DM-111A Magneto-Resistance Element For the availability of this product, please contact the sales office. Description The DM-111A is a highly sensitive magnetic resistance element, composed of an evaporated ferromagnetic alloy on a silicon substrate. The element can be used for detection of rotational speed and for detection of angle of rotation and as a detection of position. M-102 (Plastic) Features • Low power consumption 38µW (Typ.) at VCC=5V • Low magnetic field and high sensitivity 75mVp-p (Typ.) at VCC=5V and H=4000A/m • High reliability Ensured through silicon nitride protective filming Absolute Maximum Ratings (Ta=25°C) • Supply voltage VCC 10 • Operating temperature Topr –40 to +80 • Storage temperature Tstg –50 to +100 Recommended Operating Condition 5 V °C °C V Electrical Characteristics Item Total resistance (Ta=25°C) Symbol RT Midpoint potential VC Output voltage VO Condition H=4000A/m, θ=45° VCC=5V , H=4000A/m Revoiving magnetic field VCC=5V , H=4000A/m Revoiving magnetic field Min. 500 Typ. 650 Max. 800 Unit kΩ 2.47 2.50 2.53 V 30 75 mVp-p Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E94706A5X-TE DM-111A Equivalent Circuit H θ RA RB 2 1 RB min RA max 3 1 RA : Resistance reduces as the magnetic field revolves. RB : Resistance increases as the magnetic field revolves. 2 3 Introduction 1) Power supplying pin output pin 111A 12 3 1 RA RB 2 VCC 3 2) Sensitive direction vs. Midpoint potential c d b a Midpoint potential a e e Direction of Magneticflux Incidence Sensitive Non-sensitive VCC 2 d b Hs Direction of Magneticflux Incidence H c Useful Region Changes occur to the output voltage at the saturation region of V-H curve according to the direction of magnetic flux. These changes provide for the operation. • With one rotation of magnetic flux, signals for 2 periods are obtained. —2— DM-111A 3) 0° Biasing magnetic field (Switching use) AA Sensitive Biasing Magnet V H Non-sensitive Biasing Magnetic Field Detected Magnetic Field + 1 V 2 Output 3 GND 4) 45° Biasing magnetic field (Analog use) AA Sensitive Biasing Magnet V H Non-sensitive Biasing Magnetic Field Detected Magnetic Field —3— DM-111A Applications 1. Detection of revolution N S S N N S AAAA AAAA 2. Position detecting AAA AAA S N A N S 3. Angular detection of rotating wheel AAAA AAA AAAA AAAA AA AA AAA AAAA S N N S N N S S N 4. Readind out of analog value N AAAA AA AA AAAA Electric current Electric current 5. Position detecting of revolving element AAAA AAAA N AA AA Magnetic conductors —4— DM-111A Circuits 2), 3), 5) Vcc S AA AA N Output r1 1 2 X 3 Moving Direction (X-derection) r2 Differential Amplifier 1), 2), 3), 5) AAAA AA A AA A Moving Direction (X-derection) Vcc Output r1 1 2 3 r2 X Differenntial Amplifier Biasing Magnet Bridge Circuits AA AAA A AAAA (Biasing Magnet) SONY 111A Output SONY 111A By coupling 2 pieces back to back and sticking item together in a bridge, the output voltage is doubled. How to make a Biasing Magnetic Field • Stick a rubber of ferrite biasing magemt • Position an element between the poles of the permanent magnet. Notes on Application • Excute the solder of the lead line within 10 seconds at a temperature below 260°C • To fix the ELEMENTS: When glue is used, DO NOT apply mechanical stress to the elements. • Do not use this element in the dewy condition. —5— DM-111A Example Representative Characteristics Midpoint potential vs. Magnetic field Intensity Midpoint potential vs. Magnetic-flux Incidence 2.55 2.55 VCC=5V Ta=25˚C 2.51 2.53 VC Midpoint potential (V) 111A 2.52 2.49 2.48 2.47 VCC GND 2.50 111A VC Midpoint potential (V) 2.53 2.52 H=4000A/m Ta=25˚C 2.51 2.50 2.49 111A 2.48 2.47 2.46 2.45 0 1.VCC=5V 2. Output 3. GND 2.54 VCC GND 2.54 θ 123 2.46 10000 2.45 20000 0 H-Revoluing magnetic field intensity (Oe) Output voltage vs. Magnetic fiels Intensity 225 45 90 135 180 θ-Direction of magnetic-flux Incidence (deg) Total resistance, output voltage vs. Temperature 100 100 900 90 60 40 20 80 800 RT 70 60 VO 700 50 40 600 H=4000A/m (Revolving magnetic fiels) 30 500 20 10 0 0 10000 400 0 20000 –50 –25 H-Revolving magnetic field intensity (Oe) 0 25 50 75 100 125 150 Ta-Ambient temperature (˚C) —6— RT Total resistance (kΩ) VO Output voltage (mVp-p) 80 Vo Output voltage (mVp-p) VCC=5V Ta=25˚C DM-111A Unit : mm M-102 7.0 ± 0.4 2.0 ± 0.3 0.4 6.3 ± 0.4 1.0 6.0 ± 1.0 1.7 Package Outline 0.5 ± 0.2 1.2 0.25 ± 0.1 2.54 5.08 SONY CODE M-102 EIAJ CODE JEDEC CODE PACKAGE WEIGHT —7— 0.24g