Doubles Input Supply Voltage 8 V+ FC 1 ■ 92% Power Efficiency at 100mA ■ 120kHz/900kHz Selectable Oscillator FreSP6661 CAP+ 2 7 OSC quency 6 LV ■ 4.5Ω Output Resistance Using 3.3µF Ceramic GND 3 8 Pin nSOIC Caps 5 OUT CAP- 4 ■ Low Voltage Battery Operation ■ Ideal for 3.6V Lithium Ion Battery or 5.0V Input ■ High Output Current – 200mA Now Available in Lead Free Packaging ■ Low Profile Solution ■ 1.5V Inverter Startup Guaranteed ■ Pin-Compatible High-Current Upgrade of the ICL7660 and 660 Industry Standard ■ Smallest Package Available for the 660 Industry Standard – 8 pin µSOIC DESCRIPTION The SP6661 is a CMOS DC-DC Monolithic Voltage Converter that can be implemented as a Voltage Inverter or a Positive Voltage Doubler. As a Voltage Inverter, a -1.5V to -5.0V output can be converted from a +1.5V to +5.0V input. As a Voltage Doubler, a +5.0V to +10.0V output can be provided from a +2.5V to +5.0V input. The SP6661 is ideal for both battery-powered and board level voltage conversion applications with a typical operating current of 3mA and a high efficiency (>90%) over most of its load-current range. Typical end products for this device are disk drive supplies, operational amplifier and interface power supplies, medical instruments, and hand held and laptop computers. The SP6661 is available in 8-pin NSOIC, and µSOIC packages. +VIN +2.5V to +5.0V ® +V 1 FC CAP+ GND 2 +VIN +1.5V to +5.0V 8 SP6661 7 OSC C3 1µF to 22µF C3 1µF to 22µF LV 3 6 4 5 CAP+ CAP- OUT INVERTED NEGATIVE VOLTAGE OUTPUT GND Date: 05/25/04 2 8 SP6661 7 3 6 C1 1µF to 22µF C2 1µF to 22µF Figure 1: Voltage Inverter +V 1 FC C1 1µF to 22µF ® CAP- 4 5 OSC DOUBLE NEGATIVE VOLTAGE OUTPUT C2 1µF to 22µF LV OUT Figure 2: Voltage Doubler SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 1 © Copyright 2004 Sipex Corporation ABSOLUTE MAXIMUM RATINGS These are stress ratings only and functional operation of the device at these ratings or any other above those indicated in the operation sections of the specifications below is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect reliability. OUT and V+ Continuous Output Current.........200mA Output Short-Circuit Duration to GND (Note 1).......1s Operating Temperature Ranges SP6661E_...........................-40˚C to +85˚C Continuous Power Dissipation (TAMB = 70˚C) NSOIC (derate 5.88mW/˚C above +70˚C).......471mW µSOIC (derate 4.10mW/˚C above +70˚C)........330mW Operating Temperature.......................-40˚C to +85˚C Storage Temperature........................-65˚C to +150˚C Lead Temperature (soldering 10s)..................+300˚C Power Supply Voltage (V+ to GND or GND to OUT).............................+5.6V LV Input Voltages............(OUT - 0.3V) to (V+ + 0.3V) FC and OSC Input Voltages......The least negative of (OUT - 0.3V) or (V+ - 5.6V) to (V+ + 0.3V) SPECIFICATIONS PARAMETER MIN. TYP. MAX. UNITS CONDITIONS Inverter Circuit at Low Frequency with 22µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 22µF, FC = open, LV = GND, TAMB = TMIN to TMAX; refer to Figure 1 test circuit. Note 2 Supply Voltage Range 1.5 Start-Up Voltage 5.3 0.93 Supply Current 6 200 Oscillator Input Current Oscillator Frequency 70 Voltage Conversion Efficiency Power Efficiency mA No Load mA ±1 Output Resistance RL = 500Ω V 3 Max Output Current V µA 120 170 kHz 5 7 Ω IL = 100mA, Note 3 99.0 99.9 % No Load 80 70 89 82 % IL = 100mA IL = 200mA Doubler Circuit at Low Frequency with 22µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 22µF, FC = open, LV = GND, TAMB = TMIN to TMAX; refer to Figure 22 test circuit. Note 2 Supply Voltage Range 2.5 Start-Up Voltage 6 mA 200 Oscillator Input Current 70 Output Resistance Voltage Conversion Efficiency No Load mA ±1 Oscillator Frequency RL = 1kΩ V 3 Max Output Current Date: 05/25/04 V 1.5 Supply Current Power Efficiency 5.3 µA 120 170 kHz 4.5 7 Ω IL = 100mA, Note 3 99.0 99.9 % No Load 89 79 94 90 % IL = 100mA IL = 200mA SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 2 © Copyright 2004 Sipex Corporation SPECIFICATIONS (continued) PARAMETER MIN. TYP. MAX. UNITS CONDITIONS Inverter Circuit at High Frequency with 3.3µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 3.3µF, FC = V+, LV = GND, TAMB = TMIN to TMAX; refer to Figure 1 test circuit. Note 2 Supply Voltage Range 1.5 Start-Up Voltage 5.3 0.93 Supply Current 18 200 Oscillator Input Current 500 Output Resistance Voltage Conversion Efficiency Power Efficiency mA No Load mA ±8 Oscillator Frequency RL = 500Ω V 10 Max Output Current V µA 900 1250 kHz 5 7 Ω IL = 100mA, Note 3 99.0 99.6 % No Load 78 65 84 79 % IL = 100mA IL = 200mA Doubler Circuit at High Frequency with 3.3µF Capacitors V+ = +5.0V, C1 = C2 = C3 = 3.3µF, FC = V+, LV = GND, TAMB = TMIN to TMAX; refer to Figure 2 test circuit. Note 2 Supply Voltage Range 2.5 Start-Up Voltage 1.5 Supply Current 10 Max Output Current V 18 mA Oscillator Frequency 500 Voltage Conversion Efficiency No Load mA ±8 Output Resistance RL = 1kΩ V 200 Oscillator Input Current Power Efficiency 5.3 µA 900 1250 kHz 4.5 7 Ω IL = 100mA, Note 3 99.0 99.9 % No Load 87 79 92 89 % IL = 100mA IL = 200mA NOTE 1: Specified output resistance is a combination of internal switch resistance and capacitor ESR. NOTE 2: In the test circuit capacitors C1, C2 and C3 are 22µF, 0.05 maximum ESR, ceramic or 3.3µF, 0.05Ω maximum ESR, ceramic. Capacitors with higher ESR may reduce output voltage and efficiency. Refer to Capacitor Selection section. NOTE 3: Specified output resistance is a combination of internal switch resistance and capacitor ESR. Refer to Optimizing Capacitor Selection. Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 3 © Copyright 2004 Sipex Corporation Total Output Source Resistance Vs C1, C2 Optimizing Capacitor Selection Refer to Figure 1 for the total output resistance for various capacitance values and oscillator frequencies. The reservoir and charge pump capacitor values are equal. The capacitance values required to maintain comparable ripple and output resistance typically diminish proportionately as the pump frequency of the SP6661 increases. 20 18 16 14 10KHz 20KHz 50KHz 100KHz 200KHz 500KHz 1000KHz 12 10 8 6 4 2 0 1 10 100 1000 C1, C2 Capacitance (uF) Figure 1. Total Output Resistance for various capacitance values and oscillator frequencies. Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 4 © Copyright 2004 Sipex Corporation PINOUT FC 1 CAP+ 2 ® SP6661 8 V+ 7 OSC GND 3 6 LV CAP- 4 5 OUT PIN ASSIGNMENTS Pin Number Pin Symbol Description 1 FC 2 CAP+ Connect to the positive terminal of the charge pump capacitor. 3 GND (Voltage Inverter Circuit) Ground. 3 GND (Positive Voltage Doubler Circuit) Positive supply voltage input. 4 CAP- Connect to the negative terminal of the charge pump capacitor. 5 OUT (Voltage Inverter Circuit) Negative voltage output pin. 5 OUT (Positive Voltage Doubler Circuit) Ground pin for power supply. 6 LV Low -voltage operation input pin in 660 circuits. In SP6661 circuits can be connected to GND, OUT or left open as desired with no effect. 7 OSC Control pin for the oscillator. Internally connected to 15pF capacitor. An external capacitor can be added to slow the oscillator. Be careful to minimize stray capacitance. An external oscillator can be connected to overdrive the OSC pin. 8 V+ (Voltage Inverter Circuit) Positive voltage input pin for the power supply. 8 V+ (Positive Voltage Doubler Circuit) Positive voltage output. Date: 05/25/04 Frequency Control for the internal oscillator. FC = open, fosc = 120kHz typical; FC = V+ fosc = 900kHz typical. SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 5 © Copyright 2004 Sipex Corporation All package dimensions in inches 0.189/0.197 0.150/0.157 0.228/0.244 0.0256 BSC 0.053/0.069 12.0˚ ±4˚ 0.012 ±0.003 0.014/0.019 0.0965 ±0.003 0.050 BSC 0˚ - 6˚ 0.006 ±0.006 0.006 ±0.006 R .003 1 0.118 ±0.004 2 0.16 ±0.003 12.0˚ ±4˚ 0.01 0.020 0.020 1 2 0.008 3.0˚ ±3˚ 0.0215 ±0.006 0.037 Ref 2 0.116 ±0.004 0.034 ±0.004 0.116 ±0.004 0.040 ±0.003 0.013 ±0.005 0.118 ±0.004 0.118 ±0.004 0.004 ±0.002 100 die per waffle pack 95 NSOIC devices per tube, no minimum quantity 50 µSOIC devices per tube P W 8-pin NSOIC 13” reels: P = 8mm, W = 12mm Date: 05/25/04 pkg min qty per reel CN CU 500 500 std qty per reel 1500 1500 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 6 max qty per reel 2500 3000 © Copyright 2004 Sipex Corporation ORDERING INFORMATION Part Number Temperature Range Package Type SP6661EN . ............................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC SP6661EN/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin NSOIC SP6661EU . ............................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC SP6661EU/TR ........................................ -40˚C to +85˚C ......................................... 8-Pin µSOIC SP6661UEB ................................................................................... 8-Pin µSOIC Evaluation Board Available in lead free packaging. To order add "-L" suffix to part number. Example: SP6661EN/TR = standard; SP6661EN-L/TR = lead free /TR = Tape and Reel Pack quantity is 2500 for NSOIC. ANALOG EXCELLENCE Sipex Corporation Headquarters: 233 Hillview Dr Milpitas, CA 95035 TEL: (408) 934-7500 FAX: (408) 935-7600 Sipex Corporation reserves the right to make changes to any products described herein. Sipex does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights nor the rights of others. Date: 05/25/04 SP6661 High Frequency 200mA Charge Pump Inverter or Doubler 7 © Copyright 2004 Sipex Corporation