CHM1291 25-32GHz Single Side Band Mixer GaAs Monolithic Microwave IC Description The CHM1291 is a multifunction chip (MFC) which integrates a LO buffer amplifier and a subharmonically balanced diodes mixer for 2LO suppression and image rejection. It is usable both for up-conversion and down-conversion. It is designed for a wide range of applications, typically commercial communication systems for broadband local access (LMDS). The backside of the chip is both RF and DC grounded. This helps simplify the assembly process. The circuit is manufactured with a PM-HEMT process, 0.25µm gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is available in chip form. Main Features • • • • • • • Broadband performances : 25-32GHz 11dB conversion Loss 15dBc image rejection +5dBm LO input power +5dBm input power (1dB gain comp.) Low DC power consumption, [email protected] Chip size : 2.06 x 1.25 x 0.10 mm Main Characteristics Tamb. = 25°C Parameter Min Typ Max Unit FRF RF frequency range 25 32 GHz FLO LO frequency range 12 15.5 GHz FIF IF frequency range 0.1 3 GHz Lc Conversion Loss 15 dB 11 ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions ! Ref. : DSCHM12912266 - 23-Sept.-02 1/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 25-32GHz SSB Mixer CHM1291 Electrical Characteristics for Broadband Operation Tamb = +25°C, Vd = 3.5V Id=55mA Symbol Parameter Min Typ Max Unit FRF RF frequency range 25 32 GHz FLO LO frequency range 12 15.5 GHz FIF IF frequency range 0.1 3 GHz Lc Conversion Loss 11 15 dB LO Input power +5 PLO 2xLO Leak 2xLO Leakage (for PLO=+5dBm) Img Rej -35 dBm -30 dBm Image Rejection (1) 10 15 dBc P1dB Input power at 1dB gain compression -2 +1 dBm P03 Input power at 3dB gain compression +3 dBm IP3 Input 3 order intercept point +9 dBm rd LO Match LO VSWR 2.0:1 RF Match RF VSWR 2.0:1 IF Match IF VSWR 2.0:1 Sz Chip size 2.6 mm² Id Bias current 55 mA (1) With external quadrature hybrid coupler (reference on request). The minimal value depends on the quality of the external quadrature combiner. Current source biasing network is recommended. A bonding wire of typically 0.1 to 0.15 nH will improve the accesses matching. Absolute Maximum Ratings Tamb. = 25°C (1) Symbol Parameter Values Unit Vd Drain bias voltage 4.0 V Id Drain bias current 100 mA Ta Operating temperature range -40 to +85 °C Storage temperature range -55 to +155 °C Tstg (1) Operation of this device above anyone of these parameters may cause permanent damage. (2) Duration < 1s. Ref. : DSCHM12912266 - 23-Sept.-02 2/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 25-32GHz SSB Mixer CHM1291 Typical On-wafer Measurements in Up-Conversion mode with external IF quadrature combiner Up-Conversion infradyne mode with external combiner P LO = +5dBm F LO = 14GHz Up-Conversion supradyne mode with external combiner P LO = +5dBm F LO = 14GHz 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -44 CL sup ( dB ) CL inf ( dB ) Img Supp ( dBc ) P LO @ RF ( dBm ) Conv. Loss (dB), LO & 2xLO leakage (dBm) Conv. Loss (dB), LO & 2xLO leakage (dBm) Bias conditions: Tamb = +25°C, Vd = 3.5V, Id = 55mA P 2xLO @ RF ( dBm ) 1,5 1,7 1,9 2,1 2,3 32 28 24 20 16 12 8 4 0 -4 -8 -12 -16 -20 -24 -28 -32 -36 -40 -44 CL inf ( dB ) Img Supp ( dBc ) P LO @ RF ( dBm ) P 2xLO @ RF ( dBm ) 1,5 2,5 CL sup ( dB ) 1,7 1,9 CL sup ( dB ) Img Supp (dBc) P 2xLO @ RF ( dBm ) 12 12,5 13 Conv. Loss (dB), LO & 2xLO leakage (dBm) Conv. Loss (dB), LO & 2xLO leakage (dBm) Up-Conversion supradyne mode with external combiner P LO = +5dBm F IF = 2,0GHz 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -34 -38 -42 -46 -50 -54 CL inf ( dB ) P LO @ RF ( dBm ) 13,5 14 14,5 LO Frequency (GHz) 15 15,5 2,1 2,3 2,5 IF Frequency (GHz) IF Frequency (GHz) Up-Conversion infradyne mode with external combiner P LO = +5dBm F IF = 2,0GHz 30 26 22 18 14 10 6 2 -2 -6 -10 -14 -18 -22 -26 -30 -34 -38 -42 -46 -50 -54 CL sup ( dB ) Img Supp (dBc) P 2xLO @ RF ( dBm ) 12 16 12,5 13 CL inf ( dB ) P LO @ RF ( dBm ) 13,5 14 14,5 LO Frequency (GHz) 15 15,5 Typical On-wafer Compression Measurements in Up-Conversion mode with external IF quadrature combiner Bias conditions: Tamb = +25°C, Vd = 3.5V, Id = 55mA Up-Conversion Sup. mode with external combiner LO = 14GHz P LO = +5dBm F IF = 2,0GHz (RF = 30GHz) -2 -6 Output power & Conv. Loss (dBm & dB) Output power & Conv. Loss (dBm & dB) -4 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 P RF 30GHz CL 30GHz -28 -30 -20 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 Up-Conversion Inf. mode with external combiner LO = 14GHz P LO = +5dBm F IF = 2,0GHz (RF = 26GHz) -2 -4 4 6 -6 -8 -10 -12 -14 -16 -18 -20 -22 -24 -26 -28 -30 P RF 26GHz -20 IF Input power (dBm) Ref. : DSCHM12912266 - 23-Sept.-02 3/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 -18 -16 -14 -12 -10 -8 -6 CG 26GHz -4 -2 0 2 4 6 IF Input power (dBm) Specifications subject to change without notice 16 25-32GHz SSB Mixer CHM1291 Typical On-wafer Measurements in Down-Conversion mode with external IF quadrature combiner Bias conditions: Tamb = +25°C, Vd = 3.5V, Id = 55mA -6 -8 -8 -10 -10 -12 -12 Conversion Loss (dB) Conversion Loss (dB) Down-Conversion mode with external combiner P LO = +5dBm F LO = 14GHz Down-Conversion mode with external combiner P LO = +5dBm F LO = 12GHz -6 -14 -16 -18 CL I Sup ( dB ) CL I Inf ( dB ) -20 CL Q Sup ( dB ) CL Q Inf ( dB ) -22 F LO -24 -26 -14 -16 CL I Sup ( dB ) CL I Inf ( dB ) -18 CL Q Sup ( dB ) CL Q Inf ( dB ) -20 F LO -22 -24 -26 -28 -28 -30 -30 -32 -32 -34 -34 25,5 21,5 22,0 22,5 23,0 23,5 24,0 24,5 25,0 25,5 26,0 26,0 26,5 27,0 26,5 Down-Conversion mode with external combiner P LO = +5dBm F LO = 16GHz -6 Conv. Loss (dB), LO & 2xLO leakage (dBm) -8 -10 Conversion Loss (dB) -12 -14 -16 CL I Sup ( dB ) CL I Inf ( dB ) -18 CL Q Sup ( dB ) CL Q Inf ( dB ) -20 F LO -22 -24 -26 -28 -30 -32 30,5 31,0 31,5 32,0 32,5 33,0 33,5 34,0 28,5 29,0 29,5 30,0 30,5 -18 -22 -26 -30 -34 -38 -42 -46 -50 -54 CL I Sup ( dB ) CL Q Sup ( dB ) P LO @ RF ( dBm ) 12 30,0 28,0 Down-Conversion mode with external combiner P LO = +5dBm F IF = 2,0GHz -6 -10 -14 -34 29,5 27,5 RF Frequency (GHz) RF Frequency (GHz) 12,5 13 34,5 CL I Inf ( dB ) CL Q Inf ( dB ) P 2xLO ( dBm ) 13,5 14 14,5 LO Frequency (GHz) 15 15,5 16 RF Frequency (GHz) Typical On-wafer Measurements in Down-Conversion mode without external IF quadrature combiner Bias conditions: Tamb = +25°C, Vd = 3.5V, Id = 55mA Down-Conversion Inf. mode without external combiner F LO = 15GHz P LO = +5dBm F RF = 23 to 29GHz -10 -14 -14 -18 -18 Conv. Loss (dB) LO & 2LO leakage (dBm) Conv. Loss (dB) LO & 2LO leakage (dBm) Down-Conversion Sup. mode without external combiner F LO = 13GHz P LO = +5dBm F RF = 26 to 33GHz -10 -22 -26 -30 -34 CL I Sup ( dB ) CL Q Sup ( dB ) P LO @ IF ( dBm ) P 2XLO @ IF ( dBm ) -38 -42 -46 -22 -26 -30 -34 -38 -42 CL I Inf ( dB ) CL Q Inf ( dB ) -46 P LO @ IF ( dBm ) P 2XLO @ IF ( dBm ) -50 -50 -54 -54 -58 -58 0 1 2 3 4 5 6 7 0 IF Frequency (GHz) Ref. : DSCHM12912266 - 23-Sept.-02 1 2 3 4 5 6 IF Frequency (GHz) 4/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice 7 25-32GHz SSB Mixer CHM1291 Chip Assembly and Mechanical Data Note : Supply feed should be capacitively bypassed. 25µm diameter gold wire is recommended Bonding pad positions ( Chip thickness : 100µm. All dimensions are in micrometers ) Ref. : DSCHM12912266 - 23-Sept.-02 5/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice CHM1291 Ordering Information Chip form : CHM1291-99F/00 Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use as critical components in life support devices or systems without express written approval from United Monolithic Semiconductors S.A.S. Ref. : DSCHM12912266 - 23-Sept.-02 6/6 Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09 Specifications subject to change without notice