UMS CHM2378

CHM2378a
W-band Dual Channel Mixer
GaAs Monolithic Microwave IC
Description
RF1
The CHM2378 is a dual channel mixer.
Each mixer cell is a balanced structure
based on a six quarter wave ring. The nonlinear devices are high quality Schottky
diodes providing low conversion loss and
very low 1/f noise.
This circuit is manufactured with the BESMMIC process: 1 µm Schottky diode
device, air bridges, via holes through the
substrate, stepper lithography.
It is available in chip form.
LO
RF2
IF2
IF1
Dual channel mixer block diagram
-5
-6
-7
n
n
n
n
n
n
n
n
n
Conversion gain (dB)
Main Features
W-band LO and RF frequency range
Low conversion loss
IF from DC to 100MHz
High LO/RF isolation
High LO/AM noise rejection
Very low 1/f noise
Low LO input power
Automatic assembly oriented
Chip size: 1.98 x 2.07 x 0.10 mm
-8
-9
-10
-11
-12
-13
-14
-15
75
75,5
76
76,5
77
77,5
LO frequency (GHz)
Typical conversion characteristic
LO power = 8dBm ; IF=10MHz
(measurement in test fixture)
Main Characteristics
Tamb. = 25°C
Symbol
F_lo, F_rf
F_if
Parameter
LO,RF frequency
IF frequency range
Min
Typ
Max
Unit
76
76.5
77
GHz
DC-100
MHz
Lc
Conversion loss
7.5
I_lo/rf
LO/RF isolation
25
dB
-162
dBm/Hz
N_if
IF noise @ 100kHz
9.5
dB
ESD Protection : Electrostatic discharge sensitive device. Observe handling precautions !
Ref. : DSCHM23781269 -26-Sep.-01
1/8
Specifications subject to change without notice
United Monolithic Semiconductors S.A.S.
Route Départementale 128 - B.P.46 - 91401 Orsay Cedex France
Tel. : +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
78
W-band Dual Channel Mixer
CHM2378a
Electrical Characteristics
Full operating temperature range, used according to section “Typical assembly and bias
configuration”
Symbol
F_lo, F_rf
F_if
Lc
Parameter
Min
LO,RF frequency
Typ
76
IF frequency range
Unit
77
GHz
DC-100
Conversion loss
4.5
MHz
7.5
|(d(∆Lc)/dT)* ∆T| Conversion loss difference from
chip to chip versus temperature
P_lo
Max
9.5
dB
0.3
dB
(to be confirmed)
LO input power
4
7
P_RF_1dB
RF input power at 1 dB
-3
0
VSWR_lo
LO port VSWR (50Ω)
2:1
2.5:1
VSWR_rf
RF port VSWR (50Ω)
2:1
2.5:1
IMP_if
IF load impedance (1)
200
Ω
I_lo/rf
LO/RF isolation
20
25
dB
I_rf1/rf2
Isolation between RF channels
25
30
dB
I_rfi/rfj
Isolation between RF and IF
channels
25
30
dB
R_lo_am
LO AM noise rejection (SSB)
25
30
dB
NF
Noise figure for IF=1kHz (2)
34
39
dB
Noise figure for IF=10kHz (2)
28
33
dB
Noise figure for IF=100kHz (2)
20.5
25.5
dB
Noise figure for IF=200kHz (2)
17
22
dB
+V
Positive supply voltage (3)
4.5
+I
Positive supply current (3)
1.5
Top
Operating temperature range
-40
11
dBm
dBm
V
2.5
mA
+100
°C
(1) The IF optimum load for conversion loss is 200Ω. For minimum noise figure this load can be lower,
the best results have been obtained on 50Ω.
(2) Measured on 200Ω IF impedance.
(3) An external resistor controls the bias current (see section “Typical Assembly and Bias
Configuration”)
Ref. DSCHM23781269 -26-Sep.-01
2/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Dual Channel Mixer
CHM2378a
Absolute Maximum Ratings (1)
Symbol
Parameter
Values
Unit
6
V
+V
Supply voltage
+I
Supply current (for one input)
2.5
mA
Maximum peak input power overdrive at LO port (2)
12
dBm
Maximum input power at RF port (3)
3
dBm
-55 to +125
°C
P_lo
P_rf_cw
Tstg
Storage temperature range
(1) Operation of this device above anyone of these parameters may cause permanent damage.
(2) Duration < 1s
(3) Continuous wave mode.
Ref. DSCHM23781269 -26-Sep.-01
3/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Dual Channel Mixer
CHM2378a
Chip Mechanical Data and Pin References
4
5
6
7
8
9
10
11
3
2
1
12
13
14
19 18 17 16 15
Unit = µm
External chip size (including dicing streets) = 1980 x 2070 ± 35
Chip thickness = 100 +/- 10
HF Pads (2,10,13) = 68 x 118
DC/IF Pads = 100 x 100
Pin number
Pin name
Description
LO
+V1
C1
IF1
RF1
RF2
IF2
C2
+V2
Ground : should not be bonded. If required,
please ask for more information.
Ground (optional)
Not Connected
LO input
Positive supply voltage 1
Bias 1 decoupling
First IF output
First RF input
Second RF input
Second IF output
Bias 2 decoupling
Positive supply voltage 2
1,3,9,11,12,14
6,17
7,16
2
4
5
8
10
13
15
18
19
Ref. DSCHM23781269 -26-Sep.-01
4/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Dual Channel Mixer
CHM2378a
External components for bias and IF
Several external configurations are possible for bias and IF. The objective is to give flexibility
for the integration.
As this component is mainly dedicated to low IF use, there are several possibilities for
interfacing with low noise IF amplifier. The optimum IF load for conversion loss is 200Ω,
however the best results on noise figure have been obtained on 50Ω. Depending on the IF
amplifier noise characteristic this load can be modified in order to optimise the noise figure..
A series capacitor, between IF output and the load is recommended.
Due to high sensitivity to electrical discharges an integrated resistance is used and two ports
are available for biasing each mixer. One is for the connection of a decoupling capacitor (C1,
C2) and the other one is for the supply voltage connection through an external series
resistance (+V1, +V2). However, if necessary only the “C1, C2” ports can be used.
+V
C1
V1
IF1
C1
1k
R_bias
V1
R_load_IF
C_IF
IF1
1k
RF1
RF1
LO
LO
RF2
RF2
1k
1k
C2
C2
V2
IF2
V2
R_bias
+V
Block diagram of the MMIC
IF2
C_IF
R_load_IF
Recommended IF/DC external configuration
The recommended values for external components are:
C1,C2
R_bias_t
R_bias_t*C >> 1/F_if
2.5kΩ for 1.5mA current consumption (V = 4.5V, typical LO
power)
From 50 to 200Ω
R_load_if
Notes::
1. R_bias_t = R_bias + 1kΩ when V1 and V2 ports are used.
2. R_bias_t can be adjusted if necessary; This allows to optimise the performances when some
parameters are different from recommended (Supply voltage, LO power …). However
maximum ratings for the current have to be taken into account.
3. A series capacitor at IF outputs is recommended for DC decoupling.
Ref. DSCHM23781269 -26-Sep.-01
5/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Dual Channel Mixer
CHM2378a
Typical Assembly Configuration
+V
120pF
IF1
C1
R_bias
µ-strip line
L_rf1
µ-strip line
µ-strip line
L_lo
L_rf2
R_bias
C2
120pF
+V
IF2
This drawing shows an example of assembly configuration. The bias and IF interconnections are according to the example given in the previous chapter.
For the RF pads the equivalent wire bonding inductance (diameter=25µm) have
to be according to the following recommendation.
Port
LO (2)
RF1 (10)
RF2 (13)
Equivalent inductance
(nH)
L_lo= 0.26
L_rf1 = 0.26
L_rf2 = 0.26
Approximative wire
length (mm)
0.33
0.33
0.33
For a micro-strip configuration a hole in the substrate is recommended for chip
assembly.
As the connections at 77GHz (between MMIC and MMIC or between MMIC and
external substrate) are critical, the transition matching network is split into two
parts: one on MMIC and one on the external substrate. This choice allows to do
both kind of connections.
Ref. DSCHM23781269 -26-Sep.-01
6/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Dual Channel Mixer
CHM2378a
0.42
In the case of connection from MMIC to an external substrate a network is
proposed on soft substrate for LO, RF1 and RF2 ports. The following drawings
give the dimensions (in mm) for a DUROID substrate (thickness=0.127mm,
εr=2.2).
0.25
0.15
= Bonding area
0.94
0.2
0.325
Proposed matching network for a 50Ω transition between LO and a µ-strip
line on DUROID substrate
0.2
0.73
= Bonding area
Proposed matching network for a 50Ω transition between RF1/RF2 and µstrip lines on DUROID substrate.
Ref. DSCHM23781269 -26-Sep.-01
7/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice
W-band Dual Channel Mixer
CHM2378a
Ordering Information
Chip form
:
CHM2378-99F/00
Information furnished is believed to be accurate and reliable. However United Monolithic Semiconductors
S.A.S. assumes no responsibility for the consequences of use of such information nor for any infringement of
patents or other rights of third parties which may result from its use. No license is granted by implication or
otherwise under any patent or patent rights of United Monolithic Semiconductors S.A.S.. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. United Monolithic Semiconductors S.A.S. products are not authorised for use
as critical components in life support devices or systems without express written approval from United
Monolithic Semiconductors S.A.S.
Ref. DSCHM23781269 -26-Sep.-01
8/8
Route Départementale 128 , B.P.46 - 91401 ORSAY Cedex - FRANCE
Tel.: +33 (0)1 69 33 03 08 - Fax : +33 (0)1 69 33 03 09
Specifications subject to change without notice