BYV12...BYV16 Vishay Telefunken Fast Silicon Mesa Rectifiers Features D D D D Glass passivated junction Hermetically sealed package Soft recovery characteristic Low reverse current Applications 94 9539 Fast rectifier and switch for example for TV–line output circuits and switch mode power supply Absolute Maximum Ratings Tj = 25_C Parameter Reverse voltage g =Repetitive peak reverse voltage Peak forward surge current Test Conditions Type BYV12 BYV13 BYV14 BYV15 BYV16 tp=10ms, half sinewave Repetitive peak forward current Average forward current Junction and storage temperature range ϕ=180°, Tamb=25°C Symbol VR=VRRM VR=VRRM VR=VRRM VR=VRRM VR=VRRM IFSM Value 100 400 600 800 1000 40 Unit V V V V V A IFRM IFAV Tj=Tstg 9 1.5 –65...+175 A A °C Maximum Thermal Resistance Tj = 25_C Parameter Junction ambient Test Conditions l=10mm, TL=constant on PC board with spacing 25mm Symbol RthJA RthJA Value 45 100 Unit K/W K/W Electrical Characteristics Tj = 25_C Parameter Forward voltage Reverse current Reverse recovery time Reverse recovery charge Document Number 86039 Rev. 2, 24-Jun-98 Test Conditions IF=1A VR=VRRM VR=VRRM, Tj=150°C IF=0.5A, IR=1A, iR=0.25A IF=1A, di/dt=5A/ms Type Symbol VF IR IR trr Qrr Min Typ 1 60 Max 1.5 5 150 300 200 Unit V mA mA ns nC www.vishay.de • FaxBack +1-408-970-5600 1 (4) BYV12...BYV16 Vishay Telefunken 240 120 l l T j – Junction Temperature (° C ) R thJA – Therm. Resist. Junction / Ambient ( K/W ) Characteristics (Tj = 25_C unless otherwise specified) 100 80 TL=constant 60 40 20 RthJA=100K/W 200 VR RM 160 BYV12 BYV16 BYV14 80 BYV13 BYV15 40 0 0 0 5 10 15 20 25 1000 0 200 400 600 800 VR,VRRM – Reverse / Repetitive Peak Reverse Voltage ( V ) 30 94 9517 l – Lead Length ( mm ) 94 9101 Figure 1. Typ. Thermal Resistance vs. Lead Length Figure 4. Junction Temperature vs. Reverse/Repetitive Peak Reverse Voltage 1000 1.2 v v VR RM f 20kHz RthJA 100K/W PCB 1.0 0.8 I R – Reverse Current ( mA ) I FAV– Average Forward Current ( A ) VR 120 0.6 0.4 Scattering Limit 100 10 1 0.2 0 VR = VR RM 0.1 0 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) 94 9519 0 Figure 2. Max. Average Forward Current vs. Ambient Temperature 40 80 120 160 200 Tj – Junction Temperature ( °C ) 94 9521 Figure 5. Reverse Current vs. Junction Temperature v v VR RM f 20kHz RthJA 45K/W L=10mm 1.6 IF – Forward Current ( A ) I FAV– Average Forward Current ( A ) 100 2.0 1.2 0.8 Tj = 175°C 1 Tj = 25°C 0.1 0.4 0 0.01 0 94 9518 10 40 80 120 160 200 Tamb – Ambient Temperature ( °C ) Figure 3. Max. Average Forward Current vs. Ambient Temperature www.vishay.de • FaxBack +1-408-970-5600 2 (4) 0 94 9520 1 2 3 4 VF – Forward Voltage ( V ) Figure 6. Max. Forward Current vs. Forward Voltage Document Number 86039 Rev. 2, 24-Jun-98 BYV12...BYV16 Vishay Telefunken CD – Diode Capacitance ( pF ) 12 10 8 6 4 2 f = 470kHz Tj = 25°C 0 0.1 1 100 10 VR – Reverse Voltage ( V ) 94 9523 Z thp – Thermal Resistance for Pulse Cond. (K/W) Figure 7. Typ. Diode Capacitance vs. Reverse Voltage 1000 VR RM= 1000 V RthJA=100K/W 100 Tamb= 25°C Tamb= 45°C Tamb= 60°C 10 Tamb= 70°C 1 10–5 Tamb= 100°C 10–4 10–3 10–2 10–1 100 101 tp – Pulse Length ( s ) 94 9522 100 101 IFRM – Repetitive Peak Forward Current ( A ) Figure 8. Thermal Response Dimensions in mm ∅ 3.6 max. Sintered Glass Case SOD 57 Weight max. 0.5 g 26 min. Document Number 86039 Rev. 2, 24-Jun-98 Cathode Identification 4.2 max. 94 9538 technical drawings according to DIN specifications ∅ 0.82 max. 26 min. www.vishay.de • FaxBack +1-408-970-5600 3 (4) BYV12...BYV16 Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 www.vishay.de • FaxBack +1-408-970-5600 4 (4) Document Number 86039 Rev. 2, 24-Jun-98