1T409
Variable Capacitance Diode
Description
The 1T409 is a variable capacitance diode
designed for UHF-band VCO using a super-smallminiature flat package (SSVC).
Features
• Super-small-miniature flat package
• Low series resistance: 0.4 Ω Max. (f=470 MHz)
• Large capacitance ratio: 2.5 Typ.
(C2/C10)
• Small leakage current: 3 nA Max. (VR=15 V)
Applications
• UHF-band VCO
• Local oscillator for cordless telephone
• Local oscillator for cellular equipment
M-290
Absolute Maximum Ratings (Ta=25 °C)
• Reverse voltage
VR
15
• Operating temperature Topr
–35 to +85
• Storage temperature
Tstg –65 to +150
V
°C
°C
Structure
Silicon epitaxial planar type diode
Electrical Characteristics
Item
Reverse current
Diode capacitance
Capacitance ratio
Series resistance
(Ta=25 °C)
Symbol
Conditions
IR
C2
C10
C2/C10
rs
VR=15 V
VR=2 V, f=1 MHz
VR=10 V, f=1 MHz
Min.
14.26
5.46
2.2
VR=5V, f=470 MHz
Typ.
2.5
0.3
Max.
Unit
3
15.96
6.46
nA
pF
pF
0.4
Ω
Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by
any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the
operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits.
—1—
E96144A98-TE
1T409
Reverse current vs. Ambient temperature
Diode capacitance vs. Reverse voltage
10
100
Ta=25°C
VR=15V
IR-Reverse current (pA)
C-Diode capacitance (pF)
50
20
10
5
1
2
1
1
2
5
10
20
VR-Reverse voltage (V)
0.1
–20
50
Forward voltage vs. Ambient temperature
35
IF=1mA
VR-Reverse voltage (V)
VF-Forward voltage (V)
80
Reverse voltage vs. Ambient temperature
0.90
0.80
0.70
0.60
–20
0
20
40
60
Ta-Ambient temperature (°C)
0
20
40
60
Ta-Ambient temperature (°C)
80
—2—
IR=10µA
30
25
20
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
1T409
Diode capacitance vs. Ambient temperature
C (Ta)/C (25°C)-Diode capacitance
1.03
VR=1V
1.02
VR=2V
VR=7V
VR=10V
1.01
1.00
0.99
0.98
–20
0
20
40
60
Ta-Ambient temperature (°C)
80
Temperature coefficient of diode capacitance
Reverse current vs. Reverse voltage
1000
Temperature coefficient (ppm/°C)
100
IR-Reverse current (pA)
Ta=80°C
10
Ta=60°C
500
200
100
50
1
1
Ta=25°C
0.1
1
3
10
VR-Reverse voltage (V)
30
—3—
2
5
10
VR-Reverse voltage (V)
20
50
1T409
Package Outline
Unit : mm
0.2 M
A
M -290
0.2 }0.05
10 KM AX
1.7 }0.1
1.3 }0.1
A
0.8 }0.1
c
b
10 KM AX
0.7 }0.1
BASE M ETAL W ITH PLATIN G
c
0.11 }0.005
05
0.11 {0.
|0.01
b
0.3 }0.025
05
0.3 {0.
|0.02
PAC KAG E M ATER IAL
EPO XY R ESIN
LEAD TR EATM EN T
SO LD ER PLATIN G
EIAJ C O D E
LEAD M ATER IAL
C O PPER
JED EC C O D E
PAC KAG E W EIG H T
0.002g
SO N Y C O D E
M -290
Mark
1
S9
2
—4—
1 : Cathode
2 : Anode