VISHAY BYT400

BYT115/200/400
Vishay Telefunken
Ultra Fast Recovery Silicon Power Rectifier
Features
D
D
D
D
D
D
Multiple diffusion
Epitaxial – planar
Ultra fast forward recovery time
Ultra fast reverse recovery time
Low reverse current
Very good reverse current stability at high temperature
D Low thermal resistance
14282
Applications
Fast rectifiers in S.M.P.S
Freewheeling diodes and snubber diodes in motor
control circuits
Absolute Maximum Ratings
Tj = 25_C
Parameter
Reverse voltage
g
=Repetitive peak reverse voltage
Peak forward surge current
Repetitive peak forward current
Average forward current
Junction and storage
temperature range
Test Conditions
Type
BYT115/200
BYT115/400
tp=10ms
Symbol
VR=VRRM
VR=VRRM
IFSM
IFRM
IFAV
Tj=Tstg
Value
200
400
100
30
15
–55...+150
Unit
V
V
A
A
A
°C
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction case
Junction ambient
Rev. A2, 24-Jun-98
Test Conditions
Symbol
RthJC
RthJA
Value
1.75
85
Unit
K/W
K/W
1 (5)
BYT115/200/400
Vishay Telefunken
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
g
Test Conditions
IF=15A
IF=15A, Tj=100°C
VR=VRRM
VR=VRRM; Tj=100°C
IF=15A, diF/dt 50A/ms
Reverse current
Type
Symbol Min Typ Max
VF
1.3
VF
1.2
IR
2
IR
0.2
tfr
350
VFP
4
x
Forward recovery time
Turn on transient peak
voltage
Reverse recovery
y
characteristics
x
I =15A, di /dtx–150A/ms,
IF=15A, diF/dt –150A/ms,
VBatt=200V
Reverse recovery time
F
IRM
tIRM
trr
F
VBatt=200V
IF=0.5A, IR=1A, iR=0.25A
BYT115/200
BYT115/400
Unit
V
V
mA
mA
ns
V
12
75
140
A
ns
ns
trr
trr
35
50
ns
ns
Characteristics (Tj = 25_C unless otherwise specified)
16
I FAV– Average Forward Current ( A )
I R – Reverse Current ( mA )
1000
100
10
1
VR = 200/400 V
0.1
0
94 9510
40
80
120
160
12
RthJA=5K/W
8
RthJA=10K/W
4
RthJA=85K/W
0
200
Tj – Junction Temperature ( °C )
Figure 1. Typ. Reverse Current vs. Junction Temperature
2 (5)
RthJC=1.75K/W
0
94 9508
40
80
120
160
200
Tamb – Ambient Temperature ( °C )
Figure 2. Max. Average Forward Current vs. Ambient
Temperature
Rev. A2, 24-Jun-98
BYT115/200/400
Vishay Telefunken
20
IRM – Reverse Recovery Current ( A )
IF – Forward Current ( A )
100
10
1
0.1
15
10
5
0
0.01
0
0.6
1.2
1.8
3.0
2.4
VF – Forward Voltage ( V )
94 9509
0
94 9513
1000
200
250
300
350
600
400
dIF/dt=150A/ms
200
200
150
100
50
0
0
0
3
6
9
12
15
21
18
IF – Forward Current ( A )
94 9515
0
94 9512
Figure 4. Reverse Recovery Charge vs.
Forward Current
160
120
80
40
50
100
150
200
250
300
350
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 7. Reverse Recovery Time vs.
Forward Current Rate of Change
Q rr – Reverse Recovery Charge ( nC )
t IRM – Reverse Recovery Time for IRM ( ns )
150
250
800
1200
1000
800
600
400
200
0
0
0
94 9514
100
Figure 6. Reverse Recovery Current vs.
Forward Current Rate of Change
t rr – Reverse Recovery Time ( ns )
Q rr – Reverse Recovery Charge ( nC )
Figure 3. Typ. Forward Current vs. Forward Voltage
50
–dIF/dt – Forward Current Rate of Change ( A/ms )
50
100
150
200
250
300
350
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 5. Reverse Recovery Time for IRM vs.
Forward Current Rate of Change
Rev. A2, 24-Jun-98
0
94 9511
50
100
150
200
250
300
350
–dIF/dt – Forward Current Rate of Change ( A/ms )
Figure 8. Reverse Recovery Charge vs.
Forward Current Rate of Change
3 (5)
BYT115/200/400
Vishay Telefunken
Dimensions in mm
14276
4 (5)
Rev. A2, 24-Jun-98
BYT115/200/400
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems
with respect to their impact on the health and safety of our employees and the public, as well as their impact on
the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known
as ozone depleting substances ( ODSs ).
The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency ( EPA ) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer
application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized
application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out
of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or
unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Rev. A2, 24-Jun-98
5 (5)