SLD104AU AlGaAs Laser Diode Description The SLD104AU is a AlGaAs laser diode developed for positive power supplies. In comparison with the SLD104U, this device attains even lower power consumption levels. Features • Low power consumption • Single power supply • Low noise • Microminiaturized package (φ5.6mm) Structure • AlGaAs double hetero-type laser diode • PIN photo diode for laser optical power output monitor Absolute Maximum Ratings (Tc = 25°C) • Optical power output Po 5 mW • Reverse voltage VR LD 2 V PD 15 V • Operating temperature Topr –10 to +60 °C • Storage temperature Tstg –40 to +85 °C Connection Diagram 3 Pin Configuration COMMON PD 2 LD 2 1 1 3 1. LD anode 2. PD anode 3. COMMON Bottom View Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits. –1– E89418B81-PS SLD104AU Electrical and Optical Characteristics (Tc = 25°C) Item Symbol Tc: Case temperature Condition Min. Typ. Max. Unit 45 60 mA 52 70 mA Threshold current Ith Operating current Iop PO = 3mW Operating voltage Vop PO = 3mW 1.7 1.9 2.5 V Wavelength λ PO = 3mW 760 780 800 nm Monitor current Im PO = 3mW, VR = 5V 0.08 0.15 0.4 mA 20 32 45 degree 9 17 25 degree 20 % ±150 µm ±3 degree 0.7 mW/mA 15 µm Perpendicular θ⊥ Radiation angle Parallel θ// (F. W. H. M.∗) Asymmetry ∆SR ∗1 Positional accuracy Position ∆X, ∆Y, ∆Z Angle ∆φ⊥ PO = 3mW PO = 3mW Differential efficiency ηD PO = 3mW Astigmatism AS PO = 3mW | Z// – Z⊥ | Signal to noise ratio S/N fC = 7.5MHz ∆f = 30kHz PO = 4mW Dark current of PD ID VR = 5V 150 nA Capacitance of PD CT VR = 5V, f = 1MHz 30 pF 0.2 Power ∆SR = SL SR –7° 0 7° θ// –2– dB 88 ∗ F. W. H. M. : Full Width at Half Maximum ∗1 0.45 | SL – SR | SL + SR SLD104AU Example of Representative Characteristics Temperature characteristic of threshold current Far field pattern (FFP) 1.0 PO = 3mW Radiant intensity (optional scale) Ith – Threshold current [mA] 100 50 45 10 –10 0 25 50 100 TC – Case temperature [°C] 0.5 θ⊥ θ// 0 –40 –20 0 20 40 Angle [degree] PIN diode current-voltage characteristics Optical power output vs. Forward current characteristics 0.25 [mA] I 5 V –1.0 1.0 [V] 0 PO – Optical power output [mW] Tc = 25°C PO = 3mW –0.25 4 Tc = 25°C Tc = 50°C 3 2 1 0 20 40 60 80 100 IF – Forward current [mA] Relative light intensity vs. Waveform characteristics Relative light intensity vs. Wavelength characteristics Relative light intensity PO = 5mW Relative light intensity PO = 3mW 778 779 780 781 782 780 λ – Wavelength [nm] 781 782 783 λ – Wavelength [nm] –3– 784 SLD104AU Package Outline Unit: mm M-259 Reference Slot 0.4 1.0 0.5 90° 3 Window Glass φ0.8 2 1 0 φ5.6 – 0.05 φ4.4 MAX 0.5 MIN φ3.8 MAX ∗1.26 5 2 3 1 6.5 LD Chip & Photo Diode 30° 0.2 Reference Plane 1.2 ± 0.1 3.1 MAX 0.6 3 – φ0.45 ∗Optical Distance = 1.35 ± 0.15 SONY CODE PCD φ2.0 M-259 EIAJ CODE JEDEC CODE PACKAGE WEIGHT –4– 0.3g