CXA1685M High-Speed Transimpedance Amplifier Description CXA1685M is a low noise transimpedance amplifier, particularly suitable for fiber-optic system. CXA1685M is fabricated using high-speed bipolar process. 8 pin SOP (Plastic) Features • High transimpedance: Q 11.2kΩ (Typ.) Q 10.8kΩ (Typ.) • Wide band width (–3dB): Q 177MHz (Typ.) Q 157MHz (Typ.) • Maximum input current: 1mA • Low noise: 1.7pA/√ Hz (Typ.) Absolute Maximum Ratings • Supply voltage VCC – VEE –0.3 to +7.0 V • Minimum input voltage VIN VEE V • Input current IIN –1 to +1 mA • Output current (Q/Q) (Continuous) IO 0 to 50 mA (Surge) 0 to 100 mA • Storage temperature Tstg –65 to +150 °C Applications • SONET/SDH: 155Mb/s • Fiber channel: 133Mb/s • FDDI: 125Mb/s Recommended Operating Conditions • DC power supply voltage VCC – VEE 4.75 to 5.46 V • Operating ambient temperature Ta 0 to +85 °C Structure Bipolar silicon monolithic IC Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E94X22A8Y CXA1685M Block Diagram and Pin Assignment VCC 5 4 VCCA ZT IN 6 3 Q C 7 2 Q 1 VEEDA VEES 8 Electrical Characteristics • DC Electrical Characteristics Item (VCC = VCCA = GND, VEES = VEEDA = –5.46 to –4.75V, Ta = 0 to +85°C) Symbol Supply current IEE Transimpedance Typ. input pin left open –15.3 –10.0 Max. 6.6 11.2 14.8 Q ZTQ 6.2 10.8 14.3 Ta = 25°C IIN2 +40 µA VIN Q VQ Q VQ VCC – 2.4 C VC VEE + 1.7 CIN 1.3 • AC Electrical Characteristics VEE + 2.5 V pF (VCC = VCCA = GND, VEES = VEEDA = –5.46 to –4.75V, Ta = 0 to +85°C) Q f–3dBQ Q f–3dBQ Input Current Noise Spectral Density (Mean value) VEE + 1.7 input pin left open Symbol Item kΩ +1000 IN Input capacitance Unit mA ZTQ Max. Input Current Bandwidth (–3dB) Min. Q Max. Input Current before clipping IIN Bias votlage Test Condition In Test Condition ∗1 fN = 1kHZ to 156MHZ Min. Typ. 113 177 109 157 1.7 ∗1 Assumes photodiode capacitance; CPD < 1.0pF, output load capacitance; Cout = 2.0pF, output load resistor; Q: 620Ω to VEE, Q: 1.3kΩ to VEE –2– Max. Unit. MHZ pA/√ HZ CXA1685M Application Circuit VCC VCC PD 5 ZT 4 VCCA 0.1µF 0.1µF IN C 1.0µF VEES 6 3 7 2 8 1 Q Q Q Q VEEDA 620Ω 1.3kΩ VEE Application circuits shown are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits or for any infringement of third party patent and other right due to same. Cautions for Handling 1. As the electronic breakdown level is weak, take care to handle. 2. The internal resistor of the output pin does not have the capability of drive (RL = 10kΩ). The terminal resistors must be connected. The resistance value is shown in application circuit. –3– CXA1685M Typical Performance Typical frequency characteristics (VCC – VEE = 5.0V, Ta = 25°C) Q Output 5dB/div 0 f–3dB = 177MHz 500M Q Output 1.0G 5dB/div 0 f–3dB = 157MHz 500M 1.0G Typical Output Wave forms (VCC – VEE = 5.0V, Ta = 25°C) 20mV/div VIN = –36dBm, fIN = 80MHz Q Q 65.9000ns 90.9000ns 115.900ns Duty Cycle Distortion vs Input Current fIN = 155Mbps Q Output 55 50 50 Q Output DCD [%] Q Output DCD [%] Q Output 55 45 40 35 30 fIN = 155Mbps 45 40 35 0 200 400 600 800 1000 IIN [µA] 30 0 200 400 600 IIN [µA] –4– 800 1000 CXA1685M f–3dBQ vs Ta 200 190 190 180 180 f–3dB [MHz] f–3dB [MHz] f–3dBQ vs VEE 200 170 160 Ta = –40°C Ta = 25°C Ta = 85°C 150 140 –5.6 –5.4 –5.2 170 160 VCC – VEE = 4.7V VCC – VEE = 5.0V VCC – VEE = 5.5V 150 –5.0 –4.8 140 –50 –4.6 –25 0 VEE [V] 100 f–3dBQ vs Ta © Ta = –40°C Ta = 25°C Ta = 85°C VCC – VEE = 4.7V VCC – VEE = 5.0V VCC – VEE = 5.5V 190 180 f–3dB [MHz] f–3dB [MHz] 75 200 190 170 160 150 180 170 160 150 140 –5.6 –5.4 –5.2 –5.0 –4.8 140 –50 –4.6 –25 0 VEE [V] 25 50 75 100 Ta [°C] VQ vs IIN VQ vs IIN –1 –1 Ta = 85°C Ta = 25°C Ta = –40°C –1.5 –1.5 –2 –2 –2.5 –2.5 VQ [V] VQ [V] 50 Ta [°C] f–3dBQ vs VCC–VEE 200 25 –3 –3 –3.5 –3.5 –4 –4 –4.5 Ta = 85°C Ta = 27°C Ta = –40°C –4.5 0 50 100 150 200 IIN [µA] 0 50 100 IIN [µA] –5– 150 200 CXA1685M IEE vs Ta Ta = 25°C –8.8 –9 –9 –9.2 –9.2 IEE [mA] IEE [mA] IEE vs VEE –8.8 –9.4 –9.6 –9.4 –9.6 –9.8 –9.8 –10 –10 –10.2 –5.6 –5.4 –5.2 –5 –4.8 –10.2 –50 –4.6 –25 0 VEE [V] –3 –3.2 –3.2 –3.4 –3.4 –3.6 –3.6 –3.8 –3.8 –5.2 –5 –4.8 –4 –50 –4.6 –25 0 VEE [V] –1.8 –2 –2 –2.2 –2.2 –2.4 25 50 75 100 –2.6 –2.8 –2.8 –5 –4.8 –4.6 VEE [V] –3 –50 –25 0 25 Ta [°C] –6– VEE = –5.0V –2.4 –2.6 –5.2 100 VEE = –5.0V VQ vs Ta Ta = 25°C VQ [V] VQ [V] VQ vs VEE –5.4 75 Ta [°C] –1.8 –3 –5.6 50 VQ vs Ta Ta = 25°C VQ [V] VQ [V] VQ vs VEE –5.4 25 Ta [°C] –3 –4 –5.6 VEE = –5.0V 50 75 100 CXA1685M Test Circuit (Ta = 25°C, VEE = –5.0V) Spectrum Analyzer/ Oscilloscope VEE VEE 620 Signal Generator ATT –40dB 1µ 51 2p 51 0.1µ 51 100 2p 680p 1.3k 2p VEE VEE VEE Tracking Generator 50 0.1µ VEE –7– 50 CXA1685M Package Outline Unit: mm 8PIN SOP (PLASTIC) + 0.4 1.25 – 0.15 + 0.4 5.0 – 0.1 8 0.10 5 6.4 ± 0.4 + 0.3 4.4 – 0.1 A 4 1 1.27 b 0.24 M + 0.15 0.1 – 0.1 0.5 ± 0.2 B DETAIL B : SOLDER b = 0.4 ± 0.03 + 0.03 0.15 – 0.01 (0.4) (0.15) + 0.1 0.15 – 0.05 0° to 10° + 0.1 b = 0.4 – 0.05 DETAILA DETAIL B : PALLADIUM PACKAGE STRUCTURE SONY CODE SOP-8P-L03 EIAJ CODE SOP008-P-0225 JEDEC CODE PACKAGE MATERIAL EPOXY RESIN LEAD TREATMENT SOLDER/PALLADIUM PLATING LEAD MATERIAL 42/COPPER ALLOY PACKAGE MASS 0.1g NOTE : PALLADIUM PLATING This product uses S-PdPPF (Sony Spec.-Palladium Pre-Plated Lead Frame). –8–