SLD104AV GaAlAs Laser Diode Description The SLD104AV is a low noise GaAlAs laser diode developed for CD. M-260 Features • High temperature operation • Low noise • Small package (φ 5.6 mm) Applications • Pickup for CD players Structure • GaAlAs double hetero structured laser diode • Pin photodiode for optical power output monitor Absolute Maximum Ratings (Ta=25 °C) • Optical power output PO 5 mV • Reverse voltage VR LD 2 V PD 15 V • Operating temperature Topr –10 to +60 °C • Storage temperature Tstg –40 to +85 °C Connection Diagram Pin Configuration COMMON 3 2 LD PD 2 1 1 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. —1— E96Y23-TE SLD104AV Optical and Electrical Characteristics Item Threshold current Operating current Operating voltage Oscillation wavelength Monitor current Parallel radiation angle Perpendicular radiation angle Parallel radiation angle symmetry Perpendicular radiation angle accuracy Positional accuracy Differential efficiency Astigmatism Symbol Ith Iop Vop λ Im θ // Conditions (Tc=25 °C) Min. 1.7 760 0.08 9 Typ. 45 52 1.9 780 0.15 18 Max. 60 65 2.5 800 0.4 25 Unit mA mA V nm mA deg 20 35 45 deg PO=3 mW PO=3 mW PO=3 mW PO=3 mW Vr (Pin)=5 V PO=3 mW ∆SR ∗1 PO=3 mW 20 % CW, PO=3 mW ±3 deg ±150 0.7 –20 µm mW/mA µm ⊥ ∆X, ∆Y, ∆Z ηD As 0.2 –34 ID PO=3 mW PO=3 mW fc=720 kHz ∆f=30 kHz PO=4 mW Vr (Pin)=5 V Cr Vr (Pin)=5 V, f=1 MHz S/N PD dark current PD capacitance between pins TC : Case temperature θ⊥ ∆ S/N ratio (TC=25 °C) 88 Power ∗∆ SR ∆ SR = | SL – SR | SL + SR SL SR –7° 0° 7° 0.45 –27 θ || —2— dB 150 nA 30 pF SLD104AV Example of Representative Characteristics Far field pattern (FFP) Threshold current vs. Temperature characteristics 100 1.0 50 45 10 –10 0 25 50 Tc-Case temperature (°C) 100 Relative radiant intensity Ith-Threshold current (mA) PO=3mW 0.5 θ⊥ θ // 0 PIN diode voltage current characteristics 0.25 (mA) –40 –20 0 20 Angle (degree) 40 Optical power output vs. Forward current characteristics 5 I Tc=25°C Tc=25°C PO=3mW Tc=50°C –1.0 0 1.0 (V) PO-Optical power output 4 V 3 2 1 –0.25 0 40 60 80 IF-Forward current (mA) 100 Relative radiant intensity vs. Wavelength characteristics PO=5mW Relative radiant intensity Relative radiant intensity Relative radiant intensity vs. Wavelength characteristics PO=3mW 20 778 779 780 781 λ-Wavelength (nm) 782 780 —3— 781 782 783 λ-Wavelength (nm) 784 SLD104AV Unit : mm M-260 Reference Slot 0.4 1.0 0.5 90° 3 2 1 0 φ5.6 – 0.05 φ4.4 MAX ∗1.26 1.2 ± 0.1 Reference Plane 2.6 MAX 0.5 MIN φ3.7 MAX 0.25 2 3 1 6.5 Package Outline LD Chip & Photo Diode 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.15 SONY CODE PCD φ2.0 M-260 EIAJ CODE JEDEC CODE PACKAGE WEIGHT —4— 0.3g