1T362 Silicon Variable Capacitance Diode Description The 1T362 is a variable capacitance diode designed for electronic tuning of TV tuners, and the super miniature package allows the tuner miniaturization. Features • Super miniature package • Low series resistance 0.65 Ω Max. (f=470 MHz) • Large capacitance ratio 6.5 Typ. (C2/C25) • Small leakage current 10 nA Max. (VR=28 V) • Maximum capacitance deviation 3% Max. Applications Electronic tuning for TV and CATV Structure Silicon epitaxial planar type diode M-235 Absolute Maximum Ratings (Ta=25 °C) • Reverse voltage VR 30 V • Peak reverse voltage VRM 35 V (RL≥10 kΩ) • Operating temperature Topr 85 °C • Storage temperature Tstg –55 to +150 °C Electrical Characteristics Item Reverse current Diode capacitance Capacitance ratio Series resistance Maximum-capacitance deviation in the same ranking (Ta=25 °C) Symbol IR C2 C25 C2/C25 rs Conditions VR=28 V VR=2 V, f=1 MHz VR=25 V, f=1 MHz f=1 MHz CD=14 pF, f=470 MHz ∆C VR=2 to 25 V, f=1 MHz Min. Typ. 14.01 2.10 15.00 2.27 6.5 0.57 Max. 10 16.33 2.39 Unit nA pF pF 0.65 Ω 3 % Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E89144B83-TE 1T362 Diode capacitance vs. Reverse voltage Ta=25°C f=1MHz CD-Diode capacitance (pF) 20 10 5 2 1 1 2 5 10 20 VR-Reverse voltage (V) Reverse voltage vs. Ambient temperature VR-Reverse voltage (V) IR=10µA 50 40 30 –20 0 20 40 60 Ta-Ambient temperature (°C) —2— 80 1T362 Diode capacitance vs. Ambient temperature Reverse current vs. Ambient temperature f=1MHz 1.03 1000 VR=28V VR=1V VR=2V IR-Reverse current (pA) 100 VR=10V 1.01 VR=25V 1.00 10 1 0.99 0.98 –20 0 20 40 60 80 100 –20 Ta-Ambient temperature (°C) 0 20 40 60 80 Ta-Ambient temperature (°C) Thermal coefficient of diode capacitance Reverse current vs. Reverse voltage 1000 100 Ta=60°C IR-Reverse current (pA) VR=28V Thermal coefficient (ppm/°C) C (Ta) Diode capacitance C (25°C) 1.02 100 Ta=25°C 10 1 10 1 10 1 30 10 VR-Reverse voltage (V) VR-Reverse voltage (V) —3— 100 1T362 Package Outline Unit : mm AA AA M-235 + 0.2 ∗1.25 – 0.1 ∗0.9 ± 0.1 + 0.1 0.3 – 0.05 0.2 2.5 ± 0.2 ∗1.7 ± 0.1 2 1 + 0.1 0.3 – 0.05 0 ± 0.05 + 0.1 0.11 – 0.06 0° to 10° NOTE: Dimension “∗” does not include mold protrusion. SONY CODE M-235 EIAJ CODE JEDEC CODE Marking PACKAGE WEIGHT CATHODE MARK 0.1g 2 62 B 1 —4— Notes 1) B:Lot No.(Year and Month of manufacture) Year;Last one digit Month;A,B,C(for Oct. to Dec.) 1 to 9(for Jan.to Sept.)